Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Lead Length | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFU5410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfu5410pbf-datasheets-2314.pdf | -100V | -13A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.28mm | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 9.65mm | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 66W | 1 | Other Transistors | 15 ns | 58ns | 46 ns | 45 ns | -13A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | -4V | 66W Tc | 52A | 0.205Ohm | -100V | P-Channel | 760pF @ 25V | -4 V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| HUF75645P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75645s3st-datasheets-9149.pdf | 100V | 75A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 6 Weeks | 4.535924g | No SVHC | 14mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 75A | e3 | Tin (Sn) | 100V | Single | 310W | 1 | FET General Purpose Power | 14 ns | 117ns | 97 ns | 41 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-220AB | 100V | N-Channel | 3790pF @ 25V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF6215STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf6215strrpbf-datasheets-2240.pdf | -150V | -13A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 290mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | Other Transistors | R-PSSO-G2 | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | 150V | SILICON | DRAIN | SWITCHING | -4V | 3.8W Ta 110W Tc | 44A | -150V | P-Channel | 860pF @ 25V | -4 V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFP140PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/vishaysiliconix-irfp140pbf-datasheets-2342.pdf | 100V | 31A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 77mOhm | 3 | No | 1 | Single | 180W | 1 | TO-247-3 | 1.7nF | 11 ns | 44ns | 43 ns | 53 ns | 31A | 20V | 100V | 4V | 180W Tc | 77mOhm | 100V | N-Channel | 1700pF @ 25V | 4 V | 77mOhm @ 19A, 10V | 4V @ 250μA | 31A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOU3N50 | Alpha & Omega Semiconductor Inc. | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 57W | 1 | 2.8A | 30V | 500V | 57W Tc | N-Channel | 331pF @ 25V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 2.8A Tc | 8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf730apbf-datasheets-2354.pdf | 400V | 5.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1Ohm | 3 | Tin | No | 1 | Single | 74W | 1 | TO-220AB | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 4.5V | 74W Tc | 550 ns | 1Ohm | 400V | N-Channel | 600pF @ 25V | 4.5 V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17581Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 800μm | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | CSD17581 | Single | 1 | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 63W Tc | 21A | 154A | 0.0047Ohm | 195 pF | 76 mJ | N-Channel | 3640pF @ 15V | 3.8m Ω @ 16A, 10V | 1.7V @ 250μA | 60A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN30N100L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtn30n100l-datasheets-2269.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 450MOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 800W | 1 | FET General Purpose Power | 70ns | 78 ns | 100 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 800W Tc | 70A | 2000 mJ | 1kV | N-Channel | 13700pF @ 25V | 450m Ω @ 15A, 20V | 5.5V @ 250μA | 30A Tc | 545nC @ 20V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH110N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth110n25t-datasheets-2271.pdf | TO-247-3 | Lead Free | 3 | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 694W | 1 | FET General Purpose Power | 27ns | 27 ns | 60 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 694W Tc | TO-247AD | 250V | N-Channel | 9400pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 1mA | 110A Tc | 157nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF4N60L | Alpha & Omega Semiconductor Inc. | $4.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-220-3 Full Pack | 18 Weeks | NO | FET General Purpose Power | Single | 600V | 35W Tc | 4A | N-Channel | 615pF @ 25V | 2.2 Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN102N65X2 | IXYS | $27.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtn102n65x2-datasheets-2193.pdf | SOT-227-4, miniBLOC | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 76A | 650V | 595AW Tc | N-Channel | 10900pF @ 25V | 30m Ω @ 51A, 10V | 5V @ 250μA | 76A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 180mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 2V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK320N17T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk320n17t2-datasheets-2200.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | No | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 170V | 320A | 46 ns | 170ns | 230 ns | 115 ns | 320A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1 | 1670W Tc | 800A | 0.0052Ohm | 5000 mJ | N-Channel | 45000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 320A Tc | 640nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN110N20L2 | IXYS | $45.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn110n20l2-datasheets-2203.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 735W Tc | 275A | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 100A Tc | 500nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF40N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf40n65m2-datasheets-2205.