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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTQ22N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq22n50p-datasheets-2023.pdf | 500V | 22A | TO-3P-3, SC-65-3 | Lead Free | 3 | 5 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 50A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STF10NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu10nm60n-datasheets-5644.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STF10N | 3 | Single | 25W | 1 | FET General Purpose Power | 10 ns | 12ns | 15 ns | 32 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 3V | 25W Tc | TO-220AB | 8A | 0.55Ohm | 200 mJ | N-Channel | 540pF @ 50V | 550m Ω @ 4A, 10V | 4V @ 250μA | 10A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| STF14N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf14n80k5-datasheets-1955.pdf | TO-220-3 Full Pack | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF14 | NOT SPECIFIED | 800V | 30W Tc | N-Channel | 620pF @ 100V | 445m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP100N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp100n10f7-datasheets-1960.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 13 Weeks | No SVHC | 8MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP100 | Single | 150W | 1 | FET General Purpose Powers | 27 ns | 40ns | 16 ns | 46 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 150W Tc | TO-220AB | 400 mJ | 100V | N-Channel | 4369pF @ 50V | 8m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA60R190C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r190c6xksa1-datasheets-1966.pdf | TO-220-3 Full Pack | 10.36mm | 9.45mm | 4.57mm | Lead Free | 3 | 40 Weeks | No SVHC | 3 | yes | Tin | e3 | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 34W | 1 | Not Qualified | 15 ns | 11ns | 9 ns | 110 ns | 20.2A | 20V | SILICON | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 59A | 0.19Ohm | 418 mJ | 600V | N-Channel | 1400pF @ 100V | 3 V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF9Z30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf9z30pbf-datasheets-1976.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | 3 | 1 | Single | 74W | 1 | 12 ns | 110ns | 64 ns | 21 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 50V | -4V | 74W Tc | TO-220AB | 60A | -50V | P-Channel | 900pF @ 25V | 140m Ω @ 9.3A, 10V | 4V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFP9140PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp9140pbf-datasheets-1983.pdf | -100V | -21A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 200mOhm | 3 | No | 1 | Single | 180W | 1 | TO-247-3 | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | -21A | 20V | 100V | -4V | 180W Tc | 260 ns | 200mOhm | -100V | P-Channel | 1400pF @ 25V | -4 V | 200mOhm @ 13A, 10V | 4V @ 250μA | 21A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP6NK90ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb6nk90zt4-datasheets-1507.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | 3 | 12 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Matte Tin (Sn) - annealed | STP6N | 3 | Single | 30W | 1 | FET General Purpose Power | 17 ns | 45ns | 20 ns | 20 ns | 5.8A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 2Ohm | 900V | N-Channel | 1350pF @ 25V | 2 Ω @ 2.9A, 10V | 4.5V @ 100μA | 5.8A Tc | 60.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FDPF33N25T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdpf33n25t-datasheets-1883.pdf | 250V | 20A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 230ns | 120 ns | 75 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 37W Tc | TO-220AB | 0.094Ohm | 250V | N-Channel | 2135pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRFP3710PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfp3710pbf-datasheets-1891.pdf&product=infineontechnologies-irfp3710pbf-6842980 | 100V | 57A | TO-247-3 | 15.875mm | 24.99mm | 5.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 1 | Single | 180W | 1 | 175°C | 14 ns | 59ns | 48 ns | 58 ns | 57A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | TO-247AC | 320 ns | 0.025Ohm | 100V | N-Channel | 3000pF @ 25V | 4 V | 25m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFZ40PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz40pbf-datasheets-1903.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 126W | 1 | FET General Purpose Power | 15 ns | 25ns | 12 ns | 35 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 4V | 150W Tc | TO-220AB | 50A | 200A | 0.028Ohm | N-Channel | 1900pF @ 25V | 4 V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AOT11S60L | Alpha & Omega Semiconductor Inc. | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 3 | 16 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 178W | 1 | FET General Purpose Powers | R-PSFM-T3 | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 178W Tc | TO-220AB | 45A | 0.399Ohm | N-Channel | 545pF @ 100V | 399m Ω @ 3.8A, 10V | 4.1V @ 250μA | 11A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP13NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13nk60z-datasheets-6353.pdf | 600V | 13A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP13N | 3 | Single | 150W | 1 | FET General Purpose Power | 22 ns | 14ns | 12 ns | 61 ns | 13A | 30V | SILICON | SWITCHING | 3.75V | 150W Tc | TO-220AB | 52A | 0.55Ohm | 400 mJ | 600V | N-Channel | 2030pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 13A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP85N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu85n3lh5-datasheets-8058.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | No SVHC | 5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP85N | 3 | Single | 70W | 1 | FET General Purpose Power | 6 ns | 14ns | 10.8 ns | 23.6 ns | 80A | 22V | SILICON | DRAIN | SWITCHING | 2.5V | 70W Tc | TO-220AB | 30V | N-Channel | 1850pF @ 25V | 5.4m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 14nC @ 5V | 5V 10V | ±22V | ||||||||||||||||||||||||||||||||||||||||||
