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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQM200N04-1M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqm200n041m7lge3-datasheets-4508.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | 12 Weeks | 1.59999g | Unknown | 7 | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G6 | 22 ns | 17ns | 16 ns | 70 ns | 200A | 20V | SILICON | 40V | 40V | 2V | 375W Tc | 600A | N-Channel | 11168pF @ 20V | 1.7m Ω @ 30A, 10V | 2.5V @ 250μA | 200A Tc | 291nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP90N6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | Lead Free | 329.988449mg | EAR99 | Tin | NOT SPECIFIED | STP90N | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 22 ns | 42ns | 16 ns | 73 ns | 84A | 20V | 60V | 136W Tc | 90A | N-Channel | 4295pF @ 25V | 6.8m Ω @ 38.5A, 10V | 4V @ 250μA | 84A Tc | 74.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQM30010EL_GE3 | Vishay Siliconix | $2.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm30010elge3-datasheets-4472.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 30V | 375W Tc | N-Channel | 28000pF @ 15V | 1.35mOhm @ 40A, 10V | 2.5V @ 250μA | 120A Tc | 450nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF12N50FT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf12n50ft-datasheets-4582.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 8 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 42W | 1 | FET General Purpose Power | 21 ns | 45ns | 35 ns | 50 ns | 11.5A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 46A | 0.7Ohm | 456 mJ | 500V | N-Channel | 1395pF @ 25V | 700m Ω @ 6A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STF12N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf12n60m2-datasheets-4587.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF12 | NOT SPECIFIED | 9A | 600V | 25W Tc | N-Channel | 538pF @ 100V | 450m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 16nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT66920L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 8.3W Ta 100W Tc | N-Channel | 2500pF @ 50V | 8m Ω @ 20A, 10V | 2.5V @ 250μA | 22.5A Ta 80A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP5N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf5n60c-datasheets-2910.pdf | 600V | 4.5A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 2.5Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 100W | 1 | FET General Purpose Power | 10 ns | 42ns | 46 ns | 38 ns | 4.5A | 30V | SILICON | SWITCHING | 4V | 100W Tc | TO-220AB | 600V | N-Channel | 670pF @ 25V | 2.5 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| FDP12N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdp12n60nz-datasheets-4608.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 8 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 240W | 1 | FET General Purpose Power | 25 ns | 50ns | 60 ns | 80 ns | 12A | 30V | SILICON | SWITCHING | 3V | 240W Tc | TO-220AB | 48A | 0.65Ohm | 565 mJ | 600V | N-Channel | 1676pF @ 25V | 650m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRF820SPBF | Vishay Siliconix | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820spbf-datasheets-4619.pdf | 500V | 2.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 12 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 360pF | 8 ns | 8.8ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 3.1W Ta 50W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| CSD17570Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD17570 | 1 | Single | NOT SPECIFIED | 1 | 5 ns | 36ns | 44 ns | 144 ns | 53A | 20V | SILICON | DRAIN | 30V | 30V | 3.2W Ta | 360A | 0.00092Ohm | 450 mJ | N-Channel | 13600pF @ 15V | 0.69m Ω @ 50A, 10V | 1.9V @ 250μA | 100A Ta | 121nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| STF2N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std2n62k3-datasheets-5920.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.6Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | STF2N | 3 | Single | 20W | 1 | 8 ns | 4.4ns | 22 ns | 21 ns | 2.2A | 30V | SILICON | SWITCHING | 3.75V | 20W Tc | TO-220AB | 8.8A | 85 mJ | 620V | N-Channel | 340pF @ 50V | 3.6 Ω @ 1.1A, 10V | 4.5V @ 50μA | 2.2A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| TK7J90E,S1E | Toshiba Semiconductor and Storage | $2.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 1.35nF | 55 ns | 20ns | 15 ns | 85 ns | 7A | 30V | 900V | 200W Tc | 1.6Ohm | 900V | N-Channel | 1350pF @ 25V | 2Ohm @ 3.5A, 10V | 4V @ 700μA | 7A Ta | 32nC @ 10V | 2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R280CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipaw60r280cexksa1-datasheets-4541.pdf | TO-220-3 Full Pack, Variant | 3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 19.3A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 3V | 32W Tc | TO-220AB | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 19.3A Tc | 43nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCPF1300N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcpf1300n80z-datasheets-4545.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 18 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 14 ns | 8.3ns | 6 ns | 33 ns | 4A | 20V | 24W Tc | 4A | 800V | N-Channel | 880pF @ 100V | 1.3 Ω @ 2A, 10V | 4.5V @ 400μA | 4A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STU9N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp9n65m2-datasheets-5236.