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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP33N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp33n25-datasheets-1593.pdf | 250V | 33A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 6 Weeks | 1.8g | No SVHC | 94MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | AVALANCHE RATED | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 235W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 230ns | 120 ns | 75 ns | 33A | 30V | SILICON | SWITCHING | 5V | 235W Tc | TO-220AB | 250V | N-Channel | 2135pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF9640SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9640strlpbf-datasheets-0346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 500mOhm | 3 | 1 | Single | 125W | 1 | D2PAK | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | -11A | 20V | 200V | -4V | 3W Ta 125W Tc | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R6N50D2 | IXYS | $42.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50d2-datasheets-1609.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | 3 | yes | UL RECOGNIZED | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 100W Tc | N-Channel | 645pF @ 25V | 2.3 Ω @ 800mA, 0V | 1.6A Tc | 23.7nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CEDM8004 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cedm8004trpbfree-datasheets-0461.pdf | SC-101, SOT-883 | 20 Weeks | YES | Other Transistors | Single | 30V | 100mW Ta | 0.45A | P-Channel | 55pF @ 25V | 1.1 Ω @ 430mA, 4.5V | 1V @ 250μA | 450mA Ta | 0.88nC @ 4.5V | 1.8V 4.5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP140NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfp140npbf-datasheets-1616.pdf&product=infineontechnologies-irfp140npbf-6842937 | 100V | 27A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 52mOhm | 3 | EAR99 | AVALANCHE RATED | No | Single | 94W | 1 | FET General Purpose Power | 8.2 ns | 39ns | 33 ns | 44 ns | 33A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-247AC | 250 ns | 100V | N-Channel | 1400pF @ 25V | 4 V | 52m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDPF10N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf10n60nz-datasheets-1627.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 25 ns | 50ns | 50 ns | 70 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 5V | 38W Tc | TO-220AB | 40A | 0.75Ohm | 550 mJ | 600V | N-Channel | 1475pF @ 25V | 750m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| IRF3415PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3415pbf-datasheets-1510.pdf | 150V | 43A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 42MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | No | 43A | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 150V | Single | 200W | 1 | FET General Purpose Power | 12 ns | 55ns | 69 ns | 71 ns | 43A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 390 ns | 590 mJ | 150V | N-Channel | 2400pF @ 25V | 4 V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FQP12P10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp12p10-datasheets-1518.pdf | -100V | -11.5A | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 75W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15 ns | 160ns | 60 ns | 35 ns | 11.5A | 30V | SILICON | SWITCHING | 100V | 75W Tc | TO-220AB | 46A | 0.29Ohm | 370 mJ | -100V | P-Channel | 800pF @ 25V | 290m Ω @ 5.75A, 10V | 4V @ 250μA | 11.5A Tc | 27nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRF840SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf840spbf-datasheets-1527.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 5.08mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | No SVHC | 850mOhm | 3 | No | 1 | Single | 3.1W | 1 | 150°C | D2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 500V | 2V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| VN1206L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn1206lg-datasheets-1532.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | Not Qualified | 8 ns | 8ns | 12 ns | 18 ns | 230mA | 30V | SILICON | SWITCHING | 1W Tc | 6Ohm | 20 pF | 120V | N-Channel | 125pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 230mA Tj | 2.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF9610PBF | Vishay Siliconix | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9610pbf-datasheets-1546.pdf | -200V | -1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | No | 200V | 1 | Single | 20W | 1 | TO-220AB | 170pF | 8 ns | 15ns | 8 ns | 10 ns | -1.8A | 20V | 200V | -4V | 20W Tc | 360 ns | 3Ohm | -200V | P-Channel | 170pF @ 25V | -4 V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLZ34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irlz34pbf-datasheets-1446.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 2V | 88W Tc | 50mOhm | 60V | N-Channel | 1600pF @ 25V | 2 V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfbc30pbf-datasheets-1456.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 2.2Ohm | 3 | No | 44A | 600V | 1 | Single | 74W | 1 | TO-220AB | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 3.6A | 20V | 600V | 4V | 74W Tc | 810 ns | 2.2Ohm | 600V | N-Channel | 660pF @ 25V | 4 V | 2.2Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STP25N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std25n10f7-datasheets-7561.pdf | TO-220-3 | Lead Free | 329.988449mg | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP25N | 1 | Single | NOT SPECIFIED | 9.8 ns | 14ns | 4.6 ns | 14.8 ns | 25A | 20V | 100V | 50W Tc | N-Channel | 920pF @ 50V | 35m Ω @ 12.5A, 10V | 4.5V @ 250μA | 25A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF12N50T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf12n50t-datasheets-1468.pdf | TO-220-3 Full Pack | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 165W | 1 | FET General Purpose Power | 24 ns | 50ns | 30 ns | 45 ns | 11.5A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 46A | 0.65Ohm | 456 mJ | 500V | N-Channel | 1315pF @ 25V | 650m Ω @ 6A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| DN2540N5-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2540n3g-datasheets-8163.pdf | TO-220-3 | 10.67mm | 22.86mm | 4.83mm | Lead Free | 3 | 5 Weeks | 6.000006g | No SVHC | 3 | EAR99 | LOW THRESHOLD | No | e3 | MATTE TIN | 1 | Single | 15W | 1 | FET General Purpose Power | 10 ns | 15ns | 20 ns | 15 ns | 500mA | 20V | SILICON | DRAIN | SWITCHING | -1.5V | 15W Tc | TO-220AB | 0.5A | 0.5A | 400V | N-Channel | 300pF @ 25V | 25 Ω @ 120mA, 0V | 500mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP11N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp11n60dm2-datasheets-1490.pdf | TO-220-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STP11N | NOT SPECIFIED | 600V | 110W Tc | N-Channel | 614pF @ 100V | 420m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 16.