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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD22204W | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 9-UFBGA, DSBGA | 1.75mm | 625μm | 1.75mm | Lead Free | 9 | 6 Weeks | 9 | ACTIVE (Last Updated: 3 days ago) | yes | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD22204 | Single | 1 | 58 ns | 600ns | 2.29 μs | 3.45 μs | 5A | 6V | SILICON | SWITCHING | 8V | 8V | 1.7W Ta | 5A | 80A | 0.014Ohm | 265 pF | P-Channel | 1130pF @ 4V | 9.9m Ω @ 2A, 4.5V | 950mV @ 250μA | 5A Ta | 24.6nC @ 4.5V | 2.5V 4.5V | -6V | |||||||||||||||||||||||||||||||||||||||
| DMP2540UCB9-7 | Diodes Incorporated | $2.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2540ucb97-datasheets-0177.pdf | 9-UFBGA, WLBGA | 9 | 7 Weeks | No SVHC | 40mOhm | yes | EAR99 | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 1 | 40 | 1 | S-PBGA-B9 | 11 ns | 12ns | 42 ns | 56 ns | 4A | -6V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 1W Ta | 4A | 90 pF | -25V | P-Channel | 450pF @ 10V | 40m Ω @ 2A, 4.5V | 1.1V @ 250μA | 4A Ta | 6nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||
| BUK9M17-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m1730ex-datasheets-0214.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 37A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 44W Tc | 148A | 0.017Ohm | 13.7 mJ | N-Channel | 725pF @ 25V | 14m Ω @ 10A, 10V | 2.1V @ 1mA | 37A Tc | 8nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD5T40P | Alpha & Omega Semiconductor Inc. | $2.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | TO-252, (D-Pak) | 273pF | 3.9A | 400V | 52W Tc | N-Channel | 273pF @ 100V | 1.45Ohm @ 1A, 10V | 5V @ 250μA | 3.9A Tc | 9nC @ 10V | 1.45 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M120-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m120100ex-datasheets-0223.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 11.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 44W Tc | 46A | 0.12Ohm | 13.2 mJ | N-Channel | 882pF @ 25V | 119m Ω @ 5A, 10V | 2.05V @ 1mA | 11.5A Tc | 8.8nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8439DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8439dbt1e1-datasheets-9962.pdf | 4-UFBGA | 4 | 13 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 1 | 30 ns | 25ns | 210 ns | 330 ns | -9.2A | -800mV | SILICON | SWITCHING | 8V | -400mV | 1.1W Ta 2.7W Tc | 0.025Ohm | -8V | P-Channel | 25m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 50nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y21-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y2140ex-datasheets-0257.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 1 | 4.9 ns | 6.4ns | 5.5 ns | 6.7 ns | 33A | 20V | 40V | SILICON | DRAIN | SWITCHING | 45W Tc | MO-235 | 40V | N-Channel | 617pF @ 25V | 21m Ω @ 10A, 10V | 4V @ 1mA | 33A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| RSD046P05TL | ROHM Semiconductor | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | 850mW Ta 15W Tc | 0.26Ohm | P-Channel | 550pF @ 10V | 155m Ω @ 4.5A, 10V | 3V @ 1mA | 4.5A Tc | 12nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3024LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmn3024lk313-datasheets-9975.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 17 Weeks | 3.949996g | No SVHC | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 8.9W | 1 | FET General Purpose Power | R-PSSO-G2 | 2.9 ns | 3.3ns | 8 ns | 16 ns | 14.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | 2.17W Ta | TO-252AA | 9.78A | 46.5A | 0.024Ohm | N-Channel | 608pF @ 15V | 24m Ω @ 7A, 10V | 3V @ 250μA | 9.78A Ta | 12.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| RS1E200BNTB | ROHM Semiconductor | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-PowerTDFN | Lead Free | 5 | 20 Weeks | 2.8mOhm | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta 25W Tc | N-Channel | 3100pF @ 15V | 3.9m Ω @ 20A, 10V | 2.5V @ 1mA | 20A Ta | 59nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| MCQ4407-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/microcommercialco-mcq4407tp-datasheets-9986.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | 30V | 1.4W Ta | P-Channel | 2900pF @ 15V | 17m Ω @ 10A, 10V | 2.2V @ 250μA | 12A Ta | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J353F,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | S-Mini | 159pF | 2A | 30V | 600mW Ta | P-Channel | 159pF @ 15V | 150mOhm @ 2A, 10V | 2.2V @ 250μA | 2A Ta | 3.4nC @ 4.5V | 150 mΩ | 4V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQT3P20TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqt3p20tf-datasheets-0073.pdf&product=onsemiconductor-fqt3p20tf-6842639 | -200V | -670mA | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.56mm | Lead Free | 4 | 18 Weeks | 188mg | 2.7Ohm | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | R-PDSO-G4 | 8.5 ns | 35ns | 25 ns | 12 ns | 670mA | 30V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Tc | 0.67A | 2.7A | -200V | P-Channel | 250pF @ 25V | 2.7 Ω @ 335mA, 10V | 5V @ 250μA | 670mA Tc | 8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| AON2409 | Alpha & Omega Semiconductor Inc. | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 6-UDFN Exposed Pad | 16 Weeks | 6 | 2.8W | 1 | 8A | 20V | 30V | 2.8W Ta | P-Channel | 530pF @ 15V | 32m Ω @ 8A, 10V | 2.3V @ 250μA | 8A Ta | 14.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R0-25YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn6r025yldx-datasheets-0112.pdf | SC-100, SOT-669 | 4 | 12 Weeks | HIGH RELIABILITY | IEC-60134 | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | 61A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 43W Tc | MO-235 | 244A | 0.00675Ohm | 50.9 mJ | N-Channel | 705pF @ 12V | 6.75m Ω @ 15A, 10V | 2.2V @ 1mA | 61A Tc | 10.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RUR040N02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/rohm-rur040n02tl-datasheets-8355.pdf | SC-96 | 2.9mm | 800μm | 1.6mm | 3 | 20 Weeks | No SVHC | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 10 ns | 30ns | 60 ns | 50 ns | 4A | 10V | SILICON | SWITCHING | 1W Ta | 4A | 0.046Ohm | 20V | N-Channel | 680pF @ 10V | 300 mV | 35m Ω @ 4A, 4.5V | 1.3V @ 1mA | 4A Ta | 8nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||
