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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQP16N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp16n25-datasheets-3073.pdf | 250V | 16A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 140ns | 75 ns | 45 ns | 16A | 30V | SILICON | SWITCHING | 142W Tc | TO-220AB | 64A | 560 mJ | 250V | N-Channel | 1200pF @ 25V | 230m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPP060N06NAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp060n06naksa1-datasheets-3090.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 3 | no | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 83W | 1 | 12ns | 7 ns | 20 ns | 45A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3W Ta 83W Tc | TO-220AB | 0.006Ohm | 60 mJ | 60V | N-Channel | 2000pF @ 30V | 6m Ω @ 45A, 10V | 2.8V @ 36μA | 17A Ta 45A Tc | 27nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TP2635N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp2635n3g-datasheets-3096.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | Other Transistors | Not Qualified | 10 ns | 15ns | 40 ns | 60 ns | -180mA | 20V | SILICON | SWITCHING | 350V | 1W Ta | -350V | P-Channel | 300pF @ 25V | 15 Ω @ 300mA, 10V | 2V @ 1mA | 180mA Tj | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQPF16N25C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqpf16n25c-datasheets-3101.pdf | 250V | 16A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 7 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 43W | 1 | FET General Purpose Power | 15 ns | 130ns | 105 ns | 135 ns | 15.6A | 30V | SILICON | ISOLATED | SWITCHING | 43W Tc | TO-220AB | 62.4A | 0.27Ohm | 250V | N-Channel | 1080pF @ 25V | 270m Ω @ 7.8A, 10V | 4V @ 250μA | 15.6A Tc | 53.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPA70R900P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa70r900p7sxksa1-datasheets-3107.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 20.5W Tc | TO-220AB | 12.8A | 0.9Ohm | N-Channel | 211pF @ 400V | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 6A Tc | 6.8nC @ 400V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT414 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 | 16 Weeks | 43A | 100V | 1.9W Ta 115W Tc | N-Channel | 2200pF @ 50V | 25m Ω @ 20A, 10V | 4V @ 250μA | 5.6A Ta 43A Tc | 34nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP10N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf10n20c-datasheets-0642.pdf | 200V | 9.5A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 8 Weeks | 1.8g | 360mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 72W | 1 | FET General Purpose Power | 11 ns | 92ns | 72 ns | 70 ns | 9.5A | 30V | SILICON | SWITCHING | 72W Tc | TO-220AB | 200V | N-Channel | 510pF @ 25V | 360m Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRLR024PBF | Vishay Siliconix | $3.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | R-PSSO-G2 | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | SILICON | DRAIN | SWITCHING | 42W Tc | 56A | 60V | N-Channel | 870pF @ 25V | 100m Ω @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| SUP90330E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90330ege3-datasheets-3129.pdf | TO-220-3 | 14 Weeks | EAR99 | unknown | 200V | 125W Tc | N-Channel | 1172pF @ 100V | 37.5m Ω @ 12.2A, 10V | 4V @ 250μA | 35.8A Tc | 32nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK290A65Y,S4X | Toshiba Semiconductor and Storage | $0.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | 650V | 35W Tc | N-Channel | 730pF @ 300V | 290m Ω @ 5.8A, 10V | 4V @ 450μA | 11.5A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP10N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdpf10n60nz-datasheets-1627.pdf | TO-220-3 | 10.36mm | 16.07mm | 4.9mm | 3 | 5 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 185W | 1 | FET General Purpose Power | 25 ns | 50ns | 50 ns | 70 ns | 10A | 25V | SILICON | SWITCHING | 3V | 185W Tc | TO-220AB | 40A | 0.75Ohm | 550 mJ | 600V | N-Channel | 1475pF @ 25V | 750m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| CSD18510Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18510q5bt-datasheets-9685.pdf | 8-PowerTDFN | 5mm | 6mm | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | AVALANCHE RATED | not_compliant | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | CSD18510 | Single | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 156W Tc | 42A | 400A | 0.0016Ohm | 551 pF | N-Channel | 11400pF @ 20V | 0.96m Ω @ 32A, 10V | 2.3V @ 250μA | 300A Tc | 153nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL7833PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl7833pbf-datasheets-2940.pdf | 30V | 150A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.8MOhm | 3 | EAR99 | Tin | No | Single | 140W | 1 | FET General Purpose Power | 18 ns | 50ns | 6.9 ns | 21 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 140W Tc | TO-220AB | 63 ns | 75A | 600A | 560 mJ | 30V | N-Channel | 4170pF @ 15V | 2.3 V | 3.8m Ω @ 38A, 10V | 2.3V @ 250μA | 150A Tc | 47nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STF12N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf12n65m2-datasheets-2952.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF12 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 9 ns | 34 ns | 8A | 25V | SILICON | ISOLATED | SWITCHING | 650V | 650V | 25W Tc | TO-220AB | 8A | 0.5Ohm | 250 mJ | N-Channel | 535pF @ 100V | 500m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 16.