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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPS1100D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-tps1100d-datasheets-9814.pdf | -15V | -1.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | No SVHC | 180mOhm | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | TPS1100 | 8 | 791mW | 1 | Other Transistors | 1.6A | -15V | 4.5 ns | 10ns | 10 ns | 13 ns | -1.6A | 2V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 15V | 791mW Ta | -15V | P-Channel | -1.25 V | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 1.6A Ta | 5.45nC @ 10V | 2.7V 10V | +2V, -15V | |||||||||||||||||||||||||||||||||||
| FQP14N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp14n30-datasheets-3305.pdf | 300V | 14.4A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 11 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 147W | 1 | FET General Purpose Power | Not Qualified | 22 ns | 145ns | 70 ns | 45 ns | 14.4A | 30V | SILICON | SWITCHING | 147W Tc | TO-220AB | 57.6A | 0.29Ohm | 600 mJ | 300V | N-Channel | 1360pF @ 25V | 290m Ω @ 7.2A, 10V | 5V @ 250μA | 14.4A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPA80R900P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa80r900p7xksa1-datasheets-3315.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 26W Tc | TO-220AB | 14A | 0.9Ohm | 13 mJ | N-Channel | 350pF @ 500V | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 6A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP083N10N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp083n10n5aksa1-datasheets-3236.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 13 ns | 5ns | 5 ns | 21 ns | 73A | 20V | 100V | SILICON | DRAIN | SWITCHING | 100W Tc | TO-220AB | 292A | 0.0083Ohm | 42 mJ | 100V | N-Channel | 2730pF @ 50V | 8.3m Ω @ 73A, 10V | 3.8V @ 49μA | 73A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP3NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp3nk90zfp-datasheets-7316.pdf | 900V | 3A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 4.8Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP3N | 3 | Single | 90W | 1 | FET General Purpose Power | 18 ns | 7ns | 18 ns | 45 ns | 3A | 30V | SILICON | SWITCHING | 3.75V | 90W Tc | TO-220AB | 3A | 900V | N-Channel | 590pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 22.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| RCX160N20 | ROHM Semiconductor | $4.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 64A | 0.18Ohm | 20.7 mJ | N-Channel | 1370pF @ 25V | 180m Ω @ 8A, 10V | 5.25V @ 1mA | 16A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80R600P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80r600p7xksa1-datasheets-3259.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 60W Tc | TO-220AB | 22A | 0.6Ohm | 20 mJ | N-Channel | 570pF @ 500V | 600m Ω @ 3.4A, 10V | 3.5V @ 170μA | 8A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z14SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z14spbf-datasheets-3262.pdf | -60V | -6.7A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 500mOhm | 3 | 1 | Single | 3.7W | 1 | D2PAK | 270pF | 11 ns | 63ns | 31 ns | 10 ns | -6.7A | 20V | 60V | 60V | 3.7W Ta 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | -4 V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF610SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 200V | 4V | 3W Ta 36W Tc | 1.5Ohm | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R600P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r600p7xksa1-datasheets-3271.pdf | TO-220-3 | 18 Weeks | PG-TO220-3 | 650V | 30W Tc | 490mOhm | N-Channel | 363pF @ 400V | 600mOhm @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2406L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-vn2406lg-datasheets-3274.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) - annealed | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 8 ns | 8ns | 24 ns | 23 ns | 190mA | 20V | SILICON | SWITCHING | 1W Tc | 6Ohm | 20 pF | 240V | N-Channel | 125pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 190mA Tj | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOTF296L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-220-3 Full Pack | 3 | 18 Weeks | yes | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 41A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.2W Ta 36.5W Tc | TO-220AB | 160A | 0.0125Ohm | 80 mJ | N-Channel | 2785pF @ 50V | 10m Ω @ 20A, 10V | 3.4V @ 250μA | 10A Ta 41A Tc | 52nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2450N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/microchiptechnology-vp2450n8g-datasheets-8632.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | Single | 1W | 1 | 10 ns | 25ns | 25 ns | 45 ns | 100mA | 20V | SILICON | SWITCHING | 500V | 740mW Ta | 20 pF | -500V | P-Channel | 190pF @ 25V | 30 Ω @ 100mA, 10V | 3.5V @ 1mA | 100mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N03S4L03AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipp80n03s4l03aksa1-datasheets-3199.