| RTQ040P02TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-rtq040p02tr-datasheets-0141.pdf | -20V | -4A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | No SVHC | 85MOhm | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | 10 | 1.25W | 1 | Other Transistors | 15 ns | 35ns | 35 ns | 60 ns | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -2V | 1.25W Ta | 4A | -20V | P-Channel | 1350pF @ 10V | 50m Ω @ 4A, 4.5V | 2V @ 1mA | 4A Ta | 12.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI8483DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8483dbt2e1-datasheets-9921.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | 6 | 21 Weeks | No SVHC | 6 | EAR99 | Tin | No | e3 | BOTTOM | BALL | 1 | Single | 2.77W | 1 | Other Transistors | 20 ns | 20ns | 20 ns | 80 ns | -16A | 10V | SILICON | SWITCHING | 12V | -400mV | 2.77W Ta 13W Tc | 25A | 0.035Ohm | P-Channel | 1840pF @ 6V | 26m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 65nC @ 10V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| DMN3016LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn3016lss13-datasheets-9806.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 10.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.5W Ta | 9.3A | 0.012Ohm | 25 mJ | N-Channel | 1415pF @ 15V | 12m Ω @ 12A, 10V | 2.5V @ 250μA | 10.3A Ta | 25.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AO4466 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | DUAL | GULL WING | 8 | 3.1W | 1 | FET General Purpose Power | Not Qualified | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.1W Ta | 50A | 0.023Ohm | N-Channel | 448pF @ 15V | 23m Ω @ 10A, 10V | 2.6V @ 250μA | 10A Ta | 8.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ6E050ATTCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rq6e050attcr-datasheets-9822.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 20 Weeks | 21mOhm | 6 | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.25W Ta | 5A | P-Channel | 940pF @ 15V | 27m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 20.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 12 Weeks | FET General Purpose Power | 10A | Single | 20V | 1W Ta | N-Channel | 710pF @ 10V | 12m Ω @ 7A, 4.5V | 1.2V @ 1mA | 10A Ta | 9.4nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2308CES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq2308cest1ge3-datasheets-9997.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 175°C | R-PDSO-G3 | 4 ns | 12 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 2V | 2W Tc | TO-236AB | 60V | N-Channel | 205pF @ 30V | 150m Ω @ 2.3A, 10V | 2.5V @ 250μA | 2.3A Tc | 5.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQD7P06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqd7p06tm-datasheets-9924.pdf | -60V | -5.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | 450mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 7 ns | 50ns | 25 ns | 7.5 ns | 5.4A | 25V | SILICON | DRAIN | SWITCHING | 60V | 2.5W Ta 28W Tc | 90 mJ | -60V | P-Channel | 295pF @ 25V | 451m Ω @ 2.7A, 10V | 4V @ 250μA | 5.4A Tc | 8.2nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| DMP3050LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp3050lss13-datasheets-9767.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 18 Weeks | No SVHC | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 1 | Other Transistors | 4.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.7W Ta | 30A | 0.045Ohm | P-Channel | 620pF @ 15V | 45m Ω @ 6A, 10V | 2V @ 250μA | 4.8A Ta | 10.5nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMPB27EP,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmpb27ep115-datasheets-9790.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | 6 | Tin | e3 | YES | DUAL | NO LEAD | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 1.7W | 1 | 10 ns | 31ns | 19 ns | 28 ns | 6.1A | 20V | -30V | SILICON | DRAIN | SWITCHING | 30V | 1.7W Ta 12.5W Tc | 25A | 0.029Ohm | -30V | P-Channel | 1570pF @ 15V | 29m Ω @ 6.1A, 10V | 2.5V @ 250μA | 6.1A Ta | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| CMPDM7002AG TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpdm7002agtrpbfree-datasheets-9752.pdf | TO-236-3, SC-59, SOT-23-3 | 42 Weeks | 60V | 350mW Ta | N-Channel | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 280mA Ta | 5V 10V | 40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON2406 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 6-UDFN Exposed Pad | 18 Weeks | 8A | 20V | 2.8W Ta | N-Channel | 1140pF @ 10V | 12.5m Ω @ 8A, 4.5V | 1V @ 250μA | 8A Ta | 18nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C10NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntmfs4c10nt1g-datasheets-9074.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | 1 | Single | 1 | FET General Purpose Power | 9 ns | 34ns | 7 ns | 14 ns | 46A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.2V | 750mW Ta 23.6W Tc | 8.2A | N-Channel | 987pF @ 15V | 6.95m Ω @ 30A, 10V | 2.2V @ 250μA | 8.2A Ta | 9.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PSMN9R0-25MLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn9r025mlc115-datasheets-9888.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 8 | 45W | 1 | R-PSSO-G4 | 7.1 ns | 10.1ns | 6.1 ns | 11.1 ns | 55A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45W Tc | 25V | N-Channel | 705pF @ 12.5V | 8.65m Ω @ 15A, 10V | 1.95V @ 1mA | 55A Tc | 11.7nC @ 10V | 4.5V 10V | ±20V |
