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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD18542KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | CSD18542 | Single | NOT SPECIFIED | 1 | 170A | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.8V | 250W Tc | 200A | 400A | 0.0051Ohm | 14 pF | 281 mJ | N-Channel | 5070pF @ 30V | 4m Ω @ 100A, 10V | 2.2V @ 250μA | 200A Ta 170A Tc | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF7N52DK3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFREDmesh3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf7n52dk3-datasheets-4428.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 1.15Ohm | 3 | NRND (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF7N | 3 | Single | 25W | 1 | FET General Purpose Power | 12 ns | 12ns | 19 ns | 37 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 6A | 24A | 100 mJ | 525V | N-Channel | 870pF @ 50V | 1.15 Ω @ 3A, 10V | 4.5V @ 50μA | 6A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPA65R400CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-ipa65r400cexksa1-datasheets-4337.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 30A | 0.4Ohm | 215 mJ | N-Channel | 710pF @ 100V | 400m Ω @ 3.2A, 10V | 3.5V @ 320μA | 39nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM40012EL-GE3 | Vishay Siliconix | $2.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum40012elge3-datasheets-4341.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 40V | 150W Tc | N-Channel | 10930pF @ 20V | 1.67m Ω @ 30A, 10V | 2.5V @ 250μA | 150A Tc | 195nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF5N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdpf5n60nz-datasheets-4348.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 2Ohm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | Single | 33W | 1 | FET General Purpose Power | 15 ns | 20ns | 20 ns | 35 ns | 4.5A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 33W Tc | TO-220AB | 600V | N-Channel | 600pF @ 25V | 2 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 13nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| STP9NK65ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk65zfp-datasheets-4358.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP9N | 3 | Single | 30W | 1 | FET General Purpose Power | 20 ns | 12ns | 15 ns | 45 ns | 6.4A | 30V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 25.6A | 200 mJ | 650V | N-Channel | 1145pF @ 25V | 1.2 Ω @ 3.2A, 10V | 4.5V @ 100μA | 6.4A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STP5N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu5n60m2-datasheets-4244.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP5N | 1 | Single | 1 | 11.8 ns | 70 ns | 3.7A | 25V | SILICON | DRAIN | SWITCHING | 45W Tc | TO-220AB | 80 mJ | 600V | N-Channel | 165pF @ 100V | 1.4 Ω @ 1.85A, 10V | 4V @ 250μA | 3.7A Tc | 4.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| R6507ENJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6507enjtl-datasheets-4371.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 78W Tc | 7A | 21A | 0.665Ohm | 136 mJ | N-Channel | 390pF @ 25V | 665m Ω @ 2.4A, 10V | 4V @ 200μA | 7A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK42A12N1,S4X | Toshiba Semiconductor and Storage | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 3.1nF | 40 ns | 18ns | 22 ns | 64 ns | 42A | 20V | 120V | 35W Tc | 7.8mOhm | N-Channel | 3100pF @ 60V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 42A Tc | 52nC @ 10V | 9.4 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 3.7W Ta 150W Tc | 28mOhm | 60V | N-Channel | 1900pF @ 25V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP10N40D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihp10n40dge3-datasheets-4383.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 147W | 1 | FET General Purpose Power | 12 ns | 18ns | 14 ns | 18 ns | 10A | 30V | SILICON | SWITCHING | 3V | 147W Tc | TO-220AB | 0.6Ohm | 400V | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| R8002ANJFRGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r8002anjfrgtl-datasheets-4141.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 23 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 62W Tc | 2A | 8A | 0.265 mJ | N-Channel | 250pF @ 25V | 4.3 Ω @ 1A, 10V | 5V @ 1mA | 2A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF6N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf6n65m2-datasheets-4408.pdf | TO-220-3 Full Pack | 16 Weeks | 329.988449mg | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STF6N | 1 | NOT SPECIFIED | 19 ns | 7ns | 20 ns | 6.5 ns | 4A | 25V | 650V | 3V | 20W Tc | N-Channel | 226pF @ 100V | 1.35 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 9.8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM40016EM_GE3 | Vishay Siliconix | $2.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40016emge3-datasheets-4412.