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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQPF13N50CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqpf13n50cf-datasheets-1801.pdf | 500V | 13A | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | 2.27g | No SVHC | 540mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 48W | 1 | FET General Purpose Power | 25 ns | 100ns | 100 ns | 130 ns | 13A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 48W Tc | TO-220AB | 52A | 500V | N-Channel | 2055pF @ 25V | 540m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| PSMN4R0-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn4r025ylc115-datasheets-1065.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 61W | 1 | 15.9 ns | 17.5ns | 9.9 ns | 24 ns | 84A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 61W Tc | MO-235 | 336A | 0.0058Ohm | 25V | N-Channel | 1407pF @ 12V | 4.5m Ω @ 20A, 10V | 1.95V @ 1mA | 84A Tc | 22.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ652-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-2sj6521e-datasheets-1821.pdf | TO-220-3 Full Pack | Lead Free | 9 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Single | Other Transistors | 33 ns | 210ns | 180 ns | 310 ns | 28A | 20V | 60V | 2W Ta 30W Tc | -60V | P-Channel | 4360pF @ 20V | 38m Ω @ 14A, 10V | 28A Ta | 80nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB11N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | 500V | 11A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 520mOhm | 3 | No | 1 | Single | 170W | 1 | TO-220AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 4V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 4 V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| VN0550N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn0550n3g-datasheets-1833.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | Single | 1W | 1 | 10 ns | 15ns | 10 ns | 10 ns | 50mA | 20V | SILICON | SWITCHING | 1W Tc | 0.05A | 5 pF | 500V | N-Channel | 55pF @ 25V | 60 Ω @ 50mA, 10V | 4V @ 1mA | 50mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R180P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r180p7xksa1-datasheets-1840.pdf | TO-220-3 | 3 | 18 Weeks | yes | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 72W Tc | TO-220AB | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | TO-252AA | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP054NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfp054npbf-datasheets-1740.pdf | 55V | 72A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 12mOhm | 3 | 5.45mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 130W | 1 | FET General Purpose Power | 11 ns | 66ns | 46 ns | 40 ns | 81A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | TO-247AC | 120 ns | 290A | 55V | N-Channel | 2900pF @ 25V | 4 V | 12m Ω @ 43A, 10V | 4V @ 250μA | 81A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP30NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb30nf20-datasheets-4929.pdf | 200V | 30A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | 75mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP30N | 3 | Single | 125W | 1 | FET General Purpose Power | 35 ns | 15.7ns | 8.8 ns | 38 ns | 30A | 20V | SILICON | SWITCHING | 125W Tc | TO-247 | 200V | N-Channel | 1597pF @ 25V | 75m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFB7440PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfb7440pbf-datasheets-1756.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 2.5MOhm | 3 | EAR99 | No | Single | 208W | 1 | FET General Purpose Power | 24 ns | 68ns | 115 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 3V | 143W Tc | TO-220AB | 24 ns | 772A | 40V | N-Channel | 4730pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP80N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std80n10f7-datasheets-9835.pdf | TO-220-3 | 10.4mm | 4.6mm | 15.75mm | Lead Free | 3 | 13 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | STP80N | 1 | Single | 110W | 2 | 19 ns | 32ns | 13 ns | 36 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 100V | N-Channel | 3100pF @ 50V | 10m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| VP2206N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/microchiptechnology-vp2206n2-datasheets-1811.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 4 ns | 16ns | 22 ns | 16 ns | 640mA | 20V | SILICON | SWITCHING | 60V | 740mW Tc | 0.64A | 0.9Ohm | 40 pF | -60V | P-Channel | 450pF @ 25V | 900m Ω @ 3.5A, 10V | 3.5V @ 10mA | 640mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4610PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs4610trlpbf-datasheets-5741.pdf | 100V | 73A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 14mOhm | 3 | 2.54mm | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | 18 ns | 87ns | 70 ns | 3 ns | 73A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 190W Tc | TO-220AB | 35 ns | 53 ns | 290A | 100V | N-Channel | 3550pF @ 50V | 4 V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQP50P03-07_GE3 | Vishay Siliconix | $2.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp50p0307ge3-datasheets-1693.pdf | TO-220-3 | 12 Weeks | TO-220AB | 30V | 150W Tc | P-Channel | 5380pF @ 25V | 7mOhm @ 30A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R180P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipaw60r180p7sxksa1-datasheets-1695.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 26W Tc | TO-220AB | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF620SPBF | Vishay Siliconix | $15.