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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDPF5N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf5n50nz-datasheets-2629.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 30W | 1 | FET General Purpose Power | 12 ns | 22ns | 21 ns | 28 ns | 4.5A | 25V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 500V | N-Channel | 440pF @ 25V | 5 V | 1.5 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 12nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| IPAN60R800CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipan60r800cexksa1-datasheets-2638.pdf | TO-220-3 Full Pack | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 8.4A | 600V | 27W Tc | N-Channel | 373pF @ 100V | 800m Ω @ 2A, 10V | 3.5V @ 170μA | 8.4A Tc | 17.2nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2540N3-G | Microchip Technology | $7.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn2540n8g-datasheets-9473.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 2 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | FET General Purpose Power | 20 ns | 15ns | 20 ns | 25 ns | 175mA | 20V | SILICON | SWITCHING | 1W Ta | 25 pF | 400V | N-Channel | 125pF @ 25V | 12 Ω @ 500mA, 10V | 2V @ 1mA | 175mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOT8N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot8n50-datasheets-9473.pdf | TO-220-3 | 18 Weeks | No | 192W | 1 | FET General Purpose Power | 8A | Single | 500V | 192W Tc | 8A | N-Channel | 1042pF @ 25V | 850m Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdp8n50nz-datasheets-2661.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | 3 | 6 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 34ns | 27 ns | 43 ns | 8A | 25V | SILICON | SWITCHING | 500V | 500V | 130W Tc | TO-220AB | 8A | 0.85Ohm | N-Channel | 735pF @ 25V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 18nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| IPP057N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp057n06n3gxksa1-datasheets-2671.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 115W | 1 | FET General Purpose Power | Not Qualified | 24 ns | 68ns | 9 ns | 32 ns | 80A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 115W Tc | TO-220AB | 0.0057Ohm | 77 mJ | N-Channel | 6600pF @ 30V | 5.7m Ω @ 80A, 10V | 4V @ 58μA | 80A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA70R450P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa70r450p7sxksa1-datasheets-2678.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 22.7W Tc | TO-220AB | 25.9A | 0.45Ohm | N-Channel | 424pF @ 400V | 450m Ω @ 2.3A, 10V | 3.5V @ 120μA | 10A | 13.1nC @ 400V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2210N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/microchiptechnology-vn2210n2-datasheets-4857.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | Single | 1W | 1 | 10 ns | 10ns | 30 ns | 50 ns | 1.2A | 20V | SILICON | SWITCHING | 740mW Tc | 65 pF | 100V | N-Channel | 500pF @ 25V | 350m Ω @ 4A, 10V | 2.4V @ 10mA | 1.2A Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQP20N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp20n06-datasheets-2687.pdf | 60V | 20A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 70mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 53W | 1 | FET General Purpose Power | 5 ns | 45ns | 20 ns | 20 ns | 20A | 25V | SILICON | SWITCHING | 4V | 53W Tc | TO-220AB | 80A | 60V | N-Channel | 590pF @ 25V | 60m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| FDP5N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf5n50nz-datasheets-2629.pdf | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 78W | 1 | FET General Purpose Power | Not Qualified | 12 ns | 22ns | 21 ns | 28 ns | 4.5A | 25V | SILICON | SWITCHING | 78W Tc | TO-220AB | 500V | N-Channel | 440pF @ 25V | 1.5 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 12nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/vishaysiliconix-irfr014trlpbf-datasheets-8479.pdf | 60V | 7.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 25W | 1 | D-Pak | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 7.7A | 20V | 60V | 4V | 2.5W Ta 25W Tc | 140 ns | 200mOhm | 60V | N-Channel | 300pF @ 25V | 200mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN90N85X | IXYS | $264.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfn90n85x-datasheets-2600.pdf | SOT-227-4, miniBLOC | 19 Weeks | SOT-227B | 13.3nF | 90A | 850V | 1200W Tc | N-Channel | 13300pF @ 25V | 41mOhm @ 500mA, 10V | 5.5V @ 8mA | 90A Tc | 340nC @ 10V | 41 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP40NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf40nf20-datasheets-3348.pdf | 200V | 40A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 45mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP40N | 3 | Single | 160W | 1 | FET General Purpose Power | 20 ns | 44ns | 22 ns | 74 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3V | 160W Tc | TO-220AB | 200V | N-Channel | 2500pF @ 25V | 45m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFI640GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfi640gpbf-datasheets-2607.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 2.5kV | 14 ns | 51ns | 36 ns | 45 ns | 9.8A | 20V | 200V | 4V | 40W Tc | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 180mOhm @ 5.9A, 10V | 4V @ 250μA | 9.8A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA041N04NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa041n04ngxksa1-datasheets-2613.pdf | TO-220-3 Full Pack | Lead Free | 13 Weeks | 3 | Halogen Free | PG-TO220-FP | 4.5nF | 16 ns | 3.8ns | 4.8 ns | 23 ns | 70A | 20V | 40V | 40V | 35W Tc | 3.5mOhm | N-Channel | 4500pF @ 20V | 4.1mOhm @ 70A, 10V | 4V @ 45μA | 70A Tc | 56nC @ 10V | 4.1 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB6N80TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb6n80tm-datasheets-2535.pdf | 800V | 5.8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | No SVHC | 1.95Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.13W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30 ns | 70ns | 45 ns | 65 ns | 5.8A | 30V | SILICON | DRAIN | SWITCHING | 5V | 3.13W Ta 158W Tc | 680 mJ | 800V | N-Channel | 1500pF @ 25V | 1.95 Ω @ 2.9A, 10V | 5V @ 250μA | 5.8A Tc | 31nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IPW90R340C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw90r340c3fksa1-datasheets-2543.pdf | TO-247-3 | 3 | 40 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 208W Tc | 15A | 34A | 0.34Ohm | 678 mJ | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN70N60Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn70n60q2-datasheets-2549.