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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD18502Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18502 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 3.2W Ta 156W Tc | 26A | 400A | 0.0033Ohm | 27 pF | N-Channel | 5070pF @ 20V | 2.3m Ω @ 30A, 10V | 2.2V @ 250μA | 100A Ta | 33nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD17556Q5BT | Texas Instruments | $2.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 950μm | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD17556 | Single | NOT SPECIFIED | 1 | 14 ns | 26ns | 12 ns | 27 ns | 215A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 191W Tc | 34A | 214A | 500 mJ | N-Channel | 7020pF @ 15V | 1.4m Ω @ 40A, 10V | 1.65V @ 250μA | 100A Ta | 39nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPAN60R210PFD7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 650V | 25W Tc | N-Channel | 1015pF @ 400V | 210m Ω @ 4.9A, 10V | 4.5V @ 240μA | 16A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP12N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp12n50ege3-datasheets-4751.pdf | TO-220-3 | 3 | 18 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 13 ns | 16ns | 12 ns | 29 ns | 10.5A | 20V | SILICON | SWITCHING | 500V | 500V | 4V | 114W Tc | TO-220AB | N-Channel | 886pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 10.5A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF12N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdpf12n50nz-datasheets-4756.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 520mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 50ns | 45 ns | 60 ns | 11.5A | 25V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 42W Tc | TO-220AB | 46A | 560 mJ | N-Channel | 1235pF @ 25V | 520m Ω @ 5.75A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| FQP6N80C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqpf6n80c-datasheets-3653.pdf&product=onsemiconductor-fqp6n80c-6843509 | TO-220-3 | 3 | 7 Weeks | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 158W Tc | TO-220AB | 5.5A | 22A | 680 mJ | N-Channel | 1310pF @ 25V | 2.5 Ω @ 2.75A, 10V | 5V @ 250μA | 5.5A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF400N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fcpf400n60-datasheets-4781.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 15 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 31W | 1 | FET General Purpose Power | 13 ns | 7ns | 6 ns | 43 ns | 10A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 2.5V | 31W Tc | TO-220AB | 0.4Ohm | 650V | N-Channel | 1580pF @ 25V | 400m Ω @ 5A, 10V | 3.5V @ 250μA | 10A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP3N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu3n62k3-datasheets-7310.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 2.5Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | STP3N | 3 | Single | 45W | 1 | FET General Purpose Power | 9 ns | 6.8ns | 15.6 ns | 22 ns | 2.7A | 30V | SILICON | SWITCHING | 45W Tc | TO-220AB | 10.8A | 100 mJ | 620V | N-Channel | 385pF @ 25V | 3.75 V | 2.5 Ω @ 1.4A, 10V | 4.5V @ 50μA | 2.7A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STF10NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf10nm60nd-datasheets-0583.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 550MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF10N | 3 | Single | 25W | 1 | FET General Purpose Power | 9.2 ns | 10ns | 9.8 ns | 32 ns | 8A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 4V | 25W Tc | TO-220AB | 8A | 650V | N-Channel | 540pF @ 50V | 550m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STF11N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf11n50m2-datasheets-4798.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | STF11 | 8A | 500V | 25W Tc | N-Channel | 395pF @ 100V | 530m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF7N65CYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqpf7n65cydtu-datasheets-4802.pdf | TO-220-3 Full Pack, Formed Leads | 4 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 52W | 1 | FET General Purpose Power | 20 ns | 50ns | 55 ns | 90 ns | 7A | 30V | 52W Tc | 7A | 650V | N-Channel | 1245pF @ 25V | 1.4 Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF11N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf11n65m2-datasheets-4709.pdf | TO-220-3 Full Pack | 16 Weeks | 329.988449mg | No SVHC | 600mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STF11 | 1 | NOT SPECIFIED | 9.5 ns | 7.5ns | 15 ns | 26 ns | 7A | 25V | 3V | 25W Tc | 650V | N-Channel | 410pF @ 100V | 670m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 12.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU11N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu11n65m2-datasheets-4634.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | 3.949996g | No SVHC | 600mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU11N | 1 | NOT SPECIFIED | 8.5 ns | 7.5ns | 15 ns | 26 ns | 7A | 25V | 3V | 85W Tc | 650V | N-Channel | 410pF @ 100V | 670m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 12.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R3A06PL,S4X | Toshiba Semiconductor and Storage | $6.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF8N60ZUT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf8n60zut-datasheets-4639.