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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI3464DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3464dvt1ge3-datasheets-0715.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 2W | 1 | FET General Purpose Powers | 3 ns | 12ns | 8 ns | 22 ns | 8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 3.6W Tc | 8A | 0.024Ohm | 20V | N-Channel | 1065pF @ 10V | 450 mV | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 8A Tc | 18nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R5-30MLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn6r530mldx-datasheets-0493.pdf | SOT-1210, 8-LFPAK33 | 26 Weeks | NOT SPECIFIED | 8 | NOT SPECIFIED | 65A | 30V | 51W Tc | N-Channel | 817pF @ 15V | 6.5m Ω @ 15A, 10V | 2.2V @ 1mA | 65A Tc | 13.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18541F5T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-SMD, No Lead | 1.49mm | 730μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | 338μm | BOTTOM | CSD18541 | Single | 1 | 2.2A | SILICON | SWITCHING | 60V | 60V | 1.75V | 500mW Ta | 0.075Ohm | 10.5 pF | N-Channel | 777pF @ 30V | 65m Ω @ 1A, 10V | 2.2V @ 250μA | 2.2A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y72-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y7280ex-datasheets-0566.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | Single | 45W | 1 | 4 ns | 4ns | 5 ns | 8 ns | 16A | 20V | 80V | SILICON | DRAIN | SWITCHING | 45W Tc | MO-235 | 63A | 0.072Ohm | N-Channel | 633pF @ 25V | 72m Ω @ 5A, 10V | 4V @ 1mA | 16A Tc | 9.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R3-25MLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn5r325mldx-datasheets-0615.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | HIGH RELIABILITY | IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 51W Tc | 285A | 0.00849Ohm | 76.7 mJ | N-Channel | 858pF @ 12V | 5.9m Ω @ 15A, 10V | 2.2V @ 1mA | 70A Tc | 12.7nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y65-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y65100e115-datasheets-0643.pdf | 15.875mm | SC-100, SOT-669 | 15.875mm | Black | Metal | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 1 | 8.1 ns | 13.6ns | 12.6 ns | 19.3 ns | 19A | 15V | 100V | DRAIN | SWITCHING | 64W Tc | MO-235 | 76A | 0.065Ohm | 25.3 mJ | 100V | N-Channel | 1523pF @ 25V | 63.3m Ω @ 5A, 10V | 2.1V @ 1mA | 19A Tc | 14nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C250NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/onsemiconductor-ntmfs4c250nt1g-datasheets-0648.pdf | 8-PowerTDFN | 16 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 69A | 30V | 770mW Ta | N-Channel | 1683pF @ 15V | 4m Ω @ 30A, 10V | 2.1V @ 250μA | 11A Ta 69A Tc | 11.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ305TE85LF | Toshiba Semiconductor and Storage | $0.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshiba-2sj305te85lf-datasheets-8442.pdf | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | 3 | unknown | Other Transistors | 200mA | Single | 30V | 200mW Ta | 0.2A | P-Channel | 92pF @ 3V | 4 Ω @ 50mA, 2.5V | 200mA Ta | 2.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R9-25MLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn3r925mlc115-datasheets-0602.pdf | SOT-1210, 8-LFPAK33 | 26 Weeks | 8 | No | 69W | LFPAK33 | 1.524nF | 13 ns | 23.2ns | 9.8 ns | 15.6 ns | 70A | 1.95V | 25V | 25V | 69W Tc | 6.35mOhm | 25V | N-Channel | 1524pF @ 12.5V | 4.15mOhm @ 25A, 10V | 2.15V @ 1mA | 70A Tc | 21.5nC @ 10V | 4.15 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6675BZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds6675bz-datasheets-0594.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 21.8MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | FDS6675 | Single | 2.5W | 1 | Other Transistors | 3 ns | 7.8ns | 60 ns | 120 ns | 11A | 25V | -30V | SILICON | SWITCHING | 30V | -2V | 2.5W Ta | 500 pF | -30V | P-Channel | 2470pF @ 15V | -2 V | 13m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 62nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| SQ2361AEES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2361aeest1ge3-datasheets-0653.