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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD19531KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19531 | 1 | Single | NOT SPECIFIED | 179W | 1 | FET General Purpose Power | 8.4 ns | 7.2ns | 4.1 ns | 16 ns | 105A | 20V | SILICON | DRAIN | SWITCHING | 100V | 2.7V | 214W Tc | 285A | 0.0088Ohm | N-Channel | 3870pF @ 50V | 7.7m Ω @ 60A, 10V | 3.3V @ 250μA | 100A Ta | 38nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP80P03P4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp80p03p4l04aksa1-datasheets-1642.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 1 | 17 ns | 11ns | 40 ns | 140 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 137W Tc | TO-220AB | 0.007Ohm | 410 mJ | P-Channel | 11300pF @ 25V | 4.4m Ω @ 80A, 10V | 2V @ 253μA | 80A Tc | 160nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB5615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb5615pbf-datasheets-1649.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 39MOhm | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 144W | 1 | FET General Purpose Power | Not Qualified | 8.6 ns | 23.1ns | 13.2 ns | 17.1 ns | 35A | 20V | SILICON | DRAIN | AMPLIFIER | 3V | 144W Tc | TO-220AB | 120 ns | 150V | N-Channel | 1750pF @ 50V | 3 V | 39m Ω @ 21A, 10V | 5V @ 100μA | 35A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| VP0550N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vp0550n3g-datasheets-1554.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 16 Weeks | 453.59237mg | 3 | EAR99 | Tin | e3 | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | Not Qualified | 10 ns | 8ns | 5 ns | 10 ns | -54mA | 20V | SILICON | SWITCHING | 500V | 1W Tc | 0.054A | -500V | P-Channel | 70pF @ 25V | 125 Ω @ 10mA, 10V | 4.5V @ 1mA | 54mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOD2N60A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | FET General Purpose Power | 2A | Single | 600V | 57W Tc | 2A | N-Channel | 295pF @ 25V | 4.7 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi13n60m2-datasheets-6173.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF13 | Single | 25W | 1 | 11 ns | 10ns | 9.5 ns | 41 ns | 11A | 25V | 600V | 25W Tc | 650V | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfbc30pbf-datasheets-1456.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 2.2Ohm | 3 | No | 44A | 600V | 1 | Single | 74W | 1 | TO-220AB | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 3.6A | 20V | 600V | 4V | 74W Tc | 810 ns | 2.2Ohm | 600V | N-Channel | 660pF @ 25V | 4 V | 2.2Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STP25N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std25n10f7-datasheets-7561.pdf | TO-220-3 | Lead Free | 329.988449mg | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP25N | 1 | Single | NOT SPECIFIED | 9.8 ns | 14ns | 4.6 ns | 14.8 ns | 25A | 20V | 100V | 50W Tc | N-Channel | 920pF @ 50V | 35m Ω @ 12.5A, 10V | 4.5V @ 250μA | 25A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF12N50T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf12n50t-datasheets-1468.pdf | TO-220-3 Full Pack | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 165W | 1 | FET General Purpose Power | 24 ns | 50ns | 30 ns | 45 ns | 11.5A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 46A | 0.65Ohm | 456 mJ | 500V | N-Channel | 1315pF @ 25V | 650m Ω @ 6A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| DN2540N5-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2540n3g-datasheets-8163.pdf | TO-220-3 | 10.67mm | 22.86mm | 4.83mm | Lead Free | 3 | 5 Weeks | 6.000006g | No SVHC | 3 | EAR99 | LOW THRESHOLD | No | e3 | MATTE TIN | 1 | Single | 15W | 1 | FET General Purpose Power | 10 ns | 15ns | 20 ns | 15 ns | 500mA | 20V | SILICON | DRAIN | SWITCHING | -1.5V | 15W Tc | TO-220AB | 0.5A | 0.5A | 400V | N-Channel | 300pF @ 25V | 25 Ω @ 120mA, 0V | 500mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STP11N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp11n60dm2-datasheets-1490.pdf | TO-220-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STP11N | NOT SPECIFIED | 600V | 110W Tc | N-Channel | 614pF @ 100V | 420m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 16.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz20pbf-datasheets-1493.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100MOhm | 3 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | 260 | 3 | 1 | Single | 40 | 40W | 1 | FET General Purpose Power | 15 ns | 45ns | 15 ns | 20 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 4V | 40W Tc | TO-220AB | 60A | 5 mJ | 50V | N-Channel | 850pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP55NF06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp55nf06-datasheets-8143.pdf | 60V | 50A | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 18mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP55N | 3 | Single | 30W | 1 | FET General Purpose Power | 20 ns | 50ns | 15 ns | 36 ns | 50A | 20V | 60V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 200A | 60V | N-Channel | 1300pF @ 25V | 3 V | 18m Ω @ 27.5A, 10V | 4V @ 250μA | 50A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STP140N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp140n6f7-datasheets-1506.pdf | TO-220-3 | Lead Free | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP140 | NOT SPECIFIED | 80A | 60V | 158W Tc | N-Channel | 3100pF @ 10V | 3.