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 9 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 21 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 34.5W | 1 | FET General Purpose Power | 20 ns | 30ns | 35 ns | 55 ns | 6.5A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 34.5W Tc | TO-220AB | 26A | 420 mJ | 600V | N-Channel | 1265pF @ 25V | 1.35 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STF6N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n52k3-datasheets-4208.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | STF6N | 3 | Single | 25W | 1 | FET General Purpose Power | 10 ns | 11ns | 18 ns | 31 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 5A | 20A | 110 mJ | 525V | N-Channel | 670pF @ 50V | 1.2 Ω @ 2.5A, 10V | 4.5V @ 50μA | 5A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TK750A60F,S4X | Toshiba Semiconductor and Storage | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-220-3 Full Pack | 12 Weeks | 600V | 40W Tc | N-Channel | 1130pF @ 300V | 750m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASPBF | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | Tin | No | 1 | Single | 74W | 1 | D2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQP8N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqp8n60c-datasheets-4656.pdf&product=onsemiconductor-fqp8n60c-6843488 | 600V | 7.5A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 1.8g | No SVHC | 1.2Ohm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 147W | 1 | Not Qualified | 16.5 ns | 60.5ns | 64.5 ns | 81 ns | 7.5A | 30V | 600V | SILICON | SWITCHING | 4V | 147W Tc | TO-220AB | 600V | N-Channel | 1255pF @ 25V | 4 V | 1.2 Ω @ 3.75A, 10V | 4V @ 250μA | 7.5A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STP130N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp130n6f7-datasheets-4666.pdf | TO-220-3 | Lead Free | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP130 | NOT SPECIFIED | 80A | 60V | 160W Tc | N-Channel | 2600pF @ 25V | 5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6R7A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF624PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf624pbf-datasheets-4672.pdf | 250V | 4.4A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.1Ohm | 3 | No | 1 | Single | 50W | TO-220AB | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 4.4A | 20V | 250V | 50W Tc | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 4.4A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP76NF75 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb76nf75-datasheets-8641.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP76N | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 100ns | 30 ns | 66 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 320A | 700 mJ | 75V | N-Channel | 3700pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD16401Q5T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | CSD16401 | Single | 1 | SILICON | DRAIN | SWITCHING | 25V | 25V | 3.1W Ta | 240A | 0.0023Ohm | 230 pF | 500 mJ | N-Channel | 4100pF @ 12.5V | 1.6m Ω @ 40A, 10V | 1.9V @ 250μA | 100A Ta | 29nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD16415Q5T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD16415 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 25V | 25V | 3.2W Ta | 200A | 230 pF | 500 mJ | N-Channel | 4100pF @ 12.5V | 1.15m Ω @ 40A, 10V | 1.9V @ 250μA | 100A Ta | 29nC @ 4.5V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFI720GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfi720gpbf-datasheets-4695.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 30W | 1 | TO-220-3 | 410pF | 2.5kV | 10 ns | 14ns | 13 ns | 30 ns | 2.6A | 20V | 400V | 4V | 30W Tc | 600 ns | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 1.8Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHB10N40D-GE3 | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb10n40dge3-datasheets-4705.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | yes | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 12 ns | 18ns | 14 ns | 18 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 147W Tc | 23A | 0.6Ohm | 194 mJ | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP1N105K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfw1n105k3-datasheets-8066.pdf | TO-220-3 | Lead Free | 11Ohm | EAR99 | No | STP1N | 60W | FET General Purpose Powers | 6 ns | 7ns | 50 ns | 27 ns | 1.4A | 20V | Single | 1050V | 60W Tc | 1.05kV | N-Channel | 180pF @ 100V | 11 Ω @ 600mA, 10V | 4.5V @ 50μA | 1.4A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7J90E,S1E | Toshiba Semiconductor and Storage | $2.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 1.35nF | 55 ns | 20ns | 15 ns | 85 ns | 7A | 30V | 900V | 200W Tc | 1.6Ohm | 900V | N-Channel | 1350pF @ 25V | 2Ohm @ 3.5A, 10V | 4V @ 700μA | 7A Ta | 32nC @ 10V | 2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R280CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipaw60r280cexksa1-datasheets-4541.pdf | TO-220-3 Full Pack, Variant | 3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 19.3A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 3V | 32W Tc | TO-220AB | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 19.3A Tc | 43nC @ 10V | Super Junction | 10V | ±20V |
