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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCP11N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcp11n60-datasheets-4097.pdf | 600V | 11A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 380MOhm | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 125W | 1 | 34 ns | 98ns | 56 ns | 119 ns | 11A | 30V | SILICON | SWITCHING | 5V | 125W Tc | TO-220AB | 600V | N-Channel | 1490pF @ 25V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STU6NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6nf10-datasheets-4107.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STU6N | 3 | Single | 30W | 1 | FET General Purpose Power | 6 ns | 10ns | 3 ns | 20 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30W Tc | 6A | 24A | 0.25Ohm | 200 mJ | 100V | N-Channel | 280pF @ 25V | 250m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75639P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75639p3-datasheets-4015.pdf | 100V | 56A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 25mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 200W | 1 | FET General Purpose Power | 15 ns | 60ns | 25 ns | 20 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 100V | N-Channel | 2000pF @ 25V | 25m Ω @ 56A, 10V | 4V @ 250μA | 56A Tc | 130nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTY44N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixty44n10t-datasheets-4025.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 4 | Single | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 47ns | 32 ns | 36 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 130W Tc | TO-252AA | 250 mJ | 100V | N-Channel | 1262pF @ 25V | 30m Ω @ 22A, 10V | 4.5V @ 25μA | 44A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB23N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb23n20dpbf-datasheets-4027.pdf | 200V | 24A | TO-220-3 | 10.54mm | 4.69mm | 4.699mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 100MOhm | 3 | EAR99 | Tin | No | Single | 170W | 1 | FET General Purpose Power | 14 ns | 32ns | 16 ns | 26 ns | 24A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 3.8W Ta 170W Tc | TO-220AB | 96A | 250 mJ | 200V | N-Channel | 1960pF @ 25V | 5.5 V | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STW6N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stw6n90k5-datasheets-3947.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STW6N | 900V | 110W Tc | N-Channel | 1.1 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA110N055T2 | IXYS | $1.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixta110n055t2-datasheets-3951.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 23 ns | 40 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 300A | 0.0066Ohm | 400 mJ | 55V | N-Channel | 3060pF @ 25V | 6.6m Ω @ 25A, 10V | 4V @ 250μA | 110A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TK10A80E,S4X | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 18.1mm | 12 Weeks | 6.000006g | 1 | Single | 50W | 150°C | 80 ns | 40ns | 35 ns | 140 ns | 10A | 30V | 50W Tc | 800V | N-Channel | 2000pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP08N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-spp08n80c3xksa1-datasheets-3956.pdf | TO-220-3 | 3 | 18 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 800V | 800V | 104W Tc | TO-220AB | 8A | 24A | 0.65Ohm | 340 mJ | N-Channel | 1100pF @ 100V | 650m Ω @ 5.1A, 10V | 3.9V @ 470μA | 8A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI630GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi630gpbf-datasheets-3961.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 800pF | 2.5kV | 9.4 ns | 28ns | 20 ns | 39 ns | 5.9A | 20V | 200V | 4V | 35W Tc | 340 ns | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 3.5A, 10V | 4V @ 250μA | 5.9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TPS1101D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-tps1101d-datasheets-0214.pdf | -15V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | TPS1101 | 8 | Single | 791mW | 1 | Other Transistors | -15V | 2.3A | 6.5 ns | 5.5ns | 5.5 ns | 19 ns | -2.3A | 2V | SILICON | ISOLATED | SWITCHING | 791mW Ta | 15V | P-Channel | -1.25 V | 90m Ω @ 2.5A, 10V | 1.5V @ 250μA | 2.3A Ta | 11.25nC @ 10V | 2.7V 10V | +2V, -15V | |||||||||||||||||||||||||||||||||||||||
| IRFB7434PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfb7434pbf-datasheets-3979.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.6MOhm | 3 | EAR99 | No | Single | 294W | 1 | FET General Purpose Power | 24 ns | 68ns | 115 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3V | 294W Tc | TO-220AB | 38 ns | 490 mJ | 40V | N-Channel | 10820pF @ 25V | 3 V | 1.6m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 324nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP114N12N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp114n12n3gxksa1-datasheets-3989.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 136W | 1 | Not Qualified | R-PSFM-T3 | 19 ns | 36ns | 7 ns | 30 ns | 75A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 136W Tc | TO-220AB | 300A | N-Channel | 4310pF @ 60V | 11.4m Ω @ 75A, 10V | 4V @ 83μA | 75A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF8N80C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp8n80c-datasheets-3481.pdf | 800V | 8A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 8 Weeks | 2.27g | No SVHC | 1.55Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 59W | 1 | FET General Purpose Power | 40 ns | 110ns | 70 ns | 65 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 59W Tc | TO-220AB | 8A | 850 mJ | 800V | N-Channel | 2050pF @ 25V | 1.55 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FQP11N40C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fqp11n40c-datasheets-4001.pdf | 400V | 10.5A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 9 Weeks | No SVHC | 530MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 10A | e3 | Tin (Sn) | 400V | NOT SPECIFIED | Single | NOT SPECIFIED | 135W | 1 | FET General Purpose Power | Not Qualified | 14 ns | 89ns | 81 ns | 81 ns | 10.5A | 30V | SILICON | SWITCHING | 4V | 135W Tc | TO-220AB | 400V | N-Channel | 1090pF @ 25V | 530m Ω @ 5.25A, 10V | 4V @ 250μA | 10.5A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFI9620GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi9620gpbf-datasheets-4010.