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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFB7437PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfb7437pbf-datasheets-1358.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 2MOhm | 3 | EAR99 | No | Single | 230W | 1 | FET General Purpose Power | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3V | 230W Tc | TO-220AB | 30 ns | 40V | N-Channel | 7330pF @ 25V | 3 V | 2m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4823DY-T1-GE3 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4823dyt1ge3-datasheets-0720.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.7W | 1 | 18 ns | 40ns | 10 ns | 18 ns | 3.3A | 12V | SILICON | 20V | 1.7W Ta 2.8W Tc | -20V | P-Channel | 660pF @ 10V | 108m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 4.1A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| AOT10N60 | Alpha & Omega Semiconductor Inc. | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 250W | 1 | FET General Purpose Power | 10A | 30V | Single | 600V | 250W Tc | N-Channel | 1600pF @ 25V | 750m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2807PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf2807pbf-datasheets-1378.pdf | 75V | 82A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 13mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | 250 | Single | 30 | 230W | 1 | FET General Purpose Power | 13 ns | 64ns | 48 ns | 49 ns | 82A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | TO-220AB | 150 ns | 75A | 280A | 75V | N-Channel | 3820pF @ 25V | 4 V | 13m Ω @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF644PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf644pbf-datasheets-1274.pdf | 250V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 4V | 125W Tc | 500 ns | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 4 V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF3315PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf3315pbf-datasheets-1282.pdf | 150V | 27A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 82mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 136W | 1 | FET General Purpose Power | 9.6 ns | 32ns | 38 ns | 49 ns | 27A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 94W Tc | TO-220AB | 260 ns | 84A | 150V | N-Channel | 1300pF @ 25V | 4 V | 70m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| VP3203N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vp3203n3g-datasheets-1294.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 14 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) - annealed | BOTTOM | 1 | Single | 740mW | 1 | Other Transistors | 10 ns | 15ns | 15 ns | 25 ns | 650mA | 20V | SILICON | SWITCHING | 30V | 740mW Ta | 0.65A | 0.6Ohm | 60 pF | -30V | P-Channel | 300pF @ 25V | 600m Ω @ 3A, 10V | 3.5V @ 10mA | 650mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF1310NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf1310npbf-datasheets-1300.pdf | 100V | 42A | TO-220-3 | 10.5156mm | 19.8mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | 1 | Single | 160W | 1 | FET General Purpose Power | 175°C | 11 ns | 56ns | 40 ns | 45 ns | 42A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2V | 160W Tc | TO-220AB | 270 ns | 420 mJ | 100V | N-Channel | 1900pF @ 25V | 4 V | 36m Ω @ 22A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9Z34SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irf9z34strrpbf-datasheets-5811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 140mOhm | 3 | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | SILICON | SWITCHING | 60V | 60V | -4V | 3.7W Ta 88W Tc | 72A | P-Channel | 1100pF @ 25V | 140m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA086N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa086n10n3gxksa1-datasheets-1318.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 37.5W | 1 | Not Qualified | 16 ns | 10ns | 8 ns | 27 ns | 45A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 37.5W Tc | TO-220AB | 0.0086Ohm | N-Channel | 3980pF @ 50V | 8.6m Ω @ 45A, 10V | 3.5V @ 75μA | 45A Tc | 55nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF840BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840bpbf-datasheets-1324.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | SWITCHING | 5V | 156W Tc | TO-220AB | 0.85Ohm | 29 mJ | 500V | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP4P40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp4p40-datasheets-1330.pdf | -400V | -3.5A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 85W | 1 | Other Transistors | 13 ns | 55ns | 37 ns | 35 ns | 3.5A | 30V | SILICON | SWITCHING | 400V | -5V | 85W Tc | TO-220AB | 260 mJ | -400V | P-Channel | 680pF @ 25V | 3.1 Ω @ 1.75A, 10V | 5V @ 250μA | 3.5A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF9Z24SPBF | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z24spbf-datasheets-1340.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 280mOhm | 3 | No | 1 | Single | 60W | 1 | D2PAK | 570pF | 13 ns | 68ns | 29 ns | 15 ns | 11A | 20V | 60V | -4V | 3.7W Ta 60W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | -4 V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N50CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-fqpf9n50cf-datasheets-1345.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 850MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 44W | 1 | FET General Purpose Power | Not Qualified | 18 ns | 65ns | 64 ns | 93 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 44W Tc | TO-220AB | 9A | 500V | N-Channel | 1030pF @ 25V | 850m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STFH10N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfh10n60m2-datasheets-1250.pdf | TO-220-3 Full Pack | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STFH10N | NOT SPECIFIED | 7.5A | 600V | 3V | 25W Tc | N-Channel | 400pF @ 100V | 600m Ω @ 9A, 10V | 4V @ 250μA | 7.5A Tc | 13.