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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQP9N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp9n30-datasheets-2900.pdf | 300V | 9A | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 98W | 1 | FET General Purpose Power | 16 ns | 120ns | 48 ns | 27 ns | 9A | 30V | SILICON | SWITCHING | 98W Tc | TO-220AB | 9A | 0.45Ohm | 420 mJ | 300V | N-Channel | 750pF @ 25V | 450m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FQPF5N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf5n60c-datasheets-2910.pdf&product=onsemiconductor-fqpf5n60c-6843163 | 600V | 4.5A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 33W | 1 | 10 ns | 42ns | 46 ns | 38 ns | 4.5A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 33W Tc | TO-220AB | 600V | N-Channel | 670pF @ 25V | 2.5 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| VN4012L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-vn4012lg-datasheets-2917.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | Tin | No | e3 | BOTTOM | WIRE | 1 | Single | 1W | 1 | FET General Purpose Power | 20 ns | 20ns | 65 ns | 65 ns | 160mA | 20V | SILICON | SWITCHING | 1W Tc | 400V | N-Channel | 110pF @ 25V | 12 Ω @ 100mA, 4.5V | 1.8V @ 1mA | 160mA Tj | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMT10H010LCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmt10h010lct-datasheets-2923.pdf | TO-220-3 | 3 | 19 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 98A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2W Ta 139W Tc | TO-220AB | 62A | 92A | 0.012Ohm | 15 mJ | N-Channel | 3000pF @ 50V | 9.5m Ω @ 13A, 10V | 3V @ 250μA | 98A Tc | 71nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf1010zstrlpbf-datasheets-9374.pdf | 55V | 75A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 7.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | Single | 140W | 1 | FET General Purpose Power | 18 ns | 150ns | 92 ns | 36 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 140W Tc | TO-220AB | 33 ns | 55V | N-Channel | 2840pF @ 25V | 4 V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF30N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf30n06l-datasheets-2837.pdf | 60V | 22.5A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 15 ns | 210ns | 110 ns | 60 ns | 22.5A | 20V | SILICON | ISOLATED | SWITCHING | 38W Tc | 90A | 0.045Ohm | 60V | N-Channel | 1040pF @ 25V | 35m Ω @ 11.3A, 10V | 2.5V @ 250μA | 22.5A Tc | 20nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDP18N20F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp18n20f-datasheets-2851.pdf | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 145MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 50ns | 40 ns | 50 ns | 18A | 30V | SILICON | SWITCHING | 100W Tc | TO-220AB | 72A | 200V | N-Channel | 1180pF @ 25V | 145m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IPS70R1K4P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-ips70r1k4p7sakma1-datasheets-2860.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 700V | 22.7W Tc | N-Channel | 158pF @ 400V | 1.4 Ω @ 700mA, 10V | 3.5V @ 40μA | 4A Tc | 4.7nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP3N100D2 | IXYS | $12.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n100d2-datasheets-2865.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 125W Tc | TO-220AB | N-Channel | 1020pF @ 25V | 5.5 Ω @ 1.5A, 0V | 3A Tc | 37.5nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2460N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn2460n8g-datasheets-3355.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 219.992299mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | BOTTOM | WIRE | 1 | Single | 1W | 1 | FET General Purpose Power | 10 ns | 10ns | 20 ns | 25 ns | 160mA | 20V | SILICON | SWITCHING | 1W Ta | 25Ohm | 25 pF | 600V | N-Channel | 150pF @ 25V | 20 Ω @ 100mA, 10V | 4V @ 2mA | 160mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHP8N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp8n50dge3-datasheets-2874.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | Tin | No | 1 | Single | 156W | 1 | FET General Purpose Powers | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 156W Tc | TO-220AB | 0.85Ohm | 29 mJ | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SPA02N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-spa02n80c3xksa1-datasheets-2774.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 30.5W Tc | TO-220AB | 2A | 6A | 90 mJ | N-Channel | 290pF @ 100V | 2.7 Ω @ 1.2A, 10V | 3.9V @ 120μA | 2A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQP2N90 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp2n90-datasheets-2781.pdf | 900V | 2.2A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 7.2MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 85W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 35ns | 30 ns | 20 ns | 2.2A | 30V | SILICON | SWITCHING | 5V | 85W Tc | TO-220AB | 8.8A | 900V | N-Channel | 500pF @ 25V | 7.2 Ω @ 1.1A, 10V | 5V @ 250μA | 2.2A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TK560A60Y,S4X | Toshiba Semiconductor and Storage | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 600V | 30W | N-Channel | 380pF @ 300V | 560mOhm @ 3.5A, 10V | 4V @ 240μA | 7A Tc | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ34NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfiz34npbf-datasheets-2795.pdf | 60V | 20A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 31W | 1 | 2.5kV | 7 ns | 49ns | 40 ns | 31 ns | 21A | 20V | 55V | SILICON | ISOLATED | SWITCHING | 4V | 37W Tc | TO-220AB | 86 ns | 0.04Ohm | 55V | N-Channel | 700pF @ 25V | 20 V | 40m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPA80R1K4P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipa80r1k4p7xksa1-datasheets-2805.pdf | TO-220-3 Full Pack | 18 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 4A | 800V | 24W Tc | N-Channel | 250pF @ 500V | 1.4 Ω @ 1.4A, 10V | 3.5V @ 700μA | 4A Tc | 10nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF770N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf770n15a-datasheets-2811.