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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPAN50R500CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipan50r500cexksa1-datasheets-2515.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 11.1A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 28W Tc | TO-220AB | 24A | 0.5Ohm | 129 mJ | N-Channel | 433pF @ 100V | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 11.1A Tc | 18.7nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT53F80J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt53f80j-datasheets-2523.pdf | 800V | 53A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 33 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 960W | 1 | 100 ns | 145ns | 125 ns | 435 ns | 57A | 30V | SILICON | ISOLATED | SWITCHING | 960W Tc | 325A | 3725 mJ | N-Channel | 17550pF @ 25V | 110m Ω @ 43A, 10V | 5V @ 5mA | 57A Tc | 570nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFR110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irfr110trpbf-datasheets-0113.pdf | 100V | 4.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 25W | 1 | R-PSSO-G2 | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 25W Tc | TO-252AA | 200 ns | 75 mJ | 100V | N-Channel | 180pF @ 25V | 4 V | 540m Ω @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK30A06N1,S4X | Toshiba Semiconductor and Storage | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 21 ns | 7.3ns | 7.3 ns | 28 ns | 30A | 20V | 25W Tc | 60V | N-Channel | 1050pF @ 30V | 15m Ω @ 15A, 10V | 4V @ 200μA | 30A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | -60V | -5.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 500mOhm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 270pF | 11 ns | 63ns | 31 ns | 9.6 ns | -5.1A | 20V | 60V | -4V | 2.5W Ta 25W Tc | 160 ns | 500mOhm | -60V | P-Channel | 270pF @ 25V | 500mOhm @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA70R750P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa70r750p7sxksa1-datasheets-2464.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 21.2W Tc | TO-220AB | 15.4A | 0.75Ohm | N-Channel | 306pF @ 400V | 750m Ω @ 1.4A, 10V | 3.5V @ 70μA | 6.5A Tc | 8.3nC @ 400V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0110N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/microchiptechnology-tn0110n3g-datasheets-2467.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 2 ns | 3ns | 3 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 1W Tc | 3Ohm | 8 pF | 100V | N-Channel | 60pF @ 25V | 3 Ω @ 500mA, 10V | 2V @ 500μA | 350mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 200mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | R-PSSO-G2 | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 25W Tc | 27.4 mJ | 60V | N-Channel | 400pF @ 25V | 2 V | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||
| IPA70R600P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa70r600p7sxksa1-datasheets-2477.pdf | TO-220-3 Full Pack | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 700V | 25W Tc | N-Channel | 364pF @ 400V | 600m Ω @ 1.8A, 10V | 3.5V @ 90μA | 8.5A Tc | 10.5nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH02N250 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixth02n250-datasheets-2386.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 200mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2500V | 2500V | 83W Tc | 0.2A | 0.5A | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK400N15X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfk400n15x3-datasheets-2388.pdf | TO-264-3, TO-264AA | 19 Weeks | compliant | 150V | 1250W Tc | N-Channel | 23.7nF @ 25V | 3m Ω @ 200A, 10V | 4.5V @ 8mA | 400A Tc | 365nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK240N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx240n25x3-datasheets-2256.pdf | TO-264-3, TO-264AA | 19 Weeks | 250V | 1250W Tc | N-Channel | 23800pF @ 25V | 5m Ω @ 120A, 10V | 4.5V @ 8mA | 240A Tc | 345nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT20S60L | Alpha & Omega Semiconductor Inc. | $1.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | Lead Free | 3 | 16 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 266W Tc | TO-220AB | 80A | N-Channel | 1038pF @ 100V | 199m Ω @ 10A, 10V | 4.1V @ 250μA | 20A Tc | 19.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB100N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-ixfb100n50p-datasheets-2408.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 35 Weeks | 49MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.25kW | 1 | 29ns | 26 ns | 110 ns | 100A | 30V | DRAIN | SWITCHING | 1890W Tc | 250A | 5000 mJ | 500V | N-Channel | 20000pF @ 25V | 49m Ω @ 50A, 10V | 5V @ 8mA | 100A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPSA70R1K2P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r1k2p7sakma1-datasheets-2410.