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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFD9020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irfd9020pbf-datasheets-1993.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 4 | 8 Weeks | Unknown | 280mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | Other Transistors | 13 ns | 68ns | 29 ns | 15 ns | 1.6A | 20V | SILICON | SWITCHING | -4V | 1.3W Ta | 60V | P-Channel | 570pF @ 25V | 280m Ω @ 960mA, 10V | 4V @ 1μA | 1.6A Ta | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STW12NK95Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw12nk95z-datasheets-1996.pdf | 950V | 10A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 900mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW12N | 3 | Single | 230W | 1 | FET General Purpose Power | 31 ns | 20ns | 55 ns | 88 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 230W Tc | TO-247AC | 40A | 500 mJ | 950V | N-Channel | 3500pF @ 25V | 900m Ω @ 5A, 10V | 4.5V @ 100μA | 10A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRFP4332PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfp4332pbf-datasheets-2000.pdf | 250V | 57A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 33MOhm | 3 | EAR99 | ULTRA LOW ON-RESISTANCE | Tin | No | Single | 120mW | 1 | FET General Purpose Power | 57A | 30V | 250V | SILICON | DRAIN | SWITCHING | 5V | 360W Tc | TO-247AC | 290 ns | 250V | N-Channel | 5860pF @ 25V | 5 V | 33m Ω @ 35A, 10V | 5V @ 250μA | 57A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP7NK80ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb7nk80zt4-datasheets-1247.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 1.8Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP7N | 3 | Single | 30W | 1 | FET General Purpose Power | 20 ns | 12ns | 20 ns | 45 ns | 5.2A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 20.8A | 800V | N-Channel | 1138pF @ 25V | 1.8 Ω @ 2.6A, 10V | 4.5V @ 100μA | 5.2A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STF8N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std8n65m5-datasheets-3673.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | No SVHC | 600MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | Tin | No | STF8N | Single | 25W | 1 | TO-220FP | 690pF | 50 ns | 14ns | 11 ns | 20 ns | 7A | 25V | 650V | 4V | 25W Tc | 560mOhm | 650V | N-Channel | 690pF @ 100V | 600mOhm @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 15nC @ 10V | 600 mΩ | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| IRFP150PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp150pbf-datasheets-2018.pdf | 100V | 41A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 55mOhm | 3 | 1 | Single | 230W | 1 | TO-247-3 | 2.8nF | 16 ns | 120ns | 81 ns | 60 ns | 41A | 20V | 100V | 2V | 230W Tc | 55mOhm | 100V | N-Channel | 2800pF @ 25V | 4 V | 55mOhm @ 25A, 10V | 4V @ 250μA | 41A Tc | 140nC @ 10V | 55 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTQ22N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq22n50p-datasheets-2023.pdf | 500V | 22A | TO-3P-3, SC-65-3 | Lead Free | 3 | 5 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 50A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STF10NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu10nm60n-datasheets-5644.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STF10N | 3 | Single | 25W | 1 | FET General Purpose Power | 10 ns | 12ns | 15 ns | 32 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 3V | 25W Tc | TO-220AB | 8A | 0.55Ohm | 200 mJ | N-Channel | 540pF @ 50V | 550m Ω @ 4A, 10V | 4V @ 250μA | 10A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| IRF9630SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9630spbf-datasheets-1938.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3W | 1 | D2PAK | 700pF | 12 ns | 27ns | 24 ns | 28 ns | 6.5A | 20V | 200V | -4V | 3W Ta 74W Tc | 300mOhm | -200V | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFP9140NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfp9140npbf-datasheets-1943.pdf&product=infineontechnologies-irfp9140npbf-6842988 | -100V | -23A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 117mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 120W | 1 | Other Transistors | 15 ns | 67ns | 51 ns | -23A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | -4V | 140W Tc | TO-247AC | 220 ns | 76A | -100V | P-Channel | 1300pF @ 25V | -4 V | 117m Ω @ 13A, 10V | 4V @ 250μA | 23A Tc | 97nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STF13N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf13n60dm2-datasheets-1854.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF13 | 600V | 25W Tc | N-Channel | 730pF @ 100V | 365m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFH24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfh24n60m2-datasheets-1857.pdf | TO-220-3 Full Pack | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STFH24N | NOT SPECIFIED | 18A | 600V | 3V | 35W Tc | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDP6060L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndb6060l-datasheets-1783.pdf | 60V | 48A | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 25mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Single | 100W | 1 | FET General Purpose Power | 15 ns | 320ns | 161 ns | 49 ns | 48A | 16V | SILICON | SWITCHING | 2V | 100W Tc | TO-220AB | 200 mJ | 60V | N-Channel | 2000pF @ 25V | 20m Ω @ 24A, 10V | 2V @ 250μA | 48A Tc | 60nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFI4410ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfi4410zpbf-datasheets-1872.pdf | TO-220-3 Full Pack | 10.7442mm | 9.8044mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 47W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 27ns | 30 ns | 43 ns | 43A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 47W Tc | TO-220AB | 170A | 100V | N-Channel | 4910pF @ 50V | 9.3m Ω @ 26A, 10V | 4V @ 150μA | 43A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FDPF33N25T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdpf33n25t-datasheets-1883.pdf | 250V | 20A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 230ns | 120 ns | 75 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 37W Tc | TO-220AB | 0.094Ohm | 250V | N-Channel | 2135pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRFP3710PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfp3710pbf-datasheets-1891.pdf&product=infineontechnologies-irfp3710pbf-6842980 | 100V | 57A | TO-247-3 | 15.875mm | 24.99mm | 5.