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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA10P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta10p50ptrl-datasheets-0774.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 1Ohm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | Other Transistors | R-PSSO-G2 | 28ns | 44 ns | 52 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 30A | -500V | P-Channel | 2840pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTK120N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtk120n25p-datasheets-9069.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 17 Weeks | No SVHC | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 33ns | 33 ns | 130 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 5V | 700W Tc | 2.5 mJ | 250V | N-Channel | 8000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 500μA | 120A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh6n100f-datasheets-9071.pdf | TO-247-3 | 3 | 30 Weeks | No SVHC | 1.9Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | 8.6ns | 8.3 ns | 31 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 700 mJ | 1kV | N-Channel | 1770pF @ 25V | 1.9 Ω @ 3A, 10V | 5.5V @ 2.5mA | 6A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDA59N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda59n30-datasheets-8987.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 7 Weeks | 6.401g | No SVHC | 56MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 500W | 1 | FET General Purpose Power | 140 ns | 575ns | 200 ns | 120 ns | 59A | 30V | SILICON | SWITCHING | 5V | 500W Tc | 300V | N-Channel | 4670pF @ 25V | 5 V | 56m Ω @ 29.5A, 10V | 5V @ 250μA | 59A Tc | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF740APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740apbf-datasheets-8854.pdf | 400V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | No SVHC | 550mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 4V | 125W Tc | 550mOhm | 400V | N-Channel | 1030pF @ 25V | 4 V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIR882ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir882adpt1ge3-datasheets-8411.pdf | PowerPAK® SO-8 | Lead Free | 14 Weeks | 506.605978mg | Unknown | 8.7mOhm | 8 | No | 1 | Single | 5.4W | 1 | PowerPAK® SO-8 | 1.975nF | 11 ns | 12ns | 9 ns | 34 ns | 60A | 20V | 100V | 1.2V | 5.4W Ta 83W Tc | 7.2mOhm | N-Channel | 1975pF @ 50V | 8.7mOhm @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 60nC @ 10V | 8.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8320LDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 15 Weeks | 90mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | FLAT | Single | 3.2W | 1 | FET General Purpose Power | R-PDSO-F5 | 19 ns | 15ns | 14 ns | 69 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3.2W Ta 125W Tc | MO-240AA | 300A | N-Channel | 11635pF @ 20V | 1.1m Ω @ 44A, 10V | 3V @ 250μA | 44A Ta 130A Tc | 170nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF5210LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf5210lpbf-datasheets-8886.pdf | -100V | -40A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.54mm | 9.652mm | 4.69mm | Contains Lead | 3 | 12 Weeks | No SVHC | 60mOhm | 3 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 200W | 1 | Other Transistors | 14 ns | 63ns | 55 ns | 72 ns | -40A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.1W Ta 170W Tc | -100V | P-Channel | 2780pF @ 25V | 4 V | 60m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFP350PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp350pbf-datasheets-8897.pdf | 400V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | No SVHC | 300mOhm | 3 | Tin | 16A | 400V | 1 | Single | 190W | 1 | TO-247-3 | 2.6nF | 16 ns | 49ns | 47 ns | 87 ns | 16A | 20V | 400V | 4V | 190W Tc | 570 ns | 300mOhm | 400V | N-Channel | 2600pF @ 25V | 2 V | 300mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 150nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF1010NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1010npbf-datasheets-8910.pdf | 55V | 85A | TO-220-3 | 10.6426mm | 19.8mm | 4.82mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 11MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | e3 | 1 | Single | 180W | 1 | FET General Purpose Power | 175°C | 13 ns | 76ns | 48 ns | 39 ns | 85A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 180W Tc | TO-220AB | 100 ns | 290A | 250 mJ | 55V | N-Channel | 3210pF @ 25V | 4 V | 11m Ω @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK31V60W5,LVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | 150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 4-VSFN Exposed Pad | 16 Weeks | 600V | 240W Tc | N-Channel | 3000pF @ 300V | 109m Ω @ 15.4A, 10V | 4.5V @ 1.5mA | 30.8A Ta | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4227TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfs4227trlpbf-datasheets-8692.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 26MOhm | 3 | EAR99 | Tin | not_compliant | e3 | GULL WING | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33 ns | 20ns | 31 ns | 21 ns | 62A | 30V | SILICON | DRAIN | SWITCHING | 330W Tc | 260A | 200V | N-Channel | 4600pF @ 25V | 26m Ω @ 46A, 10V | 5V @ 250μA | 62A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SMP3003-DL-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-smp3003tl1e-datasheets-0326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.5mm | 9.2mm | Lead Free | 2 | 35 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 90W | 1 | 95 ns | 1μs | 820 ns | 800 ns | 100A | 20V | SILICON | DRAIN | 75V | 90W Tc | 400A | 468 mJ | -75V | P-Channel | 13400pF @ 20V | 8m Ω @ 50A, 10V | 100A Ta | 280nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STW75NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb75nf20-datasheets-0233.