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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF840LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf840lcpbf-datasheets-8729.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 500V | 4V | 125W Tc | 740 ns | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SQM40031EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm40031elge3-datasheets-8739.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 21 ns | 250 ns | -120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 375W Tc | 300A | 0.003Ohm | -40V | P-Channel | 39000pF @ 25V | 3m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 800nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830pbf-datasheets-8583.pdf | 500V | 4.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | Tin | No | 1 | Single | 74W | 1 | TO-220AB | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 4V | 74W Tc | 640 ns | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 4 V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| VP0104N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/microchiptechnology-vp0104n3g-datasheets-8615.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 4 ns | 3ns | 4 ns | 8 ns | 250mA | 20V | SILICON | SWITCHING | 40V | 1W Tc | 0.25A | 8Ohm | 8 pF | -40V | P-Channel | 60pF @ 25V | 8 Ω @ 500mA, 10V | 3.5V @ 1mA | 250mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF16N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf3n40-datasheets-4758.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 50W Tc | 9.5A | 38A | 0.23Ohm | 560 mJ | N-Channel | 1.2pF @ 25V | 230m Ω @ 4.75A, 10V | 5V @ 250μA | 9.5A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1404STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1404lpbf-datasheets-0994.pdf | 40V | 162A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 4MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 17 ns | 140ns | 26 ns | 72 ns | 162A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 200W Tc | 75A | 650A | 40V | N-Channel | 7360pF @ 25V | 4m Ω @ 95A, 10V | 4V @ 250μA | 162A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF3710PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3710pbf-datasheets-8635.pdf | 100V | 57A | TO-220-3 | 10.54mm | 19.8mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 23MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | 1 | Single | 200W | 1 | FET General Purpose Power | 175°C | 12 ns | 58ns | 47 ns | 45 ns | 57A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 220 ns | 280 mJ | 100V | N-Channel | 3130pF @ 25V | 4 V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NP40N055KLE-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np40n055klee1ay-datasheets-8644.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | 55V | 1.8W Ta 66W Tc | N-Channel | 1.95pF @ 25V | 23mOhm @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 41nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSJ250P10TL | ROHM Semiconductor | $12.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 83 | EAR99 | No | SINGLE | GULL WING | 3 | 1 | 1 | R-PSSO-G2 | 30 ns | 67ns | 180 ns | 310 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 50W Tc | 50A | 0.063Ohm | -100V | P-Channel | 8000pF @ 25V | 63m Ω @ 25A, 10V | 2.5V @ 1mA | 25A Ta | 60nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9520NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf9520npbf-datasheets-8665.pdf | -100V | -6.8A | TO-220-3 | 10.54mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 480mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | 48W | 250 | Single | 30 | 48W | 1 | Other Transistors | 14 ns | 47ns | 31 ns | 28 ns | -6.8A | 20V | -100V | DRAIN | SWITCHING | 100V | -4V | TO-220AB | 150 ns | 27A | -100V | P-Channel | 350pF @ 25V | -4 V | 480m Ω @ 4A, 10V | 4V @ 250μA | 6.8A Tc | 27nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| STF100N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf100n6f7-datasheets-8671.pdf | TO-220-3 Full Pack | Lead Free | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF100N | NOT SPECIFIED | 46A | 60V | 25W Tc | N-Channel | 1980pF @ 25V | 5.6m Ω @ 23A, 10V | 4V @ 250μA | 46A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD042P03L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd042p03l3gatma1-datasheets-8185.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | No SVHC | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | SINGLE | GULL WING | 1 | R-PSSO-G2 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -1.5V | 150W Tc | 280A | 0.0068Ohm | 269 mJ | P-Channel | 12400pF @ 15V | 4.2m Ω @ 70A, 10V | 2V @ 270μA | 70A Tc | 175nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS38N20DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfb38n20dpbf-datasheets-2918.pdf | 200V | 38A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 54mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 320W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 95ns | 47 ns | 29 ns | 44A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5V | 3.8W Ta 300W Tc | 240 ns | 460 mJ | 200V | N-Channel | 2900pF @ 25V | 5 V | 54m Ω @ 26A, 10V | 5V @ 250μA | 43A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| ZVN4306A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zvn4306a-datasheets-8702.pdf | 60V | 1.1A | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 330mOhm | 3 | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 850mW | 1 | FET General Purpose Powers | Not Qualified | 8 ns | 25ns | 25 ns | 30 ns | 1.1A | 20V | SILICON | SWITCHING | 3V | 850mW Ta | 60V | N-Channel | 350pF @ 25V | 330m Ω @ 3A, 10V | 3V @ 1mA | 1.1A Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQA28N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa28n15-datasheets-8713.pdf | 150V | 33A | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 90MOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 227W | 1 | FET General Purpose Power | 17 ns | 180ns | 115 ns | 100 ns | 33A | 25V | SILICON | SWITCHING | 4V | 227W Tc | 150V | N-Channel | 1600pF @ 25V | 90m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 52nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| IRL530PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irl530pbf-datasheets-8562.