Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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LP0701N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-lp0701lgg-datasheets-3054.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 17 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 20 ns | 20ns | 30 ns | 30 ns | 500mA | 10V | SILICON | SWITCHING | 16.5V | 1W Tc | 0.5A | 60 pF | -16.5V | P-Channel | 250pF @ 15V | 1.5 Ω @ 300mA, 5V | 1V @ 1mA | 500mA Tj | 2V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
DMN3008SFG-7 | Diodes Incorporated | $0.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3008sfg7-datasheets-1084.pdf | 8-PowerVDFN | 23 Weeks | 72.007789mg | 4.6mOhm | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 5.7 ns | 14ns | 28.4 ns | 63.7 ns | 17.6A | 20V | 30V | 900mW Ta | N-Channel | 3690pF @ 10V | 4.6m Ω @ 13.5A, 10V | 2.3V @ 250μA | 17.6A Ta | 86nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK7M10-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m1040ex-datasheets-1079.pdf | SOT-1210, 8-LFPAK33 | 900μm | 4 | 26 Weeks | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 62W | 1 | 175°C | R-PSSO-G4 | 5.7 ns | 14.4 ns | 56A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62W Tc | 224A | 30.6 mJ | 40V | N-Channel | 1231pF @ 25V | 10m Ω @ 15A, 10V | 4V @ 1mA | 56A Tc | 19.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
STP90NF03L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp90nf03l-datasheets-1095.pdf | 30V | 90A | TO-220-3 | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP90N | 3 | Single | 150W | 1 | FET General Purpose Power | R-PSFM-T3 | 30 ns | 200ns | 105 ns | 50 ns | 90A | 20V | SILICON | SWITCHING | 150W Tc | TO-220AB | 360A | 0.0065Ohm | 30V | N-Channel | 2700pF @ 25V | 6.5m Ω @ 45A, 10V | 2.5V @ 250μA | 90A Tc | 47nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPP039N04LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipp039n04lgxksa1-datasheets-1102.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | 10 ns | 5.4ns | 6 ns | 38 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 94W Tc | TO-220AB | 400A | 0.0052Ohm | 60 mJ | N-Channel | 6100pF @ 25V | 3.9m Ω @ 80A, 10V | 2V @ 45μA | 80A Tc | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
NVD3055L170T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntd3055l170t4g-datasheets-4382.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 3 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 9.7 ns | 69ns | 38 ns | 10 ns | 9A | 15V | SILICON | DRAIN | SWITCHING | 1.5W Ta 28.5W Tj | 9A | 27A | 60V | N-Channel | 275pF @ 25V | 170m Ω @ 4.5A, 5V | 2V @ 250μA | 9A Ta | 10nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||
SQJ148EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj148ept1ge3-datasheets-0932.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 45W Tc | 14A | 40A | 0.033Ohm | 6 mJ | N-Channel | 600pF @ 25V | 33m Ω @ 7A, 10V | 2.5V @ 250μA | 15A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
RF4E075ATTCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/rohm-rf4e075attcr-datasheets-8511.pdf | 8-PowerUDFN | 6 | 10 Weeks | 8 | EAR99 | not_compliant | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N6 | 7.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 30A | 0.0317Ohm | 10.6 mJ | P-Channel | 1000pF @ 15V | 21.7m Ω @ 7.5A, 10V | 2.5V @ 1mA | 7.5A Ta | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
AON6360 | Alpha & Omega Semiconductor Inc. | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 1.59nF | 85A | 30V | 6.2W Ta 42W Tc | N-Channel | 1590pF @ 15V | 3mOhm @ 20A, 10V | 2.2V @ 250μA | 36A Ta 85A Tc | 24nC @ 10V | 3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK9Y22-30B,115 | Nexperia USA Inc. | $0.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9y2230b115-datasheets-0981.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 1 | 8.7 ns | 18.5ns | 23 ns | 42 ns | 37.7A | 15V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 59.4W Tc | MO-235 | N-Channel | 940pF @ 25V | 19m Ω @ 20A, 10V | 2V @ 1mA | 37.7A Tc | 10.5nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||