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3415PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3415pbf-datasheets-1510.pdf | 150V | 43A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 42MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | No | 43A | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 150V | Single | 200W | 1 | FET General Purpose Power | 12 ns | 55ns | 69 ns | 71 ns | 43A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 390 ns | 590 mJ | 150V | N-Channel | 2400pF @ 25V | 4 V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FQP12P10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp12p10-datasheets-1518.pdf | -100V | -11.5A | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 75W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15 ns | 160ns | 60 ns | 35 ns | 11.5A | 30V | SILICON | SWITCHING | 100V | 75W Tc | TO-220AB | 46A | 0.29Ohm | 370 mJ | -100V | P-Channel | 800pF @ 25V | 290m Ω @ 5.75A, 10V | 4V @ 250μA | 11.5A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRF840SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf840spbf-datasheets-1527.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 5.08mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | No SVHC | 850mOhm | 3 | No | 1 | Single | 3.1W | 1 | 150°C | D2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 500V | 2V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| VN1206L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn1206lg-datasheets-1532.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | Not Qualified | 8 ns | 8ns | 12 ns | 18 ns | 230mA | 30V | SILICON | SWITCHING | 1W Tc | 6Ohm | 20 pF | 120V | N-Channel | 125pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 230mA Tj | 2.5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF9610PBF | Vishay Siliconix | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9610pbf-datasheets-1546.pdf | -200V | -1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | No | 200V | 1 | Single | 20W | 1 | TO-220AB | 170pF | 8 ns | 15ns | 8 ns | 10 ns | -1.8A | 20V | 200V | -4V | 20W Tc | 360 ns | 3Ohm | -200V | P-Channel | 170pF @ 25V | -4 V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLZ34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irlz34pbf-datasheets-1446.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 2V | 88W Tc | 50mOhm | 60V | N-Channel | 1600pF @ 25V | 2 V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTP08N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixtp08n100d2-datasheets-1351.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 60W Tc | TO-220AB | 1kV | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 800mA Tc | 14.6nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3564(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | Copper, Silver, Tin | No | 40W | 1 | TO-220SIS | 700pF | 20ns | 35 ns | 3A | 30V | 900V | 40W Tc | N-Channel | 700pF @ 25V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 17nC @ 10V | 4.3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7437PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfb7437pbf-datasheets-1358.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 2MOhm | 3 | EAR99 | No | Single | 230W | 1 | FET General Purpose Power | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3V | 230W Tc | TO-220AB | 30 ns | 40V | N-Channel | 7330pF @ 25V | 3 V | 2m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4823DY-T1-GE3 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4823dyt1ge3-datasheets-0720.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.7W | 1 | 18 ns | 40ns | 10 ns | 18 ns | 3.3A | 12V | SILICON | 20V | 1.7W Ta 2.8W Tc | -20V | P-Channel | 660pF @ 10V | 108m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 4.1A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| AOT10N60 | Alpha & Omega Semiconductor Inc. | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 250W | 1 | FET General Purpose Power | 10A | 30V | Single | 600V | 250W Tc | N-Channel | 1600pF @ 25V | 750m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2807PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf2807pbf-datasheets-1378.pdf | 75V | 82A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 13mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | 250 | Single | 30 | 230W | 1 | FET General Purpose Power | 13 ns | 64ns | 48 ns | 49 ns | 82A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | TO-220AB | 150 ns | 75A | 280A | 75V | N-Channel | 3820pF @ 25V | 4 V | 13m Ω @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf640pbf-datasheets-1387.pdf&product=vishaysiliconix-irf640pbf-6842900 | 200V | 18A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | 200V | 4V | 125W Tc | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 2 V | 180mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQPF22P10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fqpf22p10-datasheets-1395.pdf | -100V | -13.2A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 260 | Single | 45W | 1 | Other Transistors | 4.8 ns | 170ns | 110 ns | 60 ns | 13.2A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 45W Tc | TO-220AB | 52.8A | -100V | P-Channel | 1500pF @ 25V | 125m Ω @ 6.6A, 10V | 4V @ 250μA | 13.2A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| HUF76423P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-huf76423p3-datasheets-1403.pdf | 60V | 33A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 30mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 85W | 1 | FET General Purpose Power | 7 ns | 85ns | 76 ns | 47 ns | 35A | 16V | SILICON | DRAIN | SWITCHING | 3V | 85W Tc | TO-220AB | 60V | N-Channel | 1060pF @ 25V | 30m Ω @ 35A, 10V | 3V @ 250μA | 35A Tc | 34nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IXTP08N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixty08n50d2-datasheets-2799.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 800mA | 20V | SILICON | DRAIN | AMPLIFIER | 60W Tc | TO-220AB | 500V | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 800mA Tc | 12.7nC @ 5V | Depletion Mode | ±20V |
