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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF730APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf730apbf-datasheets-2354.pdf | 400V | 5.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1Ohm | 3 | Tin | No | 1 | Single | 74W | 1 | TO-220AB | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 4.5V | 74W Tc | 550 ns | 1Ohm | 400V | N-Channel | 600pF @ 25V | 4.5 V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| CSD17581Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 800μm | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | CSD17581 | Single | 1 | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 63W Tc | 21A | 154A | 0.0047Ohm | 195 pF | 76 mJ | N-Channel | 3640pF @ 15V | 3.8m Ω @ 16A, 10V | 1.7V @ 250μA | 60A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN30N100L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtn30n100l-datasheets-2269.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 450MOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 800W | 1 | FET General Purpose Power | 70ns | 78 ns | 100 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 800W Tc | 70A | 2000 mJ | 1kV | N-Channel | 13700pF @ 25V | 450m Ω @ 15A, 20V | 5.5V @ 250μA | 30A Tc | 545nC @ 20V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH110N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth110n25t-datasheets-2271.pdf | TO-247-3 | Lead Free | 3 | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 694W | 1 | FET General Purpose Power | 27ns | 27 ns | 60 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 694W Tc | TO-247AD | 250V | N-Channel | 9400pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 1mA | 110A Tc | 157nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF4N60L | Alpha & Omega Semiconductor Inc. | $4.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-220-3 Full Pack | 18 Weeks | NO | FET General Purpose Power | Single | 600V | 35W Tc | 4A | N-Channel | 615pF @ 25V | 2.2 Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN400N15X4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtn400n15x4-datasheets-2282.pdf | SOT-227-4, miniBLOC | 15 Weeks | 150V | 1070W Tc | N-Channel | 14500pF @ 25V | 2.7m Ω @ 100A, 10V | 4.5V @ 1mA | 400A Tc | 430nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN40P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtn40p50p-datasheets-2285.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 40A | 20V | SILICON | ISOLATED | SWITCHING | 500V | 890W Tc | 120A | 0.23Ohm | 3500 mJ | -500V | P-Channel | 11500pF @ 25V | 230m Ω @ 500mA, 10V | 4V @ 1mA | 40A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD18514Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18514 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 74W Tc | 237A | 0.0079Ohm | 55 mJ | N-Channel | 2683pF @ 20V | 7.9m Ω @ 15A, 10V | 2.4V @ 250μA | 89A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB90N85X | IXYS | $38.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfb90n85x-datasheets-2302.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | unknown | 90A | 850V | 1785W Tc | N-Channel | 13300pF @ 25V | 41m Ω @ 500mA, 10V | 5.5V @ 8mA | 90A Tc | 340nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6215STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf6215strrpbf-datasheets-2240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 110W Tc | 13A | 44A | 0.29Ohm | 310 mJ | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK120N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfk120n65x2-datasheets-9221.pdf | TO-264-3, TO-264AA | 19 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 120A | 650V | 1250W Tc | N-Channel | 15500pF @ 25V | 24m Ω @ 60A, 10V | 5.5V @ 8mA | 120A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP50N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtp50n25t-datasheets-2212.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 50A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-220AB | 0.05Ohm | 1500 mJ | 250V | N-Channel | 4000pF @ 25V | 50m Ω @ 25A, 10V | 5V @ 1mA | 50A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh170n25x3-datasheets-2189.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | 250V | 960W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP9NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk50zfp-datasheets-3034.pdf | 500V | 7.2A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 850mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP9N | 3 | Single | 110W | 1 | FET General Purpose Power | 17 ns | 20ns | 22 ns | 45 ns | 7.2A | 30V | SILICON | SWITCHING | 3.75V | 110W Tc | TO-220AB | 28.8A | 500V | N-Channel | 910pF @ 25V | 850m Ω @ 3.6A, 10V | 4.5V @ 100μA | 7.2A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFN170N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn170n65x2-datasheets-2222.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 650V | 1170W Tc | N-Channel | 27000pF @ 25V | 13m Ω @ 85A, 10V | 5V @ 8mA | 170A Tc | 434nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT29F100B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt29f100b2-datasheets-2224.pdf | 1kV | 29A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1.04kW | 1 | 39 ns | 35ns | 33 ns | 130 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1040W Tc | 0.44Ohm | N-Channel | 8500pF @ 25V | 440m Ω @ 16A, 10V | 5V @ 2.5mA | 30A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD23203WT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd23203wt-datasheets-9231.pdf | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 6 | 6 Weeks | 1.700971mg | No SVHC | 6 | ACTIVE (Last Updated: 5 days ago) | yes | 2mm | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD23203 | Single | 1 | 14 ns | 12ns | 27 ns | 58 ns | 3A | -6V | SILICON | SWITCHING | 8V | -800mV | 750mW Ta | 3A | 0.053Ohm | 172 pF | -8V | P-Channel | 914pF @ 4V | 19.4m Ω @ 1.5A, 4.5V | 1.1V @ 250μA | 3A Ta | 6.3nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||