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | 3.949996g | No SVHC | 790mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU9N | 1 | NOT SPECIFIED | 7.5 ns | 6.6ns | 18 ns | 22.5 ns | 5A | 25V | 650V | 3V | 60W Tc | N-Channel | 315pF @ 100V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 10nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOTF66920L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 8.3W Ta 27.5W Tc | N-Channel | 2500pF @ 50V | 8.2m Ω @ 20A, 10V | 2.5V @ 250μA | 22.5A Ta 41A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF4N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4n80k5-datasheets-8540.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 2.5Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STF4N | 1 | Single | 1 | 16.5 ns | 15ns | 21 ns | 36 ns | 3A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | 20W Tc | TO-220AB | 3A | 74.5 mJ | N-Channel | 175pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3A Tc | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP80N6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp80n6f6-datasheets-4474.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP80N | 1 | Single | FET General Purpose Powers | 110A | 20V | 120W Tc | 60V | N-Channel | 7480pF @ 25V | 5.8m Ω @ 50A, 10V | 4.5V @ 250μA | 110A Tc | 122nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R2E06PL,S1X | Toshiba Semiconductor and Storage | $1.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP3NK60ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp3nk60z-datasheets-5037.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 9.071847g | No SVHC | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP3N | 3 | Single | 20W | 1 | FET General Purpose Power | 9 ns | 14ns | 14 ns | 19 ns | 2.4A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 20W Tc | TO-220AB | 9.6A | 600V | N-Channel | 311pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.4A Tc | 11.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STP2N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std2n95k5-datasheets-7286.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP2N | 1 | Single | 1 | 8.5 ns | 13.5ns | 32.5 ns | 20.5 ns | 2A | 30V | SILICON | SWITCHING | 950V | 950V | 45W Tc | TO-220AB | 2A | 8A | 5Ohm | 50 mJ | N-Channel | 105pF @ 100V | 5 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 10nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||
| SIHF6N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf6n40de3-datasheets-4487.pdf | TO-220-3 Full Pack | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 30W | 1 | FET General Purpose Powers | 12 ns | 11ns | 8 ns | 14 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 6A | 1Ohm | 400V | N-Channel | 311pF @ 100V | 1 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FQP6N40C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp6n40cf-datasheets-3035.pdf | 400V | 6A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 73W | 1 | FET General Purpose Power | Not Qualified | 13 ns | 65ns | 38 ns | 21 ns | 6A | 30V | SILICON | SWITCHING | 73W Tc | TO-220AB | 6A | 24A | 1Ohm | 270 mJ | 400V | N-Channel | 625pF @ 25V | 1 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| FDPF18N20FT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf18n20ft-datasheets-4501.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 41W | 1 | FET General Purpose Power | 16 ns | 50ns | 40 ns | 50 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 41W Tc | TO-220AB | 72A | 200V | N-Channel | 1180pF @ 25V | 140m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STP4N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4n80k5-datasheets-8540.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 2.5Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STP4N | 1 | Single | 60W | 1 | 16.5 ns | 15ns | 21 ns | 36 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 60W Tc | TO-220AB | 3A | 74.5 mJ | 800V | N-Channel | 175pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3A Tc | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STF9N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp9n65m2-datasheets-5236.pdf | TO-220-3 Full Pack | 16 Weeks | No SVHC | 790mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STF9 | NOT SPECIFIED | 5A | 650V | 3V | 20W Tc | N-Channel | 315pF @ 100V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 10nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50N04-4M1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqm50n044m1ge3-datasheets-4259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1.946308g | Unknown | 3 | No | 1 | Single | TO-263 (D2Pak) | 6.715nF | 12 ns | 5ns | 9 ns | 35 ns | 50A | 20V | 40V | 3V | 150W Tc | 4.1mOhm | N-Channel | 6715pF @ 25V | 4.1mOhm @ 30A, 10V | 3.5V @ 250μA | 50A Tc | 105nC @ 10V | 4.1 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQP6N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqp6n60c-datasheets-4437.pdf&product=onsemiconductor-fqp6n60c-6843437 | 600V | 5.5A | TO-220-3 | Lead Free | 3 | 6 Weeks | 1.8g | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PSFM-T3 | 45ns | 45 ns | 45 ns | 5.5A | 30V | SILICON | SWITCHING | 125W Tc | TO-220AB | 22A | 2Ohm | 300 mJ | 600V | N-Channel | 810pF @ 25V | 2 Ω @ 2.75A, 10V | 4V @ 250μA | 5.5A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| TK5R3A06PL,S4X | Toshiba Semiconductor and Storage | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU7N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu7n65m2-datasheets-4451.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | 3.949996g | No SVHC | 980mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU7N | NOT SPECIFIED | 8 ns | 20ns | 20 ns | 30 ns | 5A | 25V | 3V | 60W Tc | 650V | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 9nC @ 10V | 10V | ±25V |
