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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PCP1403-TD-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-pcp1403tdh-datasheets-9907.pdf | TO-243AA | Lead Free | 3 | 19 Weeks | 130.492855mg | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 5.6 ns | 7ns | 14 ns | 26 ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.5W Tc | 0.117Ohm | 60V | N-Channel | 310pF @ 20V | 117m Ω @ 2A, 10V | 2.6V @ 1mA | 4.5A Ta | 6.7nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| RSR015P03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/rohmsemiconductor-rsr015p03tl-datasheets-9910.pdf | -30V | -1.5A | SC-96 | Lead Free | 3 | 10 Weeks | No SVHC | 440mOhm | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | Other Transistors | 6 ns | 8ns | 6 ns | 22 ns | 1.5A | 20V | 30V | SWITCHING | 2.5V | 1W Ta | -30V | P-Channel | 190pF @ 10V | 2.5 V | 235m Ω @ 1.5A, 10V | 1.5A Ta | 2.6nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI2303CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2303cdst1ge3-datasheets-4410.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | 190MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 2.3W | 1 | Other Transistors | 36 ns | 37ns | 37 ns | 12 ns | 1.9A | 20V | SILICON | SWITCHING | 30V | 2.3W Tc | 2.7A | -30V | P-Channel | 155pF @ 15V | 190m Ω @ 1.9A, 10V | 3V @ 250μA | 2.7A Tc | 8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMFS4955NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4955nt3g-datasheets-7042.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 6MOhm | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 2.7W | 1 | FET General Purpose Power | 48A | 20V | SILICON | DRAIN | SWITCHING | 920mW Ta 23.2W Tc | 9.7A | 30V | N-Channel | 1264pF @ 15V | 6m Ω @ 30A, 10V | 2.2V @ 250μA | 9.7A Ta 48A Tc | 10.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK7M33-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m3360ex-datasheets-9680.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 44W Tc | 24A | 98A | 0.033Ohm | 10.3 mJ | N-Channel | 628pF @ 25V | 33m Ω @ 5A, 10V | 4V @ 1mA | 24A Tc | 10.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN013-30YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn01330ylc115-datasheets-9687.pdf | SC-100, SOT-669 | 4 | 12 Weeks | HIGH RELIABILITY | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 26W Tc | MO-235 | 32A | 130A | 0.0169Ohm | 7 mJ | N-Channel | 521pF @ 15V | 13.6m Ω @ 10A, 10V | 1.95V @ 1mA | 32A Tc | 8.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF720PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf720pbf-datasheets-9729.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.8Ohm | 3 | No | 33A | 400V | 1 | Single | 50W | 1 | TO-220AB | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 4V | 50W Tc | 600 ns | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 4 V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK9M24-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m2440ex-datasheets-9692.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 44W Tc | 121A | 0.024Ohm | 12.6 mJ | N-Channel | 798pF @ 25V | 20m Ω @ 10A, 10V | 2.1V @ 1mA | 30A Tc | 7.7nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2301BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2301bdst1e3-datasheets-4774.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 100MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | Other Transistors | 20 ns | 40ns | 40 ns | 30 ns | -2.2A | 8V | SILICON | 20V | -950mV | 700mW Ta | -20V | P-Channel | 375pF @ 6V | -950 mV | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 2.2A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI1330EDL-T1-GE3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1330edlt1e3-datasheets-1598.pdf | SC-70, SOT-323 | 3 | 14 Weeks | 124.596154mg | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 280mW | 1 | FET General Purpose Powers | 3.8 ns | 4.8ns | 9.6 ns | 12.8 ns | 240mA | 20V | SILICON | SWITCHING | 60V | 60V | 280mW Ta | 0.24A | N-Channel | 2.5 Ω @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| MCQ4406-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microcommercialco-mcq4406tp-datasheets-9568.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | 260 | 10 | 30V | 1.4W Ta | N-Channel | 1550pF @ 15V | 16m Ω @ 10A, 4.5V | 3V @ 250μA | 10A Ta | 13nC @ 5V | 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7702 | Alpha & Omega Semiconductor Inc. | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon7702-datasheets-9592.pdf | 8-PowerVDFN | 36A | 30V | 3.1W Ta 23W Tc | N-Channel | 4250pF @ 15V | 10m Ω @ 13.5A, 10V | 3V @ 250μA | 13.5A Ta 36A Tc | 48nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1013CX-T1-GE3 | Vishay Siliconix | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1013cxt1ge3-datasheets-9530.pdf | SC-89, SOT-490 | 3 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 3 | 1 | 190mW | 1 | Other Transistors | 1 ns | 8ns | 5 ns | 9 ns | 450mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 190mW Ta | 0.45A | 0.76Ohm | -20V | P-Channel | 45pF @ 10V | 760m Ω @ 400mA, 4.5V | 1V @ 250μA | 450mA Ta | 2.5nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| NTNUS3171PZT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntnus3171pzt5g-datasheets-9538.pdf | SOT-1123 | 850μm | 400μm | 650μm | Lead Free | 3 | 2 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | -200mW | 1 | Other Transistors | Not Qualified | 30 ns | 56ns | 145 ns | 196 ns | 150mA | 8V | SILICON | SWITCHING | 20V | 125mW Ta | -20V | P-Channel | 13pF @ 15V | 3.