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | 2 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 175°C | R-PDSO-G3 | 9 ns | 9ns | 4 ns | 24 ns | -2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 2W Tc | 45 pF | -60V | P-Channel | 620pF @ 30V | 170m Ω @ 2.4A, 10V | 2.5V @ 250μA | 2.8A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4172DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4172dyt1ge3-datasheets-0618.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 12mOhm | 8 | yes | EAR99 | Tin | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | FET General Purpose Power | 8 ns | 10ns | 8 ns | 16 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 4.5W Tc | 30V | N-Channel | 820pF @ 15V | 12m Ω @ 11A, 10V | 2.5V @ 250μA | 15A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AON6510 | Alpha & Omega Semiconductor Inc. | $25.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 2.16nF | 32A | 30V | 5W Ta 46W Tc | N-Channel | 2160pF @ 15V | 4.4mOhm @ 20A, 10V | 2.2V @ 250μA | 28A Ta 32A Tc | 42nC @ 10V | 4.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG7702SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg7702sfg7-datasheets-0641.pdf | 8-PowerVDFN | 5 | 6 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 15.8 ns | 27.8ns | 13.6 ns | 29.7 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 890mW Ta | 9.5A | N-Channel | 4310pF @ 15V | 10m Ω @ 13.5A, 10V | 2.5V @ 250μA | 12A Ta | 31.6nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQD4N25TM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd4n25tmws-datasheets-0737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | 1.75Ohm | ACTIVE (Last Updated: 1 day ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.8 ns | 45ns | 22 ns | 6.4 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 2.5W Ta 37W Tc | TO-252AA | 3A | 52 mJ | 250V | N-Channel | 200pF @ 25V | 1.75 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 5.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD5N15TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd5n15tm-datasheets-0546.pdf | 150V | 4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5 ns | 45ns | 25 ns | 13 ns | 4.3A | 25V | SILICON | DRAIN | SWITCHING | 2.5W Ta 30W Tc | 17.2A | 0.8Ohm | 55 mJ | 150V | N-Channel | 230pF @ 25V | 800m Ω @ 2.15A, 10V | 4V @ 250μA | 4.3A Tc | 7nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| RHP030N03T100 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 3A | TO-243AA | 4.5mm | 1.5mm | 2.5mm | Lead Free | 3 | 16 Weeks | 120MOhm | 3 | yes | EAR99 | No | 8541.21.00.95 | e2 | TIN COPPER | FLAT | 260 | 3 | Single | 10 | 2W | 1 | FET General Purpose Power | 7 ns | 11ns | 4.5 ns | 15 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 500mW Ta | 3A | 30V | N-Channel | 160pF @ 10V | 120m Ω @ 3A, 10V | 2.5V @ 1mA | 3A Ta | 6.5nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C670NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c670nlt1g-datasheets-0164.pdf | 8-PowerTDFN | 5.1mm | 1.95mm | 6.1mm | Lead Free | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 11 hours ago) | yes | not_compliant | e3 | Tin (Sn) | Single | 11 ns | 15 ns | 71A | 20V | 60V | 2V | 3.6W Ta 61W Tc | N-Channel | 1400pF @ 25V | 6.1m Ω @ 35A, 10V | 2V @ 250μA | 17A Ta 71A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD27N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std27n3lh5-datasheets-9995.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 19mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 260 | STD27N | 3 | 30 | 30W | 1 | FET General Purpose Power | R-PSSO-G2 | 4 ns | 22ns | 2.8 ns | 13 ns | 27A | 22V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30W Tc | 108A | 50 mJ | 30V | N-Channel | 475pF @ 25V | 19m Ω @ 13.5A, 10V | 1V @ 250μA | 27A Tc | 4.6nC @ 5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4800LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg4800lk313-datasheets-0181.