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 1 | Single | 180W | 1 | 175°C | 14 ns | 59ns | 48 ns | 58 ns | 57A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | TO-247AC | 320 ns | 0.025Ohm | 100V | N-Channel | 3000pF @ 25V | 4 V | 25m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFZ40PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz40pbf-datasheets-1903.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 126W | 1 | FET General Purpose Power | 15 ns | 25ns | 12 ns | 35 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 4V | 150W Tc | TO-220AB | 50A | 200A | 0.028Ohm | N-Channel | 1900pF @ 25V | 4 V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| AOT11S60L | Alpha & Omega Semiconductor Inc. | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 3 | 16 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 178W | 1 | FET General Purpose Powers | R-PSFM-T3 | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 178W Tc | TO-220AB | 45A | 0.399Ohm | N-Channel | 545pF @ 100V | 399m Ω @ 3.8A, 10V | 4.1V @ 250μA | 11A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP13NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13nk60z-datasheets-6353.pdf | 600V | 13A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP13N | 3 | Single | 150W | 1 | FET General Purpose Power | 22 ns | 14ns | 12 ns | 61 ns | 13A | 30V | SILICON | SWITCHING | 3.75V | 150W Tc | TO-220AB | 52A | 0.55Ohm | 400 mJ | 600V | N-Channel | 2030pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 13A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP85N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu85n3lh5-datasheets-8058.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | No SVHC | 5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP85N | 3 | Single | 70W | 1 | FET General Purpose Power | 6 ns | 14ns | 10.8 ns | 23.6 ns | 80A | 22V | SILICON | DRAIN | SWITCHING | 2.5V | 70W Tc | TO-220AB | 30V | N-Channel | 1850pF @ 25V | 5.4m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 14nC @ 5V | 5V 10V | ±22V | ||||||||||||||||||||||||||||||||||||||||
| SQP100P06-9M3L_GE3 | Vishay Siliconix | $7.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp100p069m3lge3-datasheets-1926.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 187W Tc | P-Channel | 12010pF @ 25V | 9.3mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 300nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB5620PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfb5620pbf-datasheets-1928.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 12 Weeks | No SVHC | 72.5MOhm | 3 | Tin | No | Single | 144W | 1 | TO-220AB | 1.71nF | 8.6 ns | 14.6ns | 9.9 ns | 17.1 ns | 25A | 20V | 200V | 200V | 5V | 144W Tc | 72.5mOhm | 200V | N-Channel | 1710pF @ 50V | 5 V | 72.5mOhm @ 15A, 10V | 5V @ 100μA | 25A Tc | 38nC @ 10V | 72.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP60R180P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r180p7xksa1-datasheets-1840.pdf | TO-220-3 | 3 | 18 Weeks | yes | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 72W Tc | TO-220AB | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | TO-252AA | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP6N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n95k5-datasheets-5012.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 1.25Ohm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | SINGLE | STP6N | 3 | 90W | 1 | FET General Purpose Power | R-PSFM-T3 | 12 ns | 12ns | 21 ns | 33 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 90W Tc | TO-220AB | 9A | 36A | 90 mJ | 950V | N-Channel | 450pF @ 100V | 1.25 Ω @ 3A, 10V | 5V @ 100μA | 9A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STP5NK80ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp5nk80z-datasheets-3437.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 2.4Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP5N | 3 | Single | 30W | 1 | FET General Purpose Power | 18 ns | 25ns | 30 ns | 45 ns | 4.3A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | 800V | N-Channel | 910pF @ 25V | 2.4 Ω @ 2.15A, 10V | 4.5V @ 100μA | 4.3A Tc | 45.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FDP42AN15A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp42an15a0-datasheets-1766.pdf | 150V | 35A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 19ns | 23 ns | 27 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | TO-220AB | 5A | 0.042Ohm | 90 mJ | 150V | N-Channel | 2150pF @ 25V | 42m Ω @ 12A, 10V | 4V @ 250μA | 5A Ta 35A Tc | 39nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| STP80NF55-08AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp80nf5508ag-datasheets-1775.pdf | TO-220-3 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STP80N | NOT SPECIFIED | 55V | 300W Tc | N-Channel | 3740pF @ 15V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF7N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf7n80k5-datasheets-1777.pdf | TO-220-3 Full Pack | 10.6mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STF7N | Single | 25W | FET General Purpose Power | 11.3 ns | 8.3ns | 22.2 ns | 23.7 ns | 6A | 30V | 25W Tc | 6A | 800V | N-Channel | 360pF @ 100V | 1.2 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 13.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi8n80k5-datasheets-5500.pdf | TO-220-3 Full Pack | 10.6mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | STF8N | Single | FET General Purpose Power | 12 ns | 14ns | 20 ns | 32 ns | 6A | 30V | 25W Tc | 6A | 800V | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 16.5nC @ 10V | 10V | ±30V |