| SQP100P06-9M3L_GE3 | Vishay Siliconix | $7.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp100p069m3lge3-datasheets-1926.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 187W Tc | P-Channel | 12010pF @ 25V | 9.3mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 300nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB5620PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfb5620pbf-datasheets-1928.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 12 Weeks | No SVHC | 72.5MOhm | 3 | Tin | No | Single | 144W | 1 | TO-220AB | 1.71nF | 8.6 ns | 14.6ns | 9.9 ns | 17.1 ns | 25A | 20V | 200V | 200V | 5V | 144W Tc | 72.5mOhm | 200V | N-Channel | 1710pF @ 50V | 5 V | 72.5mOhm @ 15A, 10V | 5V @ 100μA | 25A Tc | 38nC @ 10V | 72.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF9630SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9630spbf-datasheets-1938.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3W | 1 | D2PAK | 700pF | 12 ns | 27ns | 24 ns | 28 ns | 6.5A | 20V | 200V | -4V | 3W Ta 74W Tc | 300mOhm | -200V | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFP9140NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfp9140npbf-datasheets-1943.pdf&product=infineontechnologies-irfp9140npbf-6842988 | -100V | -23A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 117mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 120W | 1 | Other Transistors | 15 ns | 67ns | 51 ns | -23A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | -4V | 140W Tc | TO-247AC | 220 ns | 76A | -100V | P-Channel | 1300pF @ 25V | -4 V | 117m Ω @ 13A, 10V | 4V @ 250μA | 23A Tc | 97nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| STF13N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf13n60dm2-datasheets-1854.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF13 | 600V | 25W Tc | N-Channel | 730pF @ 100V | 365m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFH24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfh24n60m2-datasheets-1857.pdf | TO-220-3 Full Pack | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STFH24N | NOT SPECIFIED | 18A | 600V | 3V | 35W Tc | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDP6060L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndb6060l-datasheets-1783.pdf | 60V | 48A | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 25mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Single | 100W | 1 | FET General Purpose Power | 15 ns | 320ns | 161 ns | 49 ns | 48A | 16V | SILICON | SWITCHING | 2V | 100W Tc | TO-220AB | 200 mJ | 60V | N-Channel | 2000pF @ 25V | 20m Ω @ 24A, 10V | 2V @ 250μA | 48A Tc | 60nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRFI4410ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfi4410zpbf-datasheets-1872.pdf | TO-220-3 Full Pack | 10.7442mm | 9.8044mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 47W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 27ns | 30 ns | 43 ns | 43A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 47W Tc | TO-220AB | 170A | 100V | N-Channel | 4910pF @ 50V | 9.3m Ω @ 26A, 10V | 4V @ 150μA | 43A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STF8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi8n80k5-datasheets-5500.pdf | TO-220-3 Full Pack | 10.6mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | STF8N | Single | FET General Purpose Power | 12 ns | 14ns | 20 ns | 32 ns | 6A | 30V | 25W Tc | 6A | 800V | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 16.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP3672 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdp3672-datasheets-1787.pdf | 105V | 41A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | 33MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 135W | 1 | FET General Purpose Power | 12 ns | 48ns | 27 ns | 24 ns | 41A | 20V | SILICON | DRAIN | SWITCHING | 135W Tc | TO-220AB | 5.9A | 48 mJ | 105V | N-Channel | 1670pF @ 25V | 33m Ω @ 41A, 10V | 4V @ 250μA | 5.9A Ta 41A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STFH13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfh13n60m2-datasheets-1797.pdf | TO-220-3 Full Pack | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | STFH13N | 11A | 600V | 3V | 25W Tc | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF13N50CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqpf13n50cf-datasheets-1801.pdf | 500V | 13A | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | 2.27g | No SVHC | 540mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 48W | 1 | FET General Purpose Power | 25 ns | 100ns | 100 ns | 130 ns | 13A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 48W Tc | TO-220AB | 52A | 500V | N-Channel | 2055pF @ 25V | 540m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| PSMN4R0-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn4r025ylc115-datasheets-1065.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 61W | 1 | 15.9 ns | 17.5ns | 9.9 ns | 24 ns | 84A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 61W Tc | MO-235 | 336A | 0.0058Ohm | 25V | N-Channel | 1407pF @ 12V | 4.5m Ω @ 20A, 10V | 1.95V @ 1mA | 84A Tc | 22.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| 2SJ652-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-2sj6521e-datasheets-1821.pdf | TO-220-3 Full Pack | Lead Free | 9 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Single | Other Transistors | 33 ns | 210ns | 180 ns | 310 ns | 28A | 20V | 60V | 2W Ta 30W Tc | -60V | P-Channel | 4360pF @ 20V | 38m Ω @ 14A, 10V | 28A Ta | 80nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB11N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | 500V | 11A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 520mOhm | 3 | No | 1 | Single | 170W | 1 | TO-220AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 4V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 4 V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| VN0550N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn0550n3g-datasheets-1833.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | Single | 1W | 1 | 10 ns | 15ns | 10 ns | 10 ns | 50mA | 20V | SILICON | SWITCHING | 1W Tc | 0.05A | 5 pF | 500V | N-Channel | 55pF @ 25V | 60 Ω @ 50mA, 10V | 4V @ 1mA | 50mA Tj | 5V 10V | ±20V |