| IXTY08N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixtp08n100d2-datasheets-1351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 19 Weeks | 3 | yes | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 800mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 60W Tc | TO-252AA | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 800mA Tc | 14.6nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP530N15N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd530n15n3gatma1-datasheets-3316.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 9 ns | 3 ns | 13 ns | 21A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 68W Tc | TO-220AB | 84A | 60 mJ | N-Channel | 887pF @ 75V | 53m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFN120N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfn120n65x2-datasheets-2190.pdf | SOT-227-4, miniBLOC | 19 Weeks | 108A | 650V | 890W Tc | N-Channel | 15500pF @ 25V | 24m Ω @ 54A, 10V | 5.5V @ 8mA | 108A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN102N65X2 | IXYS | $27.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtn102n65x2-datasheets-2193.pdf | SOT-227-4, miniBLOC | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 76A | 650V | 595AW Tc | N-Channel | 10900pF @ 25V | 30m Ω @ 51A, 10V | 5V @ 250μA | 76A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 180mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 2V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFK320N17T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk320n17t2-datasheets-2200.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | No | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 170V | 320A | 46 ns | 170ns | 230 ns | 115 ns | 320A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1 | 1670W Tc | 800A | 0.0052Ohm | 5000 mJ | N-Channel | 45000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 320A Tc | 640nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTN110N20L2 | IXYS | $45.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn110n20l2-datasheets-2203.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 735W Tc | 275A | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 100A Tc | 500nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STF40N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf40n65m2-datasheets-2205.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STF40N | Single | NOT SPECIFIED | FET General Purpose Power | 15 ns | 96.5 ns | 32A | 25V | 650V | 25W Tc | N-Channel | 2355pF @ 100V | 99m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 56.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP200N25N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb200n25n3gatma1-datasheets-1031.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | Not Qualified | 18 ns | 20ns | 12 ns | 45 ns | 64A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 256A | 0.02Ohm | N-Channel | 7100pF @ 100V | 20m Ω @ 64A, 10V | 4V @ 270μA | 64A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP260MPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfp260mpbf-datasheets-2122.pdf | TO-247-3 | 16.129mm | 21.1mm | 5.2mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 300W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 60ns | 48 ns | 55 ns | 50A | 20V | SILICON | SWITCHING | 4V | 300W Tc | TO-247AC | 200A | 0.04Ohm | 560 mJ | 200V | N-Channel | 4057pF @ 25V | 40m Ω @ 28A, 10V | 4V @ 250μA | 50A Tc | 234nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDB045AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdb045an08a0-datasheets-1538.pdf | 75V | 19A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 11 Weeks | 1.31247g | No SVHC | 4.5MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18 ns | 88ns | 45 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 600 mJ | 75V | N-Channel | 6600pF @ 25V | 4.5m Ω @ 80A, 10V | 4V @ 250μA | 19A Ta 90A Tc | 138nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STP18N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp18n65m2-datasheets-2139.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP18N | Single | NOT SPECIFIED | FET General Purpose Power | 11 ns | 46 ns | 12A | 25V | 650V | 110W Tc | N-Channel | 770pF @ 100V | 330m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 20nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP250PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfp250pbf-datasheets-2143.pdf | 200V | 30A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 85mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.8nF | 16 ns | 86ns | 62 ns | 70 ns | 30A | 20V | 200V | 4V | 190W Tc | 85mOhm | 200V | N-Channel | 2800pF @ 25V | 4 V | 85mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 140nC @ 10V | 85 mΩ | 10V | ±20V |