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 34MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STW75N | 3 | Single | 190W | 1 | FET General Purpose Power | 53 ns | 33ns | 29 ns | 75 ns | 37A | 20V | SILICON | SWITCHING | 3V | 190W Tc | TO-247AB | 75A | 205 mJ | 200V | N-Channel | 3260pF @ 25V | 34m Ω @ 37A, 10V | 4V @ 250μA | 75A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STW35N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw35n60dm2-datasheets-8968.pdf | TO-247-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW35N | NOT SPECIFIED | 28A | 600V | 4V | 210W Tc | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4115PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4115pbf-datasheets-8974.pdf | TO-220-3 | 10.668mm | 19.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 250 | 1 | Single | 30 | 380W | 1 | FET General Purpose Power | 175°C | 18 ns | 73ns | 39 ns | 41 ns | 104A | 20V | 150V | SILICON | SWITCHING | 5V | 380W Tc | TO-220AB | 420A | 150V | N-Channel | 5270pF @ 50V | 5 V | 11m Ω @ 62A, 10V | 5V @ 250μA | 104A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2 | IXYS | $8.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n100d2-datasheets-2865.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 125W Tc | TO-263AA | N-Channel | 1020pF @ 25V | 5.5 Ω @ 1.5A, 0V | 3A Tc | 37.5nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUG80050E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sug80050ege3-datasheets-8985.pdf | TO-247-3 | 25.11mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 500W | 175°C | 18 ns | 72 ns | 100A | 20V | 500W Tc | 150V | N-Channel | 6250pF @ 75V | 5.4m Ω @ 20A, 10V | 4V @ 250μA | 100A Tc | 165nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH310N10F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sth310n10f72-datasheets-8828.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15.8mm | 4.8mm | 10.4mm | Lead Free | 2 | 2.3mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW RESISTANCE | Tin | GULL WING | STH310 | Single | 315W | 1 | FET General Purpose Power | R-PSSO-G2 | 62 ns | 108ns | 40 ns | 148 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 315W Tc | 720A | 100V | N-Channel | 12800pF @ 25V | 2.5m Ω @ 60A, 10V | 3.8V @ 250μA | 180A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF840ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf840astrrpbf-datasheets-6542.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 850mOhm | 3 | 1 | Single | 3.1W | 1 | D2PAK | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 4V | 3.1W Ta 125W Tc | 850mOhm | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z34pbf-datasheets-8721.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | 60V | -4V | 88W Tc | 140mOhm | P-Channel | 1100pF @ 25V | -4 V | 140mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf840lcpbf-datasheets-8729.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 500V | 4V | 125W Tc | 740 ns | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SQM40031EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm40031elge3-datasheets-8739.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 21 ns | 250 ns | -120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 375W Tc | 300A | 0.003Ohm | -40V | P-Channel | 39000pF @ 25V | 3m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 800nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STF10N65K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfi10n65k3-datasheets-5768.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF10N | 3 | 35W | 1 | FET General Purpose Power | 14.5 ns | 14ns | 35 ns | 44 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 3V | 35W Tc | TO-220AB | 40A | 0.85Ohm | 650V | N-Channel | 1180pF @ 25V | 1 Ω @ 3.6A, 10V | 4.5V @ 100μA | 10A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STB75NF75T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp75nf75-datasheets-9543.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 11mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB75N | 3 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 100ns | 30 ns | 66 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 75A | 700 mJ | 75V | N-Channel | 3700pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF2807ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf2807zpbf-datasheets-8787.pdf | 75V | 75A | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 9.4Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | Single | 170W | 1 | FET General Purpose Power | 18 ns | 79ns | 45 ns | 40 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | TO-220AB | 75V | N-Channel | 3270pF @ 25V | 4 V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STB26N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb26n60m2-datasheets-8737.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | STB26N | 600V | 169W Tc | N-Channel | 1360pF @ 100V | 165m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 34nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI1310NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfi1310npbf-datasheets-8801.pdf | 100V | 36A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 45W | 1 | FET General Purpose Power | 2.5kV | 11 ns | 56ns | 40 ns | 45 ns | 24A | 20V | 100V | SILICON | ISOLATED | SWITCHING | 4V | 56W Tc | TO-220AB | 22A | 420 mJ | 100V | N-Channel | 1900pF @ 25V | 4 V | 36m Ω @ 13A, 10V | 4V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPD50P03L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spw12n50c3fksa1-datasheets-2797.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | P-TO252-5 | 30V | P-Channel | 6.88pF @ 25V | 7mOhm @ 50A, 10V | 2V @ 250μA | 50A Tc | 126nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM90142E_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqm90142ege3-datasheets-8711.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 17 ns | 39 ns | 95A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 375W Tc | 205 mJ | 200V | N-Channel | 4200pF @ 25V | 15.3m Ω @ 20A, 10V | 3.5V @ 250μA | 95A Tc | 85nC @ 10V | 10V | ±20V |
