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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF9540NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf9540nlpbf-datasheets-3671.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 117mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | Single | 30 | 3.1W | 1 | Other Transistors | 13 ns | 67ns | 51 ns | 40 ns | -23A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.1W Ta 110W Tc | 92A | 84 mJ | -100V | P-Channel | 1450pF @ 25V | 4 V | 117m Ω @ 14A, 10V | 4V @ 250μA | 23A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FCP650N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp650n80z-datasheets-3574.pdf | TO-220-3 | 14 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | Single | NOT SPECIFIED | 10A | 800V | 4.5V | 162W Tc | N-Channel | 1565pF @ 100V | 650m Ω @ 4A, 10V | 4.5V @ 800μA | 10A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK72A08N1,S4X | Toshiba Semiconductor and Storage | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 5.5nF | 42 ns | 19ns | 28 ns | 93 ns | 72A | 20V | 75V | 45W Tc | 3.7mOhm | 80V | N-Channel | 8200pF @ 10V | 4.5mOhm @ 40A, 10V | 4V @ 1mA | 80A Ta | 175nC @ 10V | 4.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP60N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp60n10t-datasheets-3593.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 18MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 176W | 1 | FET General Purpose Power | Not Qualified | 40ns | 37 ns | 43 ns | 60A | SILICON | DRAIN | SWITCHING | 176W Tc | TO-220AB | 500 mJ | 100V | N-Channel | 2650pF @ 25V | 18m Ω @ 25A, 10V | 4.5V @ 50μA | 60A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FQPF65N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqpf65n06-datasheets-3595.pdf | 60V | 40A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 56W | 1 | FET General Purpose Power | 20 ns | 160ns | 105 ns | 90 ns | 40A | 25V | 60V | SILICON | ISOLATED | SWITCHING | 4V | 56W Tc | 645 mJ | 60V | N-Channel | 2410pF @ 25V | 4 V | 16m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 65nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IPA057N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa057n08n3gxksa1-datasheets-3601.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 39W | 1 | Not Qualified | 17 ns | 42ns | 9 ns | 36 ns | 60A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 240A | 0.0057Ohm | 290 mJ | N-Channel | 4750pF @ 40V | 5.7m Ω @ 60A, 10V | 3.5V @ 90μA | 60A Tc | 69nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA083N10N5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa083n10n5xksa1-datasheets-3607.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 6.000006g | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 15 ns | 5ns | 5 ns | 24 ns | 44A | 20V | 100V | SILICON | ISOLATED | SWITCHING | 36W Tc | TO-220AB | 0.0083Ohm | 70 mJ | 100V | N-Channel | 2730pF @ 50V | 8.3m Ω @ 44A, 10V | 3.8V @ 49μA | 44A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP60R280CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipp60r280cfd7xksa1-datasheets-3613.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 52W Tc | TO-220AB | 9A | 31A | 0.28Ohm | 36 mJ | N-Channel | 807pF @ 400V | 280m Ω @ 3.6A, 10V | 4.5V @ 180μA | 9A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP15N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp15n60m2ep-datasheets-3629.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | STP15N | 11A | 600V | 110W Tc | N-Channel | 590pF @ 100V | 378m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI18N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp18n65m2-datasheets-2139.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | STI18N | Single | I2PAK | 770pF | 11 ns | 46 ns | 12A | 25V | 650V | 110W Tc | 330mOhm | N-Channel | 770pF @ 100V | 330mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 20nC @ 10V | 330 mΩ | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40apbf-datasheets-3638.pdf | 600V | 6.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.2Ohm | 3 | No | 62A | 600V | 1 | Single | 125W | 1 | TO-220AB | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 4V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPP032N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp032n06n3gxksa1-datasheets-3646.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3 | Single | 188W | 1 | 35 ns | 120ns | 20 ns | 62 ns | 120A | 20V | 60V | SILICON | SWITCHING | 188W Tc | TO-220AB | 480A | 60V | N-Channel | 13000pF @ 30V | 3.2m Ω @ 100A, 10V | 4V @ 118μA | 120A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N80C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqpf6n80c-datasheets-3653.pdf | 800V | 5.5A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 2.5Ohm | 3 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 51W | 1 | FET General Purpose Power | 26 ns | 65ns | 44 ns | 47 ns | 5.5A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 51W Tc | TO-220AB | 22A | 680 mJ | 800V | N-Channel | 1310pF @ 25V | 2.5 Ω @ 2.75A, 10V | 5V @ 250μA | 5.5A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPP040N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp040n06n3gxksa1-datasheets-3660.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 70ns | 5 ns | 40 ns | 90A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 188W Tc | TO-220AB | 0.004Ohm | 165 mJ | N-Channel | 11000pF @ 30V | 4m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLI530GPBF | Vishay Siliconix | $3.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli530gpbf-datasheets-3553.