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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP100N04T2 | IXYS | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp100n04t2-datasheets-3449.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5.2ns | 6.4 ns | 15.8 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 300A | 0.007Ohm | 300 mJ | 40V | N-Channel | 2690pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 100A Tc | 25.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQPF2N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp2n60c-datasheets-8233.pdf | 600V | 2A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 4.7Ohm | 3 | ACTIVE (Last Updated: 9 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 23W | 1 | FET General Purpose Power | 9 ns | 25ns | 28 ns | 24 ns | 2A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 23W Tc | TO-220AB | 2A | 8A | 600V | N-Channel | 235pF @ 25V | 4.7 Ω @ 1A, 10V | 4V @ 250μA | 2A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPP50R280CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r280cexksa1-datasheets-3458.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 8 ns | 6.4ns | 7.6 ns | 40 ns | 13A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 92W Tc | TO-220AB | 42.9A | 0.28Ohm | N-Channel | 773pF @ 100V | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 13A Tc | 32.6nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN9R5-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn9r5100ps127-datasheets-3464.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 211W | 1 | 22 ns | 25.2ns | 22.8 ns | 52.2 ns | 89A | 20V | 100V | SILICON | DRAIN | SWITCHING | 211W Tc | TO-220AB | 0.0096Ohm | 100V | N-Channel | 4454pF @ 50V | 9.6m Ω @ 15A, 10V | 4V @ 1mA | 89A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP45N15V2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp45n15v2-datasheets-3471.pdf&product=onsemiconductor-fqp45n15v2-6843259 | 150V | 45A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | No SVHC | 40mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 45A | e3 | Tin (Sn) | 150V | NOT SPECIFIED | Single | NOT SPECIFIED | 220W | 1 | FET General Purpose Power | Not Qualified | 22 ns | 232ns | 246 ns | 224 ns | 45A | 30V | 150V | SILICON | SWITCHING | 4V | 220W Tc | TO-220AB | 150V | N-Channel | 3030pF @ 25V | 4 V | 40m Ω @ 22.5A, 10V | 4V @ 250μA | 45A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF540SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 77mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK (TO-263) | 1.7nF | 11 ns | 44ns | 43 ns | 53 ns | 28A | 20V | 100V | 4V | 3.7W Ta 150W Tc | 77mOhm | 100V | N-Channel | 1700pF @ 25V | 4 V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA70R360P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa70r360p7sxksa1-datasheets-3399.pdf | TO-220-3 Full Pack | 18 Weeks | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 700V | 26.4W Tc | N-Channel | 517pF @ 400V | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 12.5A Tc | 16.4nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP4N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf4n90c-datasheets-8750.pdf | 900V | 4A | TO-220-3 | 9.9mm | 9.2mm | 4.5mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 50ns | 35 ns | 40 ns | 4A | 30V | SILICON | SWITCHING | 5V | 140W Tc | TO-220AB | 4A | 570 mJ | 900V | N-Channel | 960pF @ 25V | 4.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRLIZ14GPBF | Vishay Siliconix | $5.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz14gpbf-datasheets-3414.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 200mOhm | 3 | No | 1 | Single | 27W | 1 | TO-220-3 | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 8A | 10V | 60V | 27W Tc | 200mOhm | N-Channel | 400pF @ 25V | 2 V | 200mOhm @ 4.8A, 5V | 2V @ 250μA | 8A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI029N06NAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi029n06naksa1-datasheets-3419.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 136W | 1 | R-PSIP-T3 | 15ns | 8 ns | 30 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3W Ta 136W Tc | 24A | 400A | 0.0029Ohm | 60V | N-Channel | 4100pF @ 30V | 2.9m Ω @ 100A, 10V | 2.8V @ 75μA | 24A Ta 100A Tc | 56nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP12CN10LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp12cn10lgxksa1-datasheets-3425.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | LOGIC LEVL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 125W | 1 | Not Qualified | 14 ns | 9ns | 5 ns | 39 ns | 69A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 125W Tc | TO-220AB | 276A | N-Channel | 5600pF @ 50V | 12m Ω @ 69A, 10V | 2.4V @ 83μA | 69A Tc | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP150MPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfp150mpbf-datasheets-3431.pdf | TO-247-3 | 16.129mm | 21.1mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 36MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 160W | 1 | FET General Purpose Power | 11 ns | 56ns | 40 ns | 45 ns | 42A | 20V | SILICON | SWITCHING | 4V | 160W Tc | TO-247AC | 140A | 420 mJ | 100V | N-Channel | 1900pF @ 25V | 4 V | 36m Ω @ 23A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STU6N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu6n90k5-datasheets-3439.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STU6N | 900V | 110W Tc | N-Channel | 1.1 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT14N50 | Alpha & Omega Semiconductor Inc. | $5.