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 9ns | 13 ns | 62 ns | 80A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 136W Tc | TO-220AB | 0.0027Ohm | 260 mJ | N-Channel | 9750pF @ 25V | 2.7m Ω @ 80A, 10V | 2.2V @ 90μA | 80A Tc | 140nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK7A90E,S4X | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 1 | Single | TO-220SIS | 1.35nF | 55 ns | 20ns | 15 ns | 85 ns | 7A | 30V | 900V | 45W Tc | 1.6Ohm | N-Channel | 1350pF @ 25V | 2Ohm @ 3.5A, 10V | 4V @ 700μA | 7A Ta | 32nC @ 10V | 2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z24pbf-datasheets-3208.pdf | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 60W | 1 | 175°C | TO-220AB | 570pF | 13 ns | 68ns | 29 ns | 15 ns | 11A | 20V | 60V | -4V | 60W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | -4 V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TK8R2A06PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 Full Pack | 12 Weeks | TO-220SIS | 60V | 36W Tc | N-Channel | 1990pF @ 25V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300μA | 50A Tc | 28.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3110ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2.5V | 140W Tc | 250A | 100V | N-Channel | 3980pF @ 25V | 2.5 V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| AOT7S65L | Alpha & Omega Semiconductor Inc. | $7.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | FET General Purpose Power | 7A | Single | 650V | 104W Tc | 7A | N-Channel | 434pF @ 100V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK380A60Y,S4X | Toshiba Semiconductor and Storage | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 600V | 30W | N-Channel | 590pF @ 300V | 380mOhm @ 4.9A, 10V | 4V @ 360μA | 9.7A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17577Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 800μm | AVALANCHE RATED | Tin | e3 | DUAL | FLAT | 260 | CSD17577 | 1 | Single | NOT SPECIFIED | 2.8W | 1 | 4 ns | 31ns | 4 ns | 20 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.4V | 2.8W Ta 53W Tc | 239A | 39 mJ | N-Channel | 2310pF @ 15V | 4.8m Ω @ 16A, 10V | 1.8V @ 250μA | 35A Ta | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF530SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.946308g | Unknown | 160mOhm | 3 | Tin | No | 1 | Single | 3.7W | 1 | TO-263 (D2Pak) | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 4V | 3.7W Ta 88W Tc | 160mOhm | N-Channel | 670pF @ 25V | 4 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDPF10N50FT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf10n50ft-datasheets-3162.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 125W | 1 | FET General Purpose Power | 20 ns | 40ns | 30 ns | 45 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 9A | 0.85Ohm | 500V | N-Channel | 1170pF @ 25V | 850m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R600E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r600e6xksa1-datasheets-3167.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 28W | 1 | Not Qualified | 10 ns | 8ns | 11 ns | 64 ns | 7.3A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 0.6Ohm | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQP70N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp70n10-datasheets-3173.pdf | 100V | 57A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 15 Weeks | 1.8g | No SVHC | 23MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 470ns | 160 ns | 130 ns | 57A | 25V | SILICON | SWITCHING | 4V | 160W Tc | TO-220AB | 228A | 100V | N-Channel | 3300pF @ 25V | 23m Ω @ 28.5A, 10V | 4V @ 250μA | 57A Tc | 110nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IRFB4510PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4510pbf-datasheets-3182.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 140W | 1 | FET General Purpose Power | 13 ns | 32ns | 28 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 100V | 2V | 140W Tc | TO-220AB | 250A | N-Channel | 3180pF @ 50V | 2 V | 13.5m Ω @ 37A, 10V | 4V @ 100μA | 62A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PHP33NQ20T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-php33nq20t127-datasheets-3191.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 230W | 1 | 12 ns | 35ns | 45 ns | 43 ns | 32.7A | 20V | 200V | SILICON | DRAIN | SWITCHING | 230W Tc | 65.4A | 0.077Ohm | 190 mJ | 200V | N-Channel | 1870pF @ 25V | 77m Ω @ 15A, 10V | 4V @ 1mA | 32.7A Tc | 32.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF4N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stf4n90k5-datasheets-3195.pdf | TO-220-3 | 17 Weeks | NOT SPECIFIED | STF4N | NOT SPECIFIED | 900V | 20W Tc | N-Channel | 173pF @ 100V | 2.1 Ω @ 1A, 10V | 5V @ 100μA | 4A Tc | 5.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA70R900P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa70r900p7sxksa1-datasheets-3107.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 20.5W Tc | TO-220AB | 12.8A | 0.9Ohm | N-Channel | 211pF @ 400V | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 6A Tc | 6.8nC @ 400V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT414 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 | 16 Weeks | 43A | 100V | 1.9W Ta 115W Tc | N-Channel | 2200pF @ 50V | 25m Ω @ 20A, 10V | 4V @ 250μA | 5.6A Ta 43A Tc | 34nC @ 10V | 7V 10V | ±25V |