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 9.7A | 10V | 100V | 42W Tc | 160mOhm | N-Channel | 930pF @ 25V | 160mOhm @ 5.8A, 5V | 2V @ 250μA | 9.7A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB59N10DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb59n10dpbf-datasheets-3558.pdf | 100V | 59A | TO-220-3 | 8.763mm | 4.69mm | Lead Free | 3 | 14 Weeks | No SVHC | 25mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 250 | 30 | 200W | 1 | FET General Purpose Power | 16 ns | 90ns | 12 ns | 20 ns | 59A | 30V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.5V | 3.8W Ta 200W Tc | TO-220AB | 100V | N-Channel | 2450pF @ 25V | 5.5 V | 25m Ω @ 35.4A, 10V | 5.5V @ 250μA | 59A Tc | 114nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SPA07N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa07n60c3xksa1-datasheets-3567.pdf | TO-220-3 Full Pack | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 32W Tc | TO-220AB | 7.3A | 21.9A | 0.6Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 250μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDPF085N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf085n10a-datasheets-3486.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 8 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Single | 33.3W | 1 | FET General Purpose Power | 18 ns | 22ns | 8 ns | 29 ns | 40A | 20V | SILICON | ISOLATED | SWITCHING | 33.3W Tc | TO-220AB | 0.0085Ohm | 269 mJ | 100V | N-Channel | 2695pF @ 50V | 8.5m Ω @ 40A, 10V | 4V @ 250μA | 40A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTP24P085T | IXYS | $2.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp24p085t-datasheets-3497.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 83W Tc | TO-220AB | 80A | 0.065Ohm | 200 mJ | P-Channel | 2090pF @ 25V | 65m Ω @ 12A, 10V | 4.5V @ 250μA | 24A Tc | 41nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| IPA60R280P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r280p6xksa1-datasheets-3499.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 6.000006g | 3 | Halogen Free | 1 | 32W | 1 | PG-TO220-FP | 1.19nF | 12 ns | 6ns | 6 ns | 36 ns | 13.8A | 20V | 600V | 600V | 32W Tc | 252mOhm | N-Channel | 1190pF @ 100V | 280mOhm @ 5.2A, 10V | 4.5V @ 430μA | 13.8A Tc | 25.5nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF11N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf11n60f-datasheets-3505.pdf | 600V | 11A | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 125W | 1 | FET General Purpose Power | 34 ns | 98ns | 56 ns | 119 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 36W Tc | TO-220AB | 600V | N-Channel | 1490pF @ 25V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FDP75N08A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdp75n08a-datasheets-3511.pdf | 75V | 75A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 5 Weeks | No SVHC | 11MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FAST SWITCHING | 75A | e3 | Tin (Sn) | 75V | NOT SPECIFIED | Single | NOT SPECIFIED | 137W | 1 | FET General Purpose Power | Not Qualified | 43 ns | 212ns | 147 ns | 273 ns | 75A | 20V | SILICON | SWITCHING | 4V | 137W Tc | TO-220AB | 75V | N-Channel | 4468pF @ 25V | 11m Ω @ 37.5A, 10V | 4V @ 250μA | 75A Tc | 104nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STP40NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp40nf10-datasheets-3521.pdf | 100V | 50A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 33mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP40N | 3 | Single | 150W | 1 | FET General Purpose Power | 21 ns | 63ns | 28 ns | 54 ns | 50A | 20V | SILICON | SWITCHING | 3V | 150W Tc | TO-220AB | 40A | 200A | 100V | N-Channel | 2180pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 62nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPAW60R190CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipaw60r190cexksa1-datasheets-3527.pdf | TO-220-3 Full Pack | 18 Weeks | No SVHC | 3 | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 26.7A | 600V | 3V | 34W Tc | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 26.7A Tc | 63nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP6N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp6n90c-datasheets-3531.pdf | 900V | 6A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 2.3Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 167W | 1 | FET General Purpose Power | 35 ns | 90ns | 60 ns | 55 ns | 6A | 30V | 900V | SILICON | SWITCHING | 5V | 167W Tc | TO-220AB | 6A | 24A | 650 mJ | 900V | N-Channel | 1770pF @ 25V | 5 V | 2.3 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTA24P085T | IXYS | $2.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp24p085t-datasheets-3497.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 83W Tc | 80A | 0.065Ohm | 200 mJ | P-Channel | 2090pF @ 25V | 65m Ω @ 12A, 10V | 4.5V @ 250μA | 24A Tc | 41nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| IRFI530GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfi530gpbf-datasheets-3544.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 670pF | 8.5 ns | 28ns | 25 ns | 34 ns | 9.7A | 20V | 100V | 42W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 160mOhm @ 5.8A, 10V | 4V @ 250μA | 9.7A Tc | 33nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL540SPBF | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl540spbf-datasheets-3549.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 77mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 2.2nF | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | 100V | 2V | 3.7W Ta 150W Tc | 77mOhm | 100V | N-Channel | 2200pF @ 25V | 77mOhm @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 77 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| FQPF2N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp2n60c-datasheets-8233.pdf | 600V | 2A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 4.7Ohm | 3 | ACTIVE (Last Updated: 9 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 23W | 1 | FET General Purpose Power | 9 ns | 25ns | 28 ns | 24 ns | 2A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 23W Tc | TO-220AB | 2A | 8A | 600V | N-Channel | 235pF @ 25V | 4.7 Ω @ 1A, 10V | 4V @ 250μA | 2A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPP50R280CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r280cexksa1-datasheets-3458.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 8 ns | 6.4ns | 7.6 ns | 40 ns | 13A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 92W Tc | TO-220AB | 42.9A | 0.28Ohm | N-Channel | 773pF @ 100V | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 13A Tc | 32.6nC @ 10V | Super Junction | 13V | ±20V |