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STF40N | Single | NOT SPECIFIED | FET General Purpose Power | 15 ns | 96.5 ns | 32A | 25V | 650V | 25W Tc | N-Channel | 2355pF @ 100V | 99m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 56.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK120N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfk120n65x2-datasheets-9221.pdf | TO-264-3, TO-264AA | 19 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 120A | 650V | 1250W Tc | N-Channel | 15500pF @ 25V | 24m Ω @ 60A, 10V | 5.5V @ 8mA | 120A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP50N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtp50n25t-datasheets-2212.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 50A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-220AB | 0.05Ohm | 1500 mJ | 250V | N-Channel | 4000pF @ 25V | 50m Ω @ 25A, 10V | 5V @ 1mA | 50A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh170n25x3-datasheets-2189.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | 250V | 960W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP9NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk50zfp-datasheets-3034.pdf | 500V | 7.2A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 850mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP9N | 3 | Single | 110W | 1 | FET General Purpose Power | 17 ns | 20ns | 22 ns | 45 ns | 7.2A | 30V | SILICON | SWITCHING | 3.75V | 110W Tc | TO-220AB | 28.8A | 500V | N-Channel | 910pF @ 25V | 850m Ω @ 3.6A, 10V | 4.5V @ 100μA | 7.2A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFN170N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn170n65x2-datasheets-2222.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 650V | 1170W Tc | N-Channel | 27000pF @ 25V | 13m Ω @ 85A, 10V | 5V @ 8mA | 170A Tc | 434nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT29F100B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt29f100b2-datasheets-2224.pdf | 1kV | 29A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1.04kW | 1 | 39 ns | 35ns | 33 ns | 130 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1040W Tc | 0.44Ohm | N-Channel | 8500pF @ 25V | 440m Ω @ 16A, 10V | 5V @ 2.5mA | 30A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD23203WT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd23203wt-datasheets-9231.pdf | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 6 | 6 Weeks | 1.700971mg | No SVHC | 6 | ACTIVE (Last Updated: 5 days ago) | yes | 2mm | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD23203 | Single | 1 | 14 ns | 12ns | 27 ns | 58 ns | 3A | -6V | SILICON | SWITCHING | 8V | -800mV | 750mW Ta | 3A | 0.053Ohm | 172 pF | -8V | P-Channel | 914pF @ 4V | 19.4m Ω @ 1.5A, 4.5V | 1.1V @ 250μA | 3A Ta | 6.3nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixtp08n100d2-datasheets-1351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 19 Weeks | 3 | yes | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 800mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 60W Tc | TO-252AA | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 800mA Tc | 14.6nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP530N15N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd530n15n3gatma1-datasheets-3316.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 9 ns | 3 ns | 13 ns | 21A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 68W Tc | TO-220AB | 84A | 60 mJ | N-Channel | 887pF @ 75V | 53m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN120N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfn120n65x2-datasheets-2190.pdf | SOT-227-4, miniBLOC | 19 Weeks | 108A | 650V | 890W Tc | N-Channel | 15500pF @ 25V | 24m Ω @ 54A, 10V | 5.5V @ 8mA | 108A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9Z34GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfi9z34gpbf-datasheets-2096.pdf | -60V | -12A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | -12A | 20V | 60V | -4V | 42W Tc | 140mOhm | -60V | P-Channel | 1100pF @ 25V | -4 V | 140mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R1-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn1r130pl127-datasheets-2101.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 95 ns | 213ns | 115 ns | 199 ns | 120A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | TO-220AB | 30V | N-Channel | 14850pF @ 15V | 1.3m Ω @ 25A, 10V | 2.2V @ 1mA | 120A Tc | 243nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT42F50B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt42f50b-datasheets-2108.pdf | 500V | 42A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 29 ns | 35ns | 26 ns | 80 ns | 42A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 625W Tc | 930 mJ | N-Channel | 6810pF @ 25V | 130m Ω @ 21A, 10V | 5V @ 1mA | 42A Tc | 170nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK20A60U(Q,M) | Toshiba Semiconductor and Storage | $25.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 52 Weeks | 3 | No | Single | 45W | 1 | TO-220SIS | 1.47nF | 40ns | 12 ns | 20A | 30V | 600V | 45W Tc | 190mOhm | 600V | N-Channel | 1470pF @ 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 20A Ta | 27nC @ 10V | 190 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT220N20X3HV | IXYS | $17.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V |