CPC3710CTR | IXYS Integrated Circuits Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-cpc3710ctr-datasheets-8516.pdf | TO-243AA | 8 Weeks | 130.492855mg | 4 | 1 | 1.4W | 1 | SOT-89 | 350pF | 220mA | 20V | 250V | 1.4W Ta | 10Ohm | 250V | N-Channel | 350pF @ 25V | 10Ohm @ 220mA, 0V | Depletion Mode | 10 Ω | 0V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4178DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4178dyt1ge3-datasheets-0934.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 21mOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | 8 | 1 | Single | 2.4W | 1 | 20 ns | 10 ns | 12 ns | 12A | 25V | SILICON | SWITCHING | 30V | 30V | 2.8V | 2.4W Ta 5W Tc | N-Channel | 405pF @ 15V | 1.4 V | 21m Ω @ 8.4A, 10V | 2.8V @ 250μA | 12A Tc | 12nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
DMN6040SVTQ-7 | Diodes Incorporated | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn6040svtq7-datasheets-0877.pdf | SOT-23-6 Thin, TSOT-23-6 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 5A | 60V | 1.2W Ta | N-Channel | 1287pF @ 25V | 44m Ω @ 4.3A, 10V | 3V @ 250μA | 5A Ta | 22.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R5-25MLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn3r525mldx-datasheets-0912.pdf | SC-100, SOT-669 | 4 | 26 Weeks | HIGH RELIABILITY | IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 65W Tc | 405A | 0.00372Ohm | 106.6 mJ | N-Channel | 1334pF @ 12V | 3.72m Ω @ 25A, 10V | 2.2V @ 1mA | 70A Tc | 18.9nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
SQ3426AEEV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sq3426aeevt1ge3-datasheets-1035.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | 6-TSOP | 7 ns | 10ns | 4 ns | 20 ns | 7A | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFS5C680NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c680nlt1g-datasheets-1032.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 60V | 3.4W Ta 24W Tc | N-Channel | 330pF @ 25V | 27.5m Ω @ 7.5A, 10V | 2.2V @ 13μA | 8.1A Ta 21A Tc | 5.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTNS3190NZT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntns3190nzt5g-datasheets-0829.pdf | 3-XFDFN | 3 | 7 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | NO LEAD | 1 | 1 | 18 ns | 35ns | 110 ns | 201 ns | 224mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | 120mW Ta | N-Channel | 15.8pF @ 15V | 1.4 Ω @ 100mA, 4.5V | 1V @ 250μA | 224mA Ta | 0.7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
RF4E080BNTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/rohmsemiconductor-rf4e080bntr-datasheets-0861.pdf | 8-PowerUDFN | Lead Free | 6 | 20 Weeks | 8 | EAR99 | DUAL | NO LEAD | 260 | 1 | Single | 10 | 1 | S-PDSO-N6 | 8 ns | 10ns | 7 ns | 33 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 8A | 32A | 0.0246Ohm | 30V | N-Channel | 660pF @ 15V | 17.6m Ω @ 8A, 10V | 2V @ 250μA | 8A Ta | 14.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
DMP10H400SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp10h400sk313-datasheets-0844.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 17 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | 9.1 ns | 14.9ns | 34.4 ns | 57.4 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 100V | 42W Tc | 9A | -100V | P-Channel | 1239pF @ 25V | 240m Ω @ 5A, 10V | 3V @ 250μA | 9A Tc | 17.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BUK7Y41-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y4180ex-datasheets-0607.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | SINGLE | GULL WING | 4 | 1 | 1 | 5.3 ns | 6.6ns | 7.4 ns | 11 ns | 25A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 64W Tc | MO-235 | 23.8 mJ | 80V | N-Channel | 1119pF @ 25V | 41m Ω @ 5A, 10V | 4V @ 1mA | 25A Tc | 16.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SQ3419AEEV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq3419aeevt1ge3-datasheets-0873.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 5W | 1 | 175°C | R-PDSO-G6 | 9 ns | 26 ns | -6.9A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 5W Tc | -40V | P-Channel | 975pF @ 20V | 61m Ω @ 2.5A, 10V | 2.5V @ 250μA | 6.9A Tc | 12.5nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