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 14 Weeks | TO-263-7 | 40V | 300W Tc | N-Channel | 15000pF @ 25V | 1mOhm @ 40A, 10V | 3.5V @ 250μA | 250A Tc | 245nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA95R1K2P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa95r1k2p7xksa1-datasheets-4414.pdf | TO-220-3 Full Pack | 18 Weeks | 950V | 27W Tc | N-Channel | 478pF @ 400V | 1.2 Ω @ 2.7A, 10V | 3.5V @ 140μA | 6A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF3N80C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqpf3n80c-datasheets-4313.pdf | 800V | 3A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 8 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 39W | 1 | FET General Purpose Power | 15 ns | 43.5ns | 32 ns | 22.5 ns | 3A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 39W Tc | TO-220AB | 3A | 800V | N-Channel | 705pF @ 25V | 4.8 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 16.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| CSD18512Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 950μm | AVALANCHE RATED | not_compliant | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | CSD18512 | Single | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 139W Tc | 32A | 400A | 0.0023Ohm | 333 pF | 205 mJ | N-Channel | 7120pF @ 20V | 1.6m Ω @ 30A, 10V | 2.2V @ 250μA | 211A Tc | 98nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP70N04S406AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp70n04s406aksa1-datasheets-4330.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 8 ns | 10ns | 9 ns | 7 ns | 70A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 58W Tc | TO-220AB | 280A | 0.0065Ohm | 72 mJ | N-Channel | 2550pF @ 25V | 6.5m Ω @ 70A, 10V | 4V @ 26μA | 70A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irl3803pbf-datasheets-4231.pdf | 30V | 140A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 6mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | Single | 150W | 1 | FET General Purpose Power | 14 ns | 230ns | 35 ns | 29 ns | 140A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 200W Tc | TO-220AB | 180 ns | 470A | 30V | N-Channel | 5000pF @ 25V | 1 V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| SQM50P08-25L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50p0825lge3-datasheets-4124.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 80V | 150W Tc | P-Channel | 5350pF @ 25V | 25mOhm @ 12.5A, 10V | 2.5V @ 250μA | 50A Tc | 137nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU5N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu5n60m2-datasheets-4244.pdf | TO-220-3 | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 26 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU5N | 1 | Single | NOT SPECIFIED | 1 | 11.8 ns | 70 ns | 3.7A | 25V | SILICON | DRAIN | SWITCHING | 600V | 45W Tc | 80 mJ | 650V | N-Channel | 165pF @ 100V | 1.4 Ω @ 1.85A, 10V | 4V @ 250μA | 3.7A Tc | 4.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL630SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl630spbf-datasheets-4254.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 400mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 3.1W Ta 74W Tc | 340 ns | 400mOhm | N-Channel | 1100pF @ 25V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STB5NK52ZD-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb5nk52zd1-datasheets-4264.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | AVALANCHE RATED | unknown | NOT SPECIFIED | STB5N | 3 | Single | NOT SPECIFIED | 70W | 1 | FET General Purpose Power | Not Qualified | 13.6ns | 15 ns | 23.1 ns | 4.4A | 30V | SILICON | SWITCHING | 70W Tc | 17.6A | 170 mJ | 520V | N-Channel | 529pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 16.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18510KTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | 4.44mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | CSD18510 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 250W Ta | 200A | 400A | 0.0026Ohm | 551 pF | N-Channel | 11400pF @ 20V | 1.7m Ω @ 100A, 10V | 2.3V @ 250μA | 274A Tc | 153nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQM40041EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40041elge3-datasheets-4278.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 157W Tc | P-Channel | 23600pF @ 25V | 3.4mOhm @ 25A, 10V | 2.5V @ 250μA | 120A Tc | 450nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK650A60F,S4X | Toshiba Semiconductor and Storage | $1.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-220-3 Full Pack | 12 Weeks | 600V | 45W Tc | N-Channel | 1320pF @ 300V | 650m Ω @ 5.5A, 10V | 4V @ 1.16mA | 11A Ta | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP10LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp10ln80k5-datasheets-4289.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP10 | NOT SPECIFIED | 8A | 800V | 110W Tc | N-Channel | 427pF @ 100V | 630m Ω @ 4A, 10V | 5V @ 100μA | 8A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020KNX | ROHM Semiconductor | $2.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-220-3 Full Pack | 3 | 18 Weeks | No SVHC | 3 | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 5V | 68W Tc | TO-220AB | 60A | 0.196Ohm | 418 mJ | N-Channel | 1550pF @ 25V | 196m Ω @ 9.5A, 10V | 5V @ 1mA | 20A Tc | 40nC @ 10V | Schottky Diode (Isolated) | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP75N75F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp75n75f4-datasheets-4305.pdf | TO-220-3 | Lead Free | EAR99 | unknown | STP75N | 150W | 33ns | 14 ns | 61 ns | 78A | 150W Tc | 75V | N-Channel | 5015pF @ 25V | 11m Ω @ 39A, 10V | 4V @ 250μA | 78A Tc | 76nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7R4A10PL,S4X | Toshiba Semiconductor and Storage | $1.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks |