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 15 Weeks | 3.949996g | No SVHC | no | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 4 | 2 | 40 | 1.71W | 1 | FET General Purpose Powers | 5.03 ns | 4.5ns | 8.55 ns | 26.33 ns | 10A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.71W Ta | 48A | 30V | N-Channel | 798pF @ 10V | 17m Ω @ 9A, 10V | 1.6V @ 250μA | 10A Ta | 8.7nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQ7414AEN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sq7414aent1ge3-datasheets-0330.pdf | PowerPAK® 1212-8 | 1.17mm | Lead Free | 12 Weeks | No SVHC | 22mOhm | 8 | EAR99 | SQ7414AEN-T1_GE3 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 62W | 175°C | 9 ns | 20 ns | 16A | 20V | 2V | 62W Tc | 60V | N-Channel | 980pF @ 30V | 26m Ω @ 5.7A, 10V | 2.5V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA36DP-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | PowerPAK® SO-8 | 14 Weeks | 506.605978mg | 8 | No | 44.6W | 1 | Single | 4.1W | 1 | PowerPAK® SO-8 | 2.815nF | 12 ns | 10ns | 9 ns | 26 ns | 40A | -16V | 30V | 2.8mOhm | 30V | N-Channel | 2815pF @ 15V | 2.8mOhm @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 56nC @ 10V | 2.8 mΩ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4468LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg4468lk313-datasheets-0354.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 15 Weeks | 3.949996g | No SVHC | 3 | no | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 4 | 1 | 40 | 1 | FET General Purpose Powers | R-PSSO-G2 | 5.46 ns | 14.53ns | 6.01 ns | 18.84 ns | 9.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.68W Ta | TO-252AA | 48A | 30V | N-Channel | 867pF @ 15V | 16m Ω @ 11.6A, 10V | 1.95V @ 250μA | 9.7A Ta | 18.85nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI8487DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si8487dbt1e1-datasheets-0357.pdf | 4-UFBGA | 21 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | Other Transistors | 7 ns | 10ns | 60 ns | 290 ns | -7.7A | 12V | 30V | -600mV | 1.1W Ta 2.7W Tc | -30V | P-Channel | 2240pF @ 15V | 31m Ω @ 2A, 10V | 1.2V @ 250μA | 80nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD22204W | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 9-UFBGA, DSBGA | 1.75mm | 625μm | 1.75mm | Lead Free | 9 | 6 Weeks | 9 | ACTIVE (Last Updated: 3 days ago) | yes | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD22204 | Single | 1 | 58 ns | 600ns | 2.29 μs | 3.45 μs | 5A | 6V | SILICON | SWITCHING | 8V | 8V | 1.7W Ta | 5A | 80A | 0.014Ohm | 265 pF | P-Channel | 1130pF @ 4V | 9.9m Ω @ 2A, 4.5V | 950mV @ 250μA | 5A Ta | 24.6nC @ 4.5V | 2.5V 4.5V | -6V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD5N20LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd5n20ltm-datasheets-0380.pdf | 200V | 3.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 9 ns | 90ns | 50 ns | 15 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 37W Tc | 60 mJ | 200V | N-Channel | 325pF @ 25V | 1.2 Ω @ 1.9A, 10V | 2V @ 250μA | 3.8A Tc | 6.2nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RCD041N25TL | ROHM Semiconductor | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-252-3 | Lead Free | 2 | 10 Weeks | EAR99 | not_compliant | 850mW | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 350pF | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 4A | 1.3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSR010N10HZGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 8 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 700mW Ta | N-Channel | 140pF @ 25V | 520m Ω @ 1A, 10V | 2.5V @ 1mA | 1A Ta | 3.5nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y18-55B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk7y1855b115-datasheets-0458.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 1 | 13 ns | 20ns | 16 ns | 34 ns | 47.4A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85W Tc | MO-235 | 189A | 0.018Ohm | 77 mJ | N-Channel | 1263pF @ 25V | 18m Ω @ 20A, 10V | 4V @ 1mA | 47.4A Tc | 21.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R1-30YLC,115 | Nexperia USA Inc. | $2.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r130ylc115-datasheets-9969.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 64W | 1 | 16 ns | 19ns | 10 ns | 24 ns | 92A | 20V | 30V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 67W Tc | MO-235 | 90A | 360A | 0.0057Ohm | 30V | N-Channel | 1502pF @ 15V | 4.35m Ω @ 20A, 10V | 1.95V @ 1mA | 92A Tc | 23nC @ 10V | 4.5V 10V | ±20V |