DMP1080UCB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp1080ucb47-datasheets-0681.pdf | 4-UFBGA, WLBGA | 4 | 15 Weeks | No SVHC | 4 | yes | EAR99 | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 1 | 40 | 1 | 16.7 ns | 20.6ns | 28.4 ns | 38.4 ns | 3.3A | -6V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 12V | 820mW Ta | 3A | 90 pF | -12V | P-Channel | 350pF @ 6V | 80m Ω @ 500mA, 4.5V | 1V @ 250μA | 3.3A Ta | 5nC @ 4.5V | 1.5V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||
SI3464DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3464dvt1ge3-datasheets-0715.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 2W | 1 | FET General Purpose Powers | 3 ns | 12ns | 8 ns | 22 ns | 8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 3.6W Tc | 8A | 0.024Ohm | 20V | N-Channel | 1065pF @ 10V | 450 mV | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 8A Tc | 18nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
DMN10H170SVTQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn10h170svtq7-datasheets-0612.pdf | SOT-23-6 Thin, TSOT-23-6 | 18 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 2.6A | 100V | 1.2W Ta | N-Channel | 1167pF @ 25V | 160m Ω @ 5A, 10V | 3V @ 250μA | 2.6A Ta | 9.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA436DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia436djt1ge3-datasheets-0775.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 3.5W | 1 | FET General Purpose Power | S-PDSO-N3 | 11 ns | 10ns | 8 ns | 30 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 350mV | 3.5W Ta 19W Tc | 50A | 0.0094Ohm | 8V | N-Channel | 1508pF @ 4V | 9.4m Ω @ 15.7A, 4.5V | 800mV @ 250μA | 12A Tc | 25.2nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||
NTLJS4114NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | µCool™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntljs4114nt1g-datasheets-0157.pdf | 6-WDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 9 Weeks | No SVHC | 35MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | C BEND | 260 | 6 | Single | 40 | 700mW | 1 | FET General Purpose Power | 5 ns | 9ns | 9 ns | 20 ns | 7.8A | 12V | SILICON | DRAIN | SWITCHING | 550mV | 700mW Ta | 28A | 30V | N-Channel | 650pF @ 15V | 550 mV | 35m Ω @ 2A, 4.5V | 1V @ 250μA | 3.6A Ta | 13nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||
NVTFS4C10NWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvtfs4c10nwftag-datasheets-0684.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 10 hours ago) | yes | not_compliant | e3 | Tin (Sn) | FET General Purpose Power | 47A | Single | 30V | 3W Ta 28W Tc | N-Channel | 993pF @ 15V | 7.4m Ω @ 30A, 10V | 2.2V @ 250μA | 15.3A Ta 47A Tc | 19.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI8851EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8851edbt2e1-datasheets-0756.pdf | 30-XFBGA | 30 | 21 Weeks | Unknown | 30 | EAR99 | BOTTOM | BALL | 260 | SI8851 | 40 | 1 | 35 ns | 40ns | 35 ns | 115 ns | 16.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | -1V | 660mW Ta | 80A | 0.0086Ohm | 20V | P-Channel | 6900pF @ 10V | 8m Ω @ 7A, 4.5V | 1V @ 250μA | 7.7A Ta | 180nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
BUK7Y102-100B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk7y102100b115-datasheets-0496.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 60W | 1 | 11 ns | 4.8ns | 5.4 ns | 25 ns | 15A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tc | MO-235 | 60A | 35 mJ | N-Channel | 779pF @ 25V | 102m Ω @ 5A, 10V | 4V @ 1mA | 15A Tc | 12.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BUK7M15-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m1560ex-datasheets-0803.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101; IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | 42.9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 62W Tc | 43A | 171A | 0.015Ohm | 26.5 mJ | N-Channel | 1262pF @ 25V | 15m Ω @ 10A, 10V | 4V @ 1mA | 42.9A Tc | 19.4nC @ 10V | 10V | ±20V |
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