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 160mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 15A | 10V | 100V | 2V | 88W Tc | 160mOhm | 100V | N-Channel | 930pF @ 25V | 1 V | 160mOhm @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB067N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb067n08n3gatma1-datasheets-8491.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 136W Tc | 80A | 320A | 0.0067Ohm | 150 mJ | N-Channel | 3840pF @ 40V | 6.7m Ω @ 73A, 10V | 3.5V @ 73μA | 80A Tc | 56nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | 100V | 36A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 26.5Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 92W | 1 | FET General Purpose Power | 1.3V | 15 ns | 51ns | 39 ns | 43 ns | 36A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 92W Tc | TO-220AB | 50 ns | 100V | N-Channel | 1770pF @ 25V | 4 V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP120N06S402AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n06s402aksa1-datasheets-8144.pdf | TO-220-3 | PG-TO220-3-1 | 60V | 188W Tc | N-Channel | 15.75pF @ 25V | 2.8mOhm @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR610DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir610dpt1re3-datasheets-8328.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 150°C | 9 ns | 20 ns | 8.6A | 20V | 104W Tc | 200V | N-Channel | 1380pF @ 100V | 31.9m Ω @ 10A, 10V | 4V @ 250μA | 35.4A Tc | 38nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR846DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir846dpt1ge3-datasheets-8430.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 18ns | 20 ns | 36 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 6.25W Ta 104W Tc | 20A | 100V | N-Channel | 2870pF @ 50V | 3.5 V | 7.8m Ω @ 20A, 10V | 3.5V @ 250μA | 60A Tc | 72nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFZ34NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | 55V | 29A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 40mOhm | 3 | 2.54mm | EAR99 | Tin | No | 1 | Single | 56W | 1 | FET General Purpose Power | 175°C | 7 ns | 49ns | 40 ns | 31 ns | 29A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 68W Tc | TO-220AB | 86 ns | 65 mJ | 55V | N-Channel | 700pF @ 25V | 4 V | 40m Ω @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDMC86102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc86102-datasheets-8261.pdf | 8-PowerTDFN | 3.4mm | 950μm | 3.4mm | Lead Free | 5 | 40 Weeks | 32.13mg | No SVHC | 24MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e4 | Nickel/Palladium (Ni/Pd) | DUAL | Single | 2.3W | 1 | FET General Purpose Power | S-PDSO-N5 | 8 ns | 4ns | 4 ns | 14 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.1V | 2.3W Ta 41W Tc | MO-240BA | 7A | 30A | 72 mJ | 100V | N-Channel | 965pF @ 50V | 3.1 V | 24m Ω @ 7A, 10V | 4V @ 250μA | 7A Ta 20A Tc | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHG47N60AE-GE3 | Vishay Siliconix | $6.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aege3-datasheets-8468.pdf | TO-247-3 | 18 Weeks | 600V | 313W Tc | N-Channel | 3600pF @ 100V | 65m Ω @ 24A, 10V | 4V @ 250μA | 43A Tc | 182nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD100N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp100n10f7-datasheets-1960.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 3 | No SVHC | 8MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 8541.29.00.95 | THROUGH-HOLE | STD10 | Single | 120W | 1 | FET General Purpose Powers | 27 ns | 46 ns | 80A | 20V | SILICON | ISOLATED | SWITCHING | 4.5V | 120W Tc | TO-220AB | 400 mJ | 100V | N-Channel | 4369pF @ 50V | 8m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1018EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf1018estrlpbf-datasheets-8372.pdf | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 8.4MOhm | 3 | EAR99 | Tin | No | Single | 110W | 1 | FET General Purpose Power | 13 ns | 35ns | 46 ns | 55 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-220AB | 39 ns | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 79A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN027-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn027100ps127-datasheets-8497.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 103W | 1 | 14.4 ns | 11.4ns | 8.9 ns | 29.6 ns | 37A | 20V | 100V | SILICON | DRAIN | SWITCHING | 103W Tc | TO-220AB | 0.0268Ohm | 59 mJ | 100V | N-Channel | 1624pF @ 50V | 26.8m Ω @ 15A, 10V | 4V @ 1mA | 37A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF11P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqpf11p06-datasheets-8503.pdf | -60V | -11.4A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 175MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 30W | 1 | Other Transistors | 6.5 ns | 40ns | 45 ns | 15 ns | 8.6A | 25V | SILICON | ISOLATED | SWITCHING | 60V | 30W Tc | TO-220AB | -60V | P-Channel | 550pF @ 25V | 175m Ω @ 4.3A, 10V | 4V @ 250μA | 8.6A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| SIR668DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir668dpt1re3-datasheets-8472.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 150°C | 17 ns | 30 ns | 23.2A | 20V | 104W Tc | 100V | N-Channel | 5400pF @ 50V | 4.8m Ω @ 20A, 10V | 3.4V @ 250μA | 95A Tc | 83nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI540NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfi540npbf-datasheets-8540.pdf | 100V | 20A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 40 | 42W | 1 | FET General Purpose Power | 2.5kV | 8.2 ns | 39ns | 33 ns | 44 ns | 20A | 20V | 100V | SILICON | ISOLATED | SWITCHING | 4V | 54W Tc | TO-220AB | 250 ns | 0.052Ohm | 100V | N-Channel | 1400pF @ 25V | 4 V | 52m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 94nC @ 10V | 10V | ±20V |