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4019PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb4019pbf-datasheets-1260.pdf | TO-220-3 | 10.6426mm | 19.8mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 95MOhm | 3 | EAR99 | No | 1 | Single | 80mW | 1 | FET General Purpose Power | 175°C | 7 ns | 13ns | 7.8 ns | 12 ns | 17A | 20V | 150V | SILICON | DRAIN | AMPLIFIER | 4.9V | 80W Tc | TO-220AB | 96 ns | 150V | N-Channel | 800pF @ 50V | 4.9 V | 95m Ω @ 10A, 10V | 4.9V @ 50μA | 17A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TP0604N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/microchiptechnology-tp0604n3g-datasheets-1268.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 7 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | Other Transistors | 5 ns | 7ns | 6 ns | 10 ns | 430mA | 20V | SILICON | SWITCHING | 40V | 740mW Ta | 0.75A | 2Ohm | 60 pF | -40V | P-Channel | 150pF @ 20V | 2 Ω @ 1A, 10V | 2.4V @ 1mA | 430mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NVTFS4C08NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvtfs4c08ntag-datasheets-1127.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 31W | 1 | FET General Purpose Power | S-PDSO-F5 | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.1W Ta 31W Tc | 55A | 253A | 0.0059Ohm | 20 mJ | N-Channel | 1113pF @ 15V | 5.9m Ω @ 30A, 10V | 2.2V @ 250μA | 17A Ta | 18.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C468NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c468nt1g-datasheets-1076.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.5W Ta 28W Tc | N-Channel | 420pF @ 25V | 12m Ω @ 10A, 10V | 3.5V @ 250μA | 12A Ta 35A Tc | 7.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M6R6-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m6r630ex-datasheets-0814.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 75W Tc | 309A | 0.0066Ohm | 53 mJ | N-Channel | 2001pF @ 25V | 5.3m Ω @ 20A, 10V | 2.1V @ 1mA | 70A Tc | 18nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R1-25MLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn6r125mldx-datasheets-9979.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | HIGH RELIABILITY | IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 42W Tc | 235A | 0.0103Ohm | 51.3 mJ | N-Channel | 702pF @ 12V | 7.24m Ω @ 15A, 10V | 2.2V @ 1mA | 60A Tc | 10.7nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740bpbf-datasheets-1180.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | SILICON | SWITCHING | 400V | 400V | 5V | 147W Tc | TO-220AB | 0.6Ohm | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irl510pbf-datasheets-1186.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 540mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 2V | 43W Tc | 130 ns | 540mOhm | 100V | N-Channel | 250pF @ 25V | 2 V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| FQP17P10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fqp17p10-datasheets-1194.pdf&product=onsemiconductor-fqp17p10-6842870 | -100V | -16.5A | TO-220-3 | 10.1mm | 20.4mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 190MOhm | 3 | 2.54mm | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 1 | Single | 100W | 1 | Other Transistors | 175°C | 17 ns | 200ns | 100 ns | 45 ns | -16.5A | 30V | -100V | SILICON | SWITCHING | 100V | -4V | 100W Tc | TO-220AB | 66A | 580 mJ | -100V | P-Channel | 1100pF @ 25V | -4 V | 190m Ω @ 8.25A, 10V | 4V @ 250μA | 16.5A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| DN2535N5-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microchiptechnology-dn2535n5g-datasheets-1204.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 3 | 5 Weeks | 6.000006g | No SVHC | 3 | EAR99 | LOW THRESHOLD | Tin | e3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 15W | 1 | FET General Purpose Power | Not Qualified | 10 ns | 15ns | 20 ns | 15 ns | 500mA | 20V | SILICON | DRAIN | SWITCHING | 15W Tc | TO-220AB | 0.5A | 0.5A | 350V | N-Channel | 300pF @ 25V | 25 Ω @ 120mA, 0V | 500mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| VP0808L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vp0808lg-datasheets-1213.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 15 ns | 40ns | 30 ns | 30 ns | 280mA | 30V | SILICON | SWITCHING | 80V | 1W Tc | 0.28A | 5Ohm | 25 pF | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 280mA Tj | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FQP50N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp50n06l-datasheets-1219.pdf | 60V | 52.4A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 21MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 121W | 1 | FET General Purpose Power | 20 ns | 380ns | 145 ns | 80 ns | 52A | 20V | SILICON | SWITCHING | 2.5V | 121W Tc | TO-220AB | 990 mJ | 60V | N-Channel | 1630pF @ 25V | 21m Ω @ 26.2A, 10V | 2.5V @ 250μA | 52.4A Tc | 32nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| LP0701N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-lp0701lgg-datasheets-3054.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 17 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 20 ns | 20ns | 30 ns | 30 ns | 500mA | 10V | SILICON | SWITCHING | 16.5V | 1W Tc | 0.5A | 60 pF | -16.5V | P-Channel | 250pF @ 15V | 1.5 Ω @ 300mA, 5V | 1V @ 1mA | 500mA Tj | 2V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| RFP50N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-rfp50n06-datasheets-1235.pdf | 60V | 50A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 22mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | 1 | Single | 131W | 1 | FET General Purpose Power | 12 ns | 55ns | 13 ns | 37 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 4V | 131W Tc | TO-220AB | 60V | N-Channel | 2020pF @ 25V | 22m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 150nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP3NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf3nk80z-datasheets-2747.pdf | 800V | 2.5A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP3N | 3 | Single | 70W | 1 | FET General Purpose Power | 17 ns | 27ns | 40 ns | 36 ns | 2.5A | 30V | SILICON | SWITCHING | 3.75V | 70W Tc | TO-220AB | 800V | N-Channel | 485pF @ 25V | 4.5 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 19nC @ 10V | 10V | ±30V |
