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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL630SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl630spbf-datasheets-4254.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 400mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 3.1W Ta 74W Tc | 340 ns | 400mOhm | N-Channel | 1100pF @ 25V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| STF9HN65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf9hn65m2-datasheets-4144.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF9 | NOT SPECIFIED | 5.5A | 650V | 20W Tc | N-Channel | 325pF @ 100V | 820m Ω @ 2.5A, 10V | 4V @ 250μA | 5.5A Tc | 11.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R280E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipa65r280e6xksa1-datasheets-4154.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 11 ns | 9ns | 76 ns | 13.8A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 0.28Ohm | 290 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STP5N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp5n105k5-datasheets-4161.pdf | TO-220-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP5N | NOT SPECIFIED | FET General Purpose Power | 3A | Single | 1050V | 85W Tc | 3A | N-Channel | 210pF @ 100V | 3.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3A Tc | 12.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ48GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/vishaysiliconix-irfiz48gpbf-datasheets-4165.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 18mOhm | 3 | No | 1 | Single | 50W | 1 | TO-220-3 | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 37A | 20V | 60V | 4V | 50W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 22A, 10V | 4V @ 250μA | 37A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TSM4ND60CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nd60cic0g-datasheets-4180.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | ITO-220 | 600V | 41.6W Tc | N-Channel | 582pF @ 50V | 2.2Ohm @ 1.4A, 10V | 3.8V @ 250μA | 4A Tc | 17.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM100N02-3M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100n023m5lge3-datasheets-4095.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 20V | 150W Tc | N-Channel | 5500pF @ 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP7N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdp7n60nz-datasheets-4185.pdf | TO-220-3 | 10.67mm | 20.4mm | 4.83mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 1.25MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1 | Single | 147W | 1 | FET General Purpose Power | 150°C | 17.5 ns | 30ns | 25 ns | 40 ns | 6.5A | 30V | SILICON | SWITCHING | 3V | 147W Tc | TO-220AB | 26A | 275 mJ | 600V | N-Channel | 730pF @ 25V | 1.25 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDB088N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdb088n08-datasheets-4171.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | 2 | 8 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 45 ns | 158ns | 102 ns | 244 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 2V | 160W Tc | 85A | 0.0088Ohm | 75V | N-Channel | 6595pF @ 25V | 8.8m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPAN60R360PFD7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 650V | 23W Tc | N-Channel | 534pF @ 400V | 360m Ω @ 2.9A, 10V | 4.5V @ 140μA | 10A Tc | 12.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R190P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r190p6xksa1-datasheets-4208.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15 ns | 8ns | 7 ns | 45 ns | 20.2A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 57A | 0.19Ohm | 419 mJ | N-Channel | 1750pF @ 100V | 190m Ω @ 7.6A, 10V | 4.5V @ 630μ | 20.2A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFB3206GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfb3206gpbf-datasheets-4215.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 13 Weeks | 3MOhm | 3 | EAR99 | No | Single | 300W | 1 | FET General Purpose Power | 19 ns | 82ns | 83 ns | 55 ns | 210A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 120A | 840A | 170 mJ | 60V | N-Channel | 6540pF @ 50V | 3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFI840GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi840gpbf-datasheets-4225.pdf | 500V | 4.6A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 2.5kV | 14 ns | 22ns | 21 ns | 55 ns | 4.6A | 20V | 500V | 4V | 40W Tc | 680 ns | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 2.8A, 10V | 4V @ 250μA | 4.6A Tc | 67nC @ 10V | 850 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STP170N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp170n8f7-datasheets-4119.pdf | TO-220-3 | Lead Free | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP170 | NOT SPECIFIED | 120A | 80V | 250W Tc | N-Channel | 8710pF @ 40V | 3.9m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK110E10PL,S1X | Toshiba Semiconductor and Storage | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8860 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdp8860-datasheets-4126.pdf | 30V | 80A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 10 Weeks | 1.8g | No SVHC | 2.5MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 254W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 135ns | 59 ns | 64 ns | 80A | 20V | SILICON | SWITCHING | 1.6V | 254W Tc | TO-220AB | 556A | 30V | N-Channel | 12240pF @ 15V | 2.5m Ω @ 80A, 10V | 2.5V @ 250μA | 80A Tc | 222nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP65R225C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r225c7xksa1-datasheets-4135.pdf | TO-220-3 | Lead Free | 18 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 9 ns | 6ns | 10 ns | 48 ns | 11A | 20V | 650V | 63W Tc | N-Channel | 996pF @ 400V | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 11A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF6N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf6n90k5-datasheets-4045.