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz20pbf-datasheets-1493.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100MOhm | 3 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | 260 | 3 | 1 | Single | 40 | 40W | 1 | FET General Purpose Power | 15 ns | 45ns | 15 ns | 20 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 4V | 40W Tc | TO-220AB | 60A | 5 mJ | 50V | N-Channel | 850pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP55NF06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp55nf06-datasheets-8143.pdf | 60V | 50A | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 18mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP55N | 3 | Single | 30W | 1 | FET General Purpose Power | 20 ns | 50ns | 15 ns | 36 ns | 50A | 20V | 60V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 200A | 60V | N-Channel | 1300pF @ 25V | 3 V | 18m Ω @ 27.5A, 10V | 4V @ 250μA | 50A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP140N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp140n6f7-datasheets-1506.pdf | TO-220-3 | Lead Free | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP140 | NOT SPECIFIED | 80A | 60V | 158W Tc | N-Channel | 3100pF @ 10V | 3.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF22P10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fqpf22p10-datasheets-1395.pdf | -100V | -13.2A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 260 | Single | 45W | 1 | Other Transistors | 4.8 ns | 170ns | 110 ns | 60 ns | 13.2A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 45W Tc | TO-220AB | 52.8A | -100V | P-Channel | 1500pF @ 25V | 125m Ω @ 6.6A, 10V | 4V @ 250μA | 13.2A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| HUF76423P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-huf76423p3-datasheets-1403.pdf | 60V | 33A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 30mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 85W | 1 | FET General Purpose Power | 7 ns | 85ns | 76 ns | 47 ns | 35A | 16V | SILICON | DRAIN | SWITCHING | 3V | 85W Tc | TO-220AB | 60V | N-Channel | 1060pF @ 25V | 30m Ω @ 35A, 10V | 3V @ 250μA | 35A Tc | 34nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IXTP08N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixty08n50d2-datasheets-2799.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 800mA | 20V | SILICON | DRAIN | AMPLIFIER | 60W Tc | TO-220AB | 500V | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 800mA Tc | 12.7nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN3205N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn3205n8g-datasheets-6319.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 10 ns | 15ns | 25 ns | 25 ns | 1.2A | 20V | SILICON | SWITCHING | 1W Tc | 50V | N-Channel | 300pF @ 25V | 300m Ω @ 3A, 10V | 2.4V @ 10mA | 1.2A Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP17NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std17nf25-datasheets-9649.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP17N | 3 | Single | 90W | 1 | FET General Purpose Power | 8.8 ns | 17.2ns | 8.8 ns | 21 ns | 8.5A | 20V | SILICON | SWITCHING | 90W Tc | TO-220AB | 68A | 250V | N-Channel | 1000pF @ 25V | 3 V | 165m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 29.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP147N12N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb144n12n3gatma1-datasheets-7308.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 107W | 1 | Not Qualified | 16 ns | 9ns | 4 ns | 24 ns | 56A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 107W Tc | TO-220AB | 224A | 90 mJ | N-Channel | 3220pF @ 60V | 14.7m Ω @ 56A, 10V | 4V @ 61μA | 56A Ta | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQD7N20LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd7n20ltm-datasheets-1057.pdf | 200V | 5.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 125ns | 65 ns | 20 ns | 5.5A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 45W Tc | 22A | 0.78Ohm | 200V | N-Channel | 500pF @ 25V | 750m Ω @ 2.75A, 10V | 2V @ 250μA | 5.5A Tc | 9nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTP08N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixtp08n100d2-datasheets-1351.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 60W Tc | TO-220AB | 1kV | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 800mA Tc | 14.6nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3564(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | Copper, Silver, Tin | No | 40W | 1 | TO-220SIS | 700pF | 20ns | 35 ns | 3A | 30V | 900V | 40W Tc | N-Channel | 700pF @ 25V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 17nC @ 10V | 4.3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7437PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfb7437pbf-datasheets-1358.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 2MOhm | 3 | EAR99 | No | Single | 230W | 1 | FET General Purpose Power | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3V | 230W Tc | TO-220AB | 30 ns | 40V | N-Channel | 7330pF @ 25V | 3 V | 2m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V |