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 25W Tc | 9.4A | N-Channel | 174pF @ 400V | 1.2 Ω @ 900mA, 10V | 3.5V @ 40μA | 4.5A Tc | 4.8nC @ 400V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX300N20X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx300n20x3-datasheets-2423.pdf | TO-247-3 | 19 Weeks | 200V | 1250W Tc | N-Channel | 23800pF @ 25V | 4m Ω @ 150A, 10V | 4.5V @ 8mA | 300A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R950CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r950cexksa2-datasheets-2425.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 7 ns | 4.9ns | 19.5 ns | 25 ns | 3.7A | 30V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 25.7W Tc | TO-220AB | 12.8A | 0.95Ohm | 68 mJ | N-Channel | 231pF @ 100V | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 3.7A Tc | 10.5nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RCX081N20 | ROHM Semiconductor | $2.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 8A | 32A | 0.77Ohm | 5.17 mJ | N-Channel | 330pF @ 25V | 770m Ω @ 4A, 10V | 5.25V @ 1mA | 8A Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH340N075T2 | IXYS | $8.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh340n075t2-datasheets-2443.pdf | TO-247-3 | Lead Free | 30 Weeks | 935W | 1 | TO-247AD (IXFH) | 19nF | 340A | 20V | 75V | 935W Tc | N-Channel | 19000pF @ 25V | 3.2mOhm @ 100A, 10V | 4V @ 3mA | 340A Tc | 300nC @ 10V | 3.2 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN3545N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/microchiptechnology-dn3545n3g-datasheets-2445.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | e3 | Matte Tin (Sn) | BOTTOM | WIRE | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 740mW | 1 | FET General Purpose Power | Not Qualified | 20 ns | 30ns | 30 ns | 30 ns | 136mA | 20V | SILICON | SWITCHING | 450V | 740mW Ta | 450V | N-Channel | 360pF @ 25V | 20 Ω @ 150mA, 0V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP85NF55L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb85nf55lt4-datasheets-4614.pdf | TO-220-3 | Lead Free | 3 | 38 Weeks | 8mOhm | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | STP85N | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 35 ns | 165ns | 55 ns | 70 ns | 80A | 15V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 320A | 980 mJ | 55V | N-Channel | 4050pF @ 25V | 8m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 110nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| IXTA80N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp80n10t-datasheets-0277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 54ns | 48 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 220A | 400 mJ | 100V | N-Channel | 3040pF @ 25V | 14m Ω @ 25A, 10V | 5V @ 100μA | 80A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| DN2535N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microchiptechnology-dn2535n5g-datasheets-1204.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 5 Weeks | 453.59237mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 10 ns | 15ns | 20 ns | 15 ns | 120mA | 20V | SILICON | SWITCHING | 1W Tc | 5 pF | 350V | N-Channel | 300pF @ 25V | 25 Ω @ 120mA, 0V | 120mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFN70N100X | IXYS | $56.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn70n100x-datasheets-2376.pdf | SOT-227-4, miniBLOC | 19 Weeks | 1000V | 1200W Tc | N-Channel | 9150pF @ 25V | 89m Ω @ 35A, 10V | 6V @ 8mA | 56A Tc | 350nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA08N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa08n80c3xksa1-datasheets-2379.pdf | 800V | 8A | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 40W | 1 | 25 ns | 15ns | 7 ns | 65 ns | 8A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 8A | 24A | 0.65Ohm | N-Channel | 1100pF @ 100V | 650m Ω @ 5.1A, 10V | 3.9V @ 470μA | 8A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTN400N15X4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtn400n15x4-datasheets-2282.pdf | SOT-227-4, miniBLOC | 15 Weeks | 150V | 1070W Tc | N-Channel | 14500pF @ 25V | 2.7m Ω @ 100A, 10V | 4.5V @ 1mA | 400A Tc | 430nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN40P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtn40p50p-datasheets-2285.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 40A | 20V | SILICON | ISOLATED | SWITCHING | 500V | 890W Tc | 120A | 0.23Ohm | 3500 mJ | -500V | P-Channel | 11500pF @ 25V | 230m Ω @ 500mA, 10V | 4V @ 1mA | 40A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD18514Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18514 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 74W Tc | 237A | 0.0079Ohm | 55 mJ | N-Channel | 2683pF @ 20V | 7.9m Ω @ 15A, 10V | 2.4V @ 250μA | 89A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFB90N85X | IXYS | $38.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfb90n85x-datasheets-2302.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | unknown | 90A | 850V | 1785W Tc | N-Channel | 13300pF @ 25V | 41m Ω @ 500mA, 10V | 5.5V @ 8mA | 90A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6215STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf6215strrpbf-datasheets-2240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 110W Tc | 13A | 44A | 0.29Ohm | 310 mJ | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V |