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 278W | 1 | FET General Purpose Power | 14A | 30V | Single | 500V | 278W Tc | N-Channel | 2297pF @ 25V | 380m Ω @ 7A, 10V | 4.5V @ 250μA | 14A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI620GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi620gpbf-datasheets-3357.pdf | 200V | 4.1A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | No SVHC | 800mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | 3 | 1 | Single | 30W | 1 | 2.5kV | 7.2 ns | 22ns | 13 ns | 19 ns | 4.1A | 20V | 200V | SILICON | SWITCHING | 4V | 30W Tc | TO-220AB | 300 ns | 200V | N-Channel | 260pF @ 25V | 4 V | 800m Ω @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PHP28NQ15T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-php28nq15t127-datasheets-3362.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 150W | 1 | 12 ns | 20ns | 55 ns | 12 ns | 28.5A | 20V | 150V | SILICON | DRAIN | SWITCHING | 150W Tc | 57.1A | 0.065Ohm | 100 mJ | 150V | N-Channel | 1250pF @ 30V | 65m Ω @ 18A, 10V | 4V @ 1mA | 28.5A Tj | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N50D2 | IXYS | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty08n50d2-datasheets-2799.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | yes | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 800mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 60W Tc | TO-263AA | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 800mA Tc | 12.7nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF8N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf8n50nz-datasheets-3370.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | Lead Free | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 40.3W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 34ns | 27 ns | 43 ns | 8A | 25V | SILICON | ISOLATED | SWITCHING | 40.3W Tc | TO-220AB | 8A | 0.85Ohm | 500V | N-Channel | 735pF @ 25V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 18nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| IRFIZ24GPBF | Vishay Siliconix | $1.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfiz24gpbf-datasheets-3379.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 100MOhm | 3 | No | 1 | Single | 37W | 1 | TO-220-3 | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | 60V | 60V | 4V | 37W Tc | 100mOhm | N-Channel | 640pF @ 25V | 4 V | 100mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD18532NQ5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | 950μm | CSD18532 | Single | 8-VSON-CLIP (5x6) | 5.34nF | 100A | 60V | 2.8V | 3.1W Ta 156W Tc | 2.7mOhm | N-Channel | 5340pF @ 30V | 3.4mOhm @ 25A, 10V | 3.4V @ 250μA | 100A Ta | 64nC @ 10V | 3.4 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP6412ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntp6412ang-datasheets-3391.pdf | TO-220-3 | 10.28mm | 15.75mm | 4.82mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 18.2MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | Tin | No | e3 | NO | 3 | Single | 167W | 1 | FET General Purpose Power | 16 ns | 140ns | 126 ns | 70 ns | 58A | 20V | SILICON | DRAIN | 4V | 167W Tc | TO-220AB | 240A | 100V | N-Channel | 3500pF @ 25V | 4 V | 18.2m Ω @ 58A, 10V | 4V @ 250μA | 58A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STI6N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti6n90k5-datasheets-3395.pdf | TO-262-3 Full Pack, I2Pak | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STI6N | 900V | 110W Tc | N-Channel | 1.1 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2540N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp2540n8g-datasheets-0375.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | Other Transistors | 10 ns | 10ns | 10 ns | 20 ns | 86mA | 20V | SILICON | SWITCHING | 400V | 740mW Ta | 0.086A | 25 pF | -400V | P-Channel | 125pF @ 25V | 25 Ω @ 100mA, 10V | 2.4V @ 1mA | 86mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R360P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipp60r360p7xksa1-datasheets-3323.pdf | TO-220-3 | 3 | 18 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 41W Tc | TO-220AB | 26A | 0.36Ohm | 27 mJ | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630SPBF | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630spbf-datasheets-3326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 400MOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK (TO-263) | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 4V | 3W Ta 74W Tc | 400mOhm | N-Channel | 800pF @ 25V | 4 V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| ZVP0545A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp0545a-datasheets-3335.pdf&product=diodesincorporated-zvp0545a-6843234 | -450V | -45mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 150Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Other Transistors | 10 ns | 15ns | 15 ns | 15 ns | 45mA | 20V | SILICON | SWITCHING | 450V | -3V | 700mW Ta | 0.045A | 5 pF | P-Channel | 120pF @ 25V | 150 Ω @ 50mA, 10V | 4.5V @ 1mA | 45mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP086N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi086n10n3gxksa1-datasheets-9282.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 125W | 1 | R-PSFM-T3 | 18 ns | 42ns | 8 ns | 31 ns | 80A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 125W Tc | TO-220AB | 320A | 0.0086Ohm | N-Channel | 3980pF @ 50V | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF5N50T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf5n50t-datasheets-3346.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 7 Weeks | 2.27g | 1.4Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 28W | 1 | FET General Purpose Power | 13 ns | 22ns | 20 ns | 28 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 5A | 20A | 225 mJ | 500V | N-Channel | 640pF @ 25V | 1.4 Ω @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRF610SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 200V | 4V | 3W Ta 36W Tc | 1.5Ohm | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R600P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r600p7xksa1-datasheets-3271.pdf | TO-220-3 | 18 Weeks | PG-TO220-3 | 650V | 30W Tc | 490mOhm | N-Channel | 363pF @ 400V | 600mOhm @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V |