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 30W | 1 | TO-220-3 | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3A | 20V | 200V | 30W Tc | 1.5Ohm | -200V | P-Channel | 340pF @ 15V | 1.5Ohm @ 1.8A, 10V | 4V @ 250μA | 3A Tc | 15nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80R360P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80r360p7xksa1-datasheets-3916.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 84W Tc | TO-220AB | 34A | 0.36Ohm | 34 mJ | N-Channel | 930pF @ 500V | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 13A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF9N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf9n80k5-datasheets-3919.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STF9 | NOT SPECIFIED | 7A | 800V | 25W Tc | N-Channel | 340pF @ 100V | 900m Ω @ 3.5A, 10V | 5V @ 100μA | 7A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19501KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 16 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19501 | 1 | Single | NOT SPECIFIED | 1 | 21 ns | 15ns | 5 ns | 39 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.6V | 217W Tc | 0.0079Ohm | 80V | N-Channel | 3980pF @ 40V | 6.6m Ω @ 60A, 10V | 3.2V @ 250μA | 100A Ta | 50nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFB7534PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7534pbf-datasheets-3931.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 294W | 1 | FET General Purpose Power | 20 ns | 134ns | 93 ns | 118 ns | 195A | 20V | SILICON | ISOLATED | SWITCHING | 60V | 60V | 3.7V | 294W Tc | TO-220AB | 944A | 0.0024Ohm | 775 mJ | N-Channel | 10034pF @ 25V | 2.4m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 279nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPA60R380C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r380c6xksa1-datasheets-3940.pdf | TO-220-3 Full Pack | 3 | 40 Weeks | yes | EAR99 | HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 31W Tc | TO-220AB | 10.6A | 30A | 0.38Ohm | 210 mJ | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP6N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp6n90k5-datasheets-3849.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STP6N | 900V | 110W Tc | N-Channel | 1.1 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI510GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfi510gpbf-datasheets-3853.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | No SVHC | 3 | No | 1 | Single | 27W | 1 | TO-220-3 | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.5A | 20V | 100V | 4V | 27W Tc | 540mOhm | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP110N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp110n8f7-datasheets-3858.pdf | TO-220-3 | Lead Free | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP110 | NOT SPECIFIED | 80A | 80V | 170W Tc | N-Channel | 3435pF @ 40V | 7.5m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 46.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6024KNX | ROHM Semiconductor | $10.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-220-3 Full Pack | 3 | 18 Weeks | No SVHC | 3 | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 5V | 74W Tc | TO-220AB | 72A | 0.165Ohm | 497 mJ | N-Channel | 2000pF @ 25V | 165m Ω @ 11.3A, 10V | 5V @ 1mA | 24A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF16N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFASTmesh™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STF16 | 260mOhm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP029N06NAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp029n06naksa1-datasheets-3876.pdf | TO-220-3 | 3 | 13 Weeks | no | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 3W Ta 136W Tc | TO-220AB | 24A | 400A | 0.0029Ohm | 110 mJ | N-Channel | 4100pF @ 30V | 2.9m Ω @ 100A, 10V | 2.8V @ 75μA | 24A Ta 100A Tc | 56nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK100E06N1,S1X | Toshiba Semiconductor and Storage | $2.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshiba-tk100e06n1s1x-datasheets-0171.pdf | TO-220-3 | 12 Weeks | 100A | 60V | 255W Tc | N-Channel | 10500pF @ 30V | 2.3m Ω @ 50A, 10V | 4V @ 1mA | 100A Ta | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP2552 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp2552-datasheets-3892.pdf | 150V | 37A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | 32MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 150W | 1 | FET General Purpose Power | 12 ns | 29ns | 29 ns | 36 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 5A | 150V | N-Channel | 2800pF @ 25V | 36m Ω @ 16A, 10V | 4V @ 250μA | 5A Ta 37A Tc | 51nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFI644GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi644gpbf-datasheets-3902.pdf | 250V | 7.9A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 11 ns | 24ns | 24 ns | 53 ns | 7.9A | 20V | 250V | 4V | 40W Tc | 500 ns | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 4 V | 280mOhm @ 4.7A, 10V | 4V @ 250μA | 7.9A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V |