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 8 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 20W | 1 | FET General Purpose Power | 12 ns | 8ns | 3 ns | 15 ns | 10A | 20V | SILICON | ISOLATED | SWITCHING | 21W Tc | TO-220AB | 40A | 0.077Ohm | 150V | N-Channel | 765pF @ 75V | 77m Ω @ 10A, 10V | 4V @ 250μA | 10A Tc | 11.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFU9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | -5.3A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8 Weeks | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Other Transistors | 6.1 ns | 47ns | 35 ns | 13 ns | 5.3A | SILICON | DRAIN | SWITCHING | 25W Tc | 21A | 50V | P-Channel | 240pF @ 25V | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TN0620N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0620n3gp002-datasheets-7890.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 219.992299mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 10 ns | 8ns | 20 ns | 20 ns | 250mA | 20V | SILICON | SWITCHING | 1W Tc | 0.25A | 6Ohm | 200V | N-Channel | 150pF @ 25V | 6 Ω @ 500mA, 10V | 1.6V @ 1mA | 250mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPAW60R380CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipaw60r380cexksa1-datasheets-2828.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 3V | 31W Tc | TO-220AB | 210 mJ | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 15A Tc | 32nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TN2640N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2640k4g-datasheets-3840.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 2 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | FET General Purpose Power | 4 ns | 15ns | 22 ns | 20 ns | 220mA | 20V | SILICON | SWITCHING | 740mW Ta | 0.22A | 5Ohm | 400V | N-Channel | 225pF @ 25V | 5 Ω @ 500mA, 10V | 2V @ 2mA | 220mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA50R380CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r380cexksa2-datasheets-2729.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 11 ns | 9ns | 8 ns | 56 ns | 6.3A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 29.2W Tc | TO-220AB | 210 mJ | N-Channel | 584pF @ 100V | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 6.3A Tc | 24.8nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP093N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp093n06n3gxksa1-datasheets-2742.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 71W | 1 | Not Qualified | 15 ns | 40ns | 5 ns | 20 ns | 50A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 71W Tc | TO-220AB | 200A | N-Channel | 2900pF @ 30V | 9.3m Ω @ 50A, 10V | 4V @ 34μA | 50A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN110N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfn110n85x-datasheets-2749.pdf | SOT-227-4, miniBLOC | 19 Weeks | yes | unknown | 850V | 1170W Tc | N-Channel | 17000pF @ 25V | 33m Ω @ 55A, 10V | 5.5V @ 8mA | 110A Tc | 425nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP6030BL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fdp6030bl-datasheets-2759.pdf | 30V | 40A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 10 Weeks | 1.8g | 18MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 60W | 1 | FET General Purpose Power | 9 ns | 11ns | 8 ns | 23 ns | 40A | 20V | SILICON | SWITCHING | 60W Tc | TO-220AB | 30V | N-Channel | 1160pF @ 15V | 18m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 17nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQPF5N50CYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqpf5n50cydtu-datasheets-2768.pdf | 500V | 5A | TO-220-3 Full Pack, Formed Leads | 10.16mm | 15.87mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 12 ns | 46ns | 48 ns | 50 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 38W Tc | TO-220AB | 5A | 20A | 500V | N-Channel | 625pF @ 25V | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TN2540N3-G | Microchip Technology | $7.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn2540n8g-datasheets-9473.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 2 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | FET General Purpose Power | 20 ns | 15ns | 20 ns | 25 ns | 175mA | 20V | SILICON | SWITCHING | 1W Ta | 25 pF | 400V | N-Channel | 125pF @ 25V | 12 Ω @ 500mA, 10V | 2V @ 1mA | 175mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AOT8N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot8n50-datasheets-9473.pdf | TO-220-3 | 18 Weeks | No | 192W | 1 | FET General Purpose Power | 8A | Single | 500V | 192W Tc | 8A | N-Channel | 1042pF @ 25V | 850m Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdp8n50nz-datasheets-2661.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | 3 | 6 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 34ns | 27 ns | 43 ns | 8A | 25V | SILICON | SWITCHING | 500V | 500V | 130W Tc | TO-220AB | 8A | 0.85Ohm | N-Channel | 735pF @ 25V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 18nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IPP057N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp057n06n3gxksa1-datasheets-2671.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 115W | 1 | FET General Purpose Power | Not Qualified | 24 ns | 68ns | 9 ns | 32 ns | 80A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 115W Tc | TO-220AB | 0.0057Ohm | 77 mJ | N-Channel | 6600pF @ 30V | 5.7m Ω @ 80A, 10V | 4V @ 58μA | 80A Tc | 82nC @ 10V | 10V | ±20V |