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 10 Weeks | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 890W | 1 | FET General Purpose Power | 25ns | 12 ns | 60 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 280A | 0.08Ohm | 5000 mJ | 600V | N-Channel | 7200pF @ 25V | 80m Ω @ 35A, 10V | 5V @ 8mA | 70A Tc | 265nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| VN0606L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/microchiptechnology-vn0606lg-datasheets-2551.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 10 ns | 10 ns | 330mA | 30V | SILICON | SWITCHING | 1W Tc | 3Ohm | 5 pF | 60V | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 330mA Tj | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfu024npbf-datasheets-2557.pdf | 55V | 17A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 75mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | e3 | 260 | Single | 30 | 38W | 1 | 4.9 ns | 34ns | 27 ns | 19 ns | 17A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 45W Tc | 68A | 55V | N-Channel | 370pF @ 25V | 4 V | 75m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AOT5N50 | Alpha & Omega Semiconductor Inc. | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | No | 104W | 1 | 5A | 30V | 500V | 104W Tc | N-Channel | 620pF @ 25V | 1.5 Ω @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BBL4001-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-bbl40011e-datasheets-2572.pdf | TO-220-3 Full Pack | Lead Free | 9 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | Copper, Silver, Tin | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 48 ns | 300ns | 340 ns | 510 ns | 74A | 20V | Single | 60V | 2W Ta 35W Tc | N-Channel | 6900pF @ 20V | 6.1m Ω @ 37A, 10V | 2.6V @ 1mA | 74A Ta | 135nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP5864NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntp5864ng-datasheets-2576.pdf | TO-220-3 | 10.28mm | 4.82mm | 15.75mm | Lead Free | 3 | 20 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 107W | 1 | FET General Purpose Power | 10 ns | 6.4ns | 4.6 ns | 18 ns | 63A | 20V | SILICON | DRAIN | 107W Tc | TO-220AB | 252A | 80 mJ | 60V | N-Channel | 1680pF @ 25V | 12.4m Ω @ 20A, 10V | 4V @ 250μA | 63A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STW18N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw18n60dm2-datasheets-2580.pdf | TO-247-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW18N | NOT SPECIFIED | 12A | 600V | 3V | 90W Tc | N-Channel | 800pF @ 100V | 295m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 20nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8880 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdp8880-datasheets-2586.pdf | 30V | 54A | TO-220-3 | 10.67mm | 9.65mm | 4.83mm | Lead Free | 3 | 10 Weeks | 1.8g | No SVHC | 11.6MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 55W | 1 | FET General Purpose Power | Not Qualified | 8 ns | 107ns | 51 ns | 47 ns | 54A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 55W Tc | TO-220AB | 30V | N-Channel | 1240pF @ 15V | 2.5 V | 11.6m Ω @ 40A, 10V | 2.5V @ 250μA | 11A Ta 54A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFD9210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfd9210pbf-datasheets-2503.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 8 Weeks | Unknown | 3Ohm | 4 | No | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 170pF | 8 ns | 12ns | 12 ns | 11 ns | 400mA | 20V | 200V | -4V | 1W Ta | 3Ohm | 200V | P-Channel | 170pF @ 25V | 3Ohm @ 240mA, 10V | 4V @ 250μA | 400mA Ta | 8.9nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP11P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp11p06-datasheets-2506.pdf | -60V | -11.4A | TO-220-3 | 10.1mm | 15.38mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 53W | 1 | Other Transistors | 6.5 ns | 40ns | 45 ns | 15 ns | 11.4A | 25V | SILICON | SWITCHING | 60V | 53W Tc | TO-220AB | 45.6A | -60V | P-Channel | 550pF @ 25V | 175m Ω @ 5.7A, 10V | 4V @ 250μA | 11.4A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| IPAN50R500CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipan50r500cexksa1-datasheets-2515.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 11.1A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 28W Tc | TO-220AB | 24A | 0.5Ohm | 129 mJ | N-Channel | 433pF @ 100V | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 11.1A Tc | 18.7nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT53F80J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt53f80j-datasheets-2523.pdf | 800V | 53A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 33 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 960W | 1 | 100 ns | 145ns | 125 ns | 435 ns | 57A | 30V | SILICON | ISOLATED | SWITCHING | 960W Tc | 325A | 3725 mJ | N-Channel | 17550pF @ 25V | 110m Ω @ 43A, 10V | 5V @ 5mA | 57A Tc | 570nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFR110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irfr110trpbf-datasheets-0113.pdf | 100V | 4.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 25W | 1 | R-PSSO-G2 | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 25W Tc | TO-252AA | 200 ns | 75 mJ | 100V | N-Channel | 180pF @ 25V | 4 V | 540m Ω @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 10V | ±20V |