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK290A60Y,S4X | Toshiba Semiconductor and Storage | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | 600V | 35W Tc | N-Channel | 730pF @ 300V | 290m Ω @ 5.8A, 10V | 4V @ 450μA | 11.5A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ14GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfiz14gpbf-datasheets-2960.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | No | 1 | Single | 27W | 1 | TO-220-3 | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 8A | 20V | 60V | 4V | 27W Tc | 200mOhm | N-Channel | 300pF @ 25V | 4 V | 200mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFB23N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb23n15dpbf-datasheets-2965.pdf | 150V | 23A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 90mOhm | 3 | EAR99 | No | Single | 3.8W | 1 | FET General Purpose Power | 10 ns | 32ns | 8.4 ns | 18 ns | 23A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5.5V | 3.8W Ta 136W Tc | TO-220AB | 92A | 260 mJ | 150V | N-Channel | 1200pF @ 25V | 5.5 V | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 23A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFR310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | 400V | 1.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3.6Ohm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 4V | 2.5W Ta 25W Tc | 540 ns | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFB7446PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb7446pbf-datasheets-2984.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 99W | 1 | FET General Purpose Power | 11 ns | 34ns | 23 ns | 33 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 3V | 99W Tc | TO-220AB | 22 ns | 492A | 40V | N-Channel | 3183pF @ 25V | 3 V | 3.3m Ω @ 70A, 10V | 3.9V @ 100μA | 120A Tc | 93nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQPF19N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqp19n20c-datasheets-1841.pdf | 200V | 19A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 43W | 1 | FET General Purpose Power | 15 ns | 150ns | 115 ns | 135 ns | 19A | 30V | SILICON | ISOLATED | SWITCHING | 43W Tc | TO-220AB | 76A | 200V | N-Channel | 1080pF @ 25V | 170m Ω @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FQPF9P25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf9p25-datasheets-3002.pdf | TO-220-3 Full Pack | 3 | 4 Weeks | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 50W Tc | 6A | 24A | 0.62Ohm | 650 mJ | P-Channel | 1180pF @ 25V | 620m Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDP65N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp65n06-datasheets-3013.pdf | 60V | 65A | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 135W | 1 | FET General Purpose Power | Not Qualified | 24 ns | 94ns | 52 ns | 98 ns | 65A | 20V | SILICON | SWITCHING | 135W Tc | TO-220AB | 260A | 60V | N-Channel | 2170pF @ 25V | 2 V | 16m Ω @ 32.5A, 10V | 4V @ 250μA | 65A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD18504KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18504kcs-datasheets-3023.pdf | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | CSD18504 | Single | 93W | 1 | FET General Purpose Power | 4.4 ns | 5.2ns | 4.2 ns | 11.2 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 115W Tc | 88 mJ | 40V | N-Channel | 1800pF @ 20V | 7m Ω @ 40A, 10V | 2.3V @ 250μA | 53A Ta 100A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK7A60W5,S5VX | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 490pF | 7A | 600V | 30W Tc | N-Channel | 490pF @ 300V | 650mOhm @ 3.5A, 10V | 4.5V @ 350μA | 7A Ta | 16nC @ 10V | 650 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R280P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ipa60r280p7sxksa1-datasheets-3032.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 24W Tc | TO-220AB | 36A | 0.28Ohm | 38 mJ | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP6N40CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp6n40cf-datasheets-3035.pdf | TO-220-3 | 3 | 11 Weeks | 1.8g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 73W | 1 | FET General Purpose Power | R-PSFM-T3 | 13 ns | 65ns | 38 ns | 21 ns | 6A | 30V | SILICON | SWITCHING | 73W Tc | TO-220AB | 6A | 24A | 270 mJ | 400V | N-Channel | 625pF @ 25V | 1.1 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP042N03LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp042n03lgxksa1-datasheets-3044.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 79W | 1 | Not Qualified | 7.4 ns | 5.6ns | 4.4 ns | 28 ns | 70A | 20V | 30V | SILICON | SWITCHING | 1V | 79W Tc | TO-220AB | 400A | 0.006Ohm | 60 mJ | 30V | N-Channel | 3900pF @ 15V | 4.2m Ω @ 30A, 10V | 2.2V @ 250μA | 70A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF30N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf30n06l-datasheets-2837.pdf | 60V | 22.5A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 15 ns | 210ns | 110 ns | 60 ns | 22.5A | 20V | SILICON | ISOLATED | SWITCHING | 38W Tc | 90A | 0.045Ohm | 60V | N-Channel | 1040pF @ 25V | 35m Ω @ 11.3A, 10V | 2.5V @ 250μA | 22.5A Tc | 20nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDP18N20F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp18n20f-datasheets-2851.pdf | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 145MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 50ns | 40 ns | 50 ns | 18A | 30V | SILICON | SWITCHING | 100W Tc | TO-220AB | 72A | 200V | N-Channel | 1180pF @ 25V | 145m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPS70R1K4P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-ips70r1k4p7sakma1-datasheets-2860.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 700V | 22.7W Tc | N-Channel | 158pF @ 400V | 1.4 Ω @ 700mA, 10V | 3.5V @ 40μA | 4A Tc | 4.7nC @ 10V | 10V | ±16V |