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF6N | 900V | 25W Tc | N-Channel | 1.1 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1404ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl1404zstrlpbf-datasheets-8259.pdf | 40V | 75A | TO-220-3 | 10.6426mm | 8.77mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.1MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | Single | 230W | 1 | FET General Purpose Power | 19 ns | 180ns | 49 ns | 30 ns | 75A | 16V | 40V | SILICON | DRAIN | SWITCHING | 2.7V | 230W Tc | TO-220AB | 39 ns | 200A | 790A | 220 mJ | 40V | N-Channel | 5080pF @ 25V | 2.7 V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 75A Tc | 110nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| IPA045N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipa045n10n3gxksa1-datasheets-4061.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 39W | 1 | Not Qualified | 25 ns | 47ns | 15 ns | 50 ns | 64A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 256A | 0.0045Ohm | 540 mJ | N-Channel | 8410pF @ 50V | 4.5m Ω @ 64A, 10V | 3.5V @ 150μA | 64A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRL3713PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irl3713strlpbf-datasheets-3021.pdf | 30V | 250A | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | Lead Free | 3 | 14 Weeks | No SVHC | 3mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | Single | 200W | 1 | FET General Purpose Power | 16 ns | 160ns | 57 ns | 40 ns | 260A | 20V | 30V | SILICON | DRAIN | SWITCHING | 2.5V | 330W Tc | TO-220AB | 75A | 30V | N-Channel | 5890pF @ 15V | 2.5 V | 3m Ω @ 38A, 10V | 2.5V @ 250μA | 260A Tc | 110nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP65R310CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r310cfdatma1-datasheets-1369.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 11 ns | 7.5ns | 7 ns | 45 ns | 11.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104.2W Tc | TO-220AB | 290 mJ | N-Channel | 1100pF @ 100V | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STP7N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw7n95k3-datasheets-2031.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.35Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP7N | 3 | Single | 150W | 1 | FET General Purpose Power | 14 ns | 9ns | 23 ns | 36 ns | 7.2A | 30V | SILICON | SWITCHING | 4V | 150W Tc | TO-220AB | 28.8A | 220 mJ | 950V | N-Channel | 1031pF @ 100V | 1.35 Ω @ 3.6A, 10V | 5V @ 100μA | 7.2A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP15N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi15n65m5-datasheets-6158.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 340MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP15N | Single | 85W | 1 | 30 ns | 30 ns | 11A | 25V | SILICON | DRAIN | SWITCHING | 125W Tc | TO-220AB | 44A | 650V | N-Channel | 810pF @ 100V | 340m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 22nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| STP7N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp7n90k5-datasheets-4091.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STP7N | 900V | 110W Tc | N-Channel | 425pF @ 10V | 810m Ω @ 4A, 10V | 5V @ 100μA | 7A Tc | 17.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP11N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcp11n60-datasheets-4097.pdf | 600V | 11A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 380MOhm | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 125W | 1 | 34 ns | 98ns | 56 ns | 119 ns | 11A | 30V | SILICON | SWITCHING | 5V | 125W Tc | TO-220AB | 600V | N-Channel | 1490pF @ 25V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STU6NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6nf10-datasheets-4107.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STU6N | 3 | Single | 30W | 1 | FET General Purpose Power | 6 ns | 10ns | 3 ns | 20 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30W Tc | 6A | 24A | 0.25Ohm | 200 mJ | 100V | N-Channel | 280pF @ 25V | 250m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SUP90220E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90220ege3-datasheets-4113.pdf | TO-220-3 | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 30 | 200V | 230W Tc | 18mOhm | N-Channel | 1950pF @ 100V | 4V @ 250μA | 64A Tc | 48nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9220PBF | Vishay Siliconix | $5.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 1.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Ta 42W Tc | -200V | P-Channel | 340pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP1R6N50D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50d2-datasheets-1609.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | UL RECOGNIZED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 70ns | 41 ns | 35 ns | 1.6A | 20V | SILICON | DRAIN | AMPLIFIER | 100W Tc | TO-220AB | 500V | N-Channel | 645pF @ 25V | 2.3 Ω @ 800mA, 0V | 1.6A Tc | 23.7nC @ 5V | Depletion Mode | ±20V |