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 800MOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 200V | 3W Ta 50W Tc | 800mOhm | 200V | N-Channel | 260pF @ 25V | 4 V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R450P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa80r450p7xksa1-datasheets-1702.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 29W Tc | TO-220AB | 29A | 0.45Ohm | 29 mJ | N-Channel | 770pF @ 500V | 450m Ω @ 4.5A, 10V | 3.5V @ 220μA | 11A Tc | 24nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP45N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp45n10f7-datasheets-1708.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 15 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP45N | Single | 60W | 1 | 15 ns | 17ns | 8 ns | 24 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 100V | 60W Tc | TO-220AB | N-Channel | 1640pF @ 50V | 18m Ω @ 22.5A, 10V | 4.5V @ 250μA | 45A Tc | 25nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9530GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi9530gpbf-datasheets-1713.pdf | -100V | -7.7A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 300mOhm | 3 | No | 1 | Single | 38W | 1 | TO-220-3 | 860pF | 2.5kV | 12 ns | 52ns | 39 ns | 31 ns | -7.7A | 20V | 100V | -4V | 42W Tc | 300mOhm | -100V | P-Channel | 860pF @ 25V | -4 V | 300mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD18510KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | NO | CSD18510 | Single | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 250W Ta | TO-220AB | 200A | 400A | 0.0026Ohm | 551 pF | N-Channel | 11400pF @ 20V | 1.7m Ω @ 100A, 10V | 2.3V @ 250μA | 200A Ta | 75nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irlz44pbf-datasheets-1724.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 28mOhm | 3 | 1 | Single | 150W | 1 | TO-220AB | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 2V | 150W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 2 V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDP150N10A-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdp150n10af102-datasheets-1732.pdf | TO-220-3 | 10.36mm | 15.215mm | 4.672mm | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | Single | 91W | 1 | FET General Purpose Power | 13 ns | 16ns | 5 ns | 21 ns | 50A | 20V | 91W Tc | 100V | N-Channel | 1440pF @ 50V | 15m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF10N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf10n60nz-datasheets-1627.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 25 ns | 50ns | 50 ns | 70 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 5V | 38W Tc | TO-220AB | 40A | 0.75Ohm | 550 mJ | 600V | N-Channel | 1475pF @ 25V | 750m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| CSD19531KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19531 | 1 | Single | NOT SPECIFIED | 179W | 1 | FET General Purpose Power | 8.4 ns | 7.2ns | 4.1 ns | 16 ns | 105A | 20V | SILICON | DRAIN | SWITCHING | 100V | 2.7V | 214W Tc | 285A | 0.0088Ohm | N-Channel | 3870pF @ 50V | 7.7m Ω @ 60A, 10V | 3.3V @ 250μA | 100A Ta | 38nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP80P03P4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp80p03p4l04aksa1-datasheets-1642.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 1 | 17 ns | 11ns | 40 ns | 140 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 137W Tc | TO-220AB | 0.007Ohm | 410 mJ | P-Channel | 11300pF @ 25V | 4.4m Ω @ 80A, 10V | 2V @ 253μA | 80A Tc | 160nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB5615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb5615pbf-datasheets-1649.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 39MOhm | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 144W | 1 | FET General Purpose Power | Not Qualified | 8.6 ns | 23.1ns | 13.2 ns | 17.1 ns | 35A | 20V | SILICON | DRAIN | AMPLIFIER | 3V | 144W Tc | TO-220AB | 120 ns | 150V | N-Channel | 1750pF @ 50V | 3 V | 39m Ω @ 21A, 10V | 5V @ 100μA | 35A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| VP0550N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vp0550n3g-datasheets-1554.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 16 Weeks | 453.59237mg | 3 | EAR99 | Tin | e3 | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | Not Qualified | 10 ns | 8ns | 5 ns | 10 ns | -54mA | 20V | SILICON | SWITCHING | 500V | 1W Tc | 0.054A | -500V | P-Channel | 70pF @ 25V | 125 Ω @ 10mA, 10V | 4.5V @ 1mA | 54mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOD2N60A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | FET General Purpose Power | 2A | Single | 600V | 57W Tc | 2A | N-Channel | 295pF @ 25V | 4.7 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi13n60m2-datasheets-6173.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF13 | Single | 25W | 1 | 11 ns | 10ns | 9.5 ns | 41 ns | 11A | 25V | 600V | 25W Tc | 650V | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP9P25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp9p25-datasheets-1571.pdf&product=onsemiconductor-fqp9p25-6842931 | -250V | -9.4A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 620mOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 120W | 1 | Other Transistors | 20 ns | 150ns | 65 ns | 45 ns | 9.4A | 30V | SILICON | SWITCHING | 250V | 120W Tc | TO-220AB | 650 mJ | -250V | P-Channel | 1180pF @ 25V | 620m Ω @ 4.7A, 10V | 5V @ 250μA | 9.4A Tc | 38nC @ 10V | 10V | ±30V |