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 150mA Ta | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| MCH6342-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-mch6342tlw-datasheets-9628.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 6 Weeks | No SVHC | 88 | ACTIVE (Last Updated: 3 days ago) | yes | ESD PROTECTED | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | DUAL | 1 | R-XDSO-F6 | 8.2 ns | 28ns | 60 ns | 100 ns | 4.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | -1.3V | 1.5W Ta | 18A | 0.073Ohm | P-Channel | 650pF @ 10V | 73m Ω @ 2A, 4.5V | 1.3V @ 1mA | 4.5A Ta | 8.6nC @ 4.5V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| SI3407DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3407dvt1ge3-datasheets-9665.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 24mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | -8A | 12V | SILICON | 20V | -1.5V | 4.2W Tc | 7.5A | -20V | P-Channel | 1670pF @ 10V | -1.5 V | 24m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 8A Tc | 63nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| SQ1431EH-T1_GE3 | Vishay Siliconix | $0.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq1431eht1ge3-datasheets-9563.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | SC-70-6 (SOT-363) | 30V | 3W Tc | P-Channel | 205pF @ 25V | 175mOhm @ 2A, 10V | 2V @ 250μA | 3A Tc | 6.5nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3018SFG-13 | Diodes Incorporated | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3018sfg13-datasheets-9659.pdf | 8-PowerVDFN | 697pF | 15 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 4.3 ns | 4.4ns | 4.1 ns | 20.1 ns | 8.5A | 25V | 1W Ta | 30V | N-Channel | 697pF @ 15V | 21m Ω @ 10A, 10V | 2.1V @ 250μA | 8.5A Ta | 13.2nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN020-30MLCX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn02030mlcx-datasheets-9454.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | No SVHC | 8 | No | YES | GULL WING | 8 | 1 | Single | 1 | R-PSSO-G4 | 6.1 ns | 7.2ns | 5.1 ns | 10.1 ns | 31.8A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.62V | 33W Tc | 0.027Ohm | 7.7 mJ | 30V | N-Channel | 430pF @ 15V | 18.1m Ω @ 5A, 10V | 1.95V @ 1mA | 31.8A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1032X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1032rt1ge3-datasheets-5605.pdf | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 3 | 14 Weeks | 29.993795mg | Unknown | 5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 3 | 1 | Single | 30 | 300mW | 1 | FET General Purpose Power | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 6V | SILICON | SWITCHING | 20V | 20V | 700mV | 300mW Ta | 0.2A | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 200mA Ta | 0.75nC @ 4.5V | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
| SSM3K335R,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 16 Weeks | unknown | Single | 1W | 6A | 20V | 1W Ta | 30V | N-Channel | 340pF @ 15V | 38m Ω @ 4A, 10V | 2.5V @ 100μA | 6A Ta | 2.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2011UFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn2011ufdf7-datasheets-9497.pdf | 6-UDFN Exposed Pad | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 20V | 2.1W Ta | N-Channel | 2248pF @ 10V | 9.5m Ω @ 7A, 4.5V | 1V @ 250μA | 14.2A Ta | 56nC @ 10V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ6E035ATTCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq6e035attcr-datasheets-9469.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 20 Weeks | 38mOhm | 6 | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.25W Ta | P-Channel | 475pF @ 15V | 50m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A Ta | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN61D8LQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn61d8lq13-datasheets-0961.pdf | TO-236-3, SC-59, SOT-23-3 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 470mA | 60V | 390mW Ta | N-Channel | 12.9pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 470mA Ta | 0.74nC @ 5V | 3V 5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMT560ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmt560eneax-datasheets-9542.pdf | TO-261-4, TO-261AA | 4 | 4 Weeks | LOGIC LEVEL COMPATIBLE | AEC-Q101; IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 750mW Ta | 1.1A | 0.715Ohm | N-Channel | 112pF @ 50V | 715m Ω @ 1.1A, 10V | 2.7V @ 250μA | 1.1A Ta | 4.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp2066lvt7-datasheets-9571.pdf | SOT-23-6 | 2.9mm | 900μm | 1.6mm | 26 | EAR99 | e3 | Matte Tin (Sn) | Single | 8.5 ns | 61 ns | 4.5A | 8V | 20V | 1.2W Ta | P-Channel | 2990pF @ 15V | 45m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 25nC @ 10V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5C035BCTCL | ROHM Semiconductor | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | SC-96 | 20 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 20V | 1W Tc | P-Channel | 460pF @ 10V | 59m Ω @ 3.5A, 4.5V | 1.2V @ 1mA | 3.5A Ta | 6.5nC @ 4.5V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3025LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn3025lss13-datasheets-9227.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 7 Weeks | 73.992255mg | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 260 | 1 | 30 | FET General Purpose Powers | 3.3 ns | 4.4ns | 5.3 ns | 22.3 ns | 7.2A | 20V | Single | 1.4W Ta | 30V | N-Channel | 641pF @ 15V | 20m Ω @ 10A, 10V | 2V @ 250μA | 7.2A Ta | 13.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8465DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8465dbt2e1-datasheets-9388.pdf | 4-XFBGA, CSPBGA | 4 | 46 Weeks | Unknown | 4 | yes | EAR99 | No | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 4 | Single | 30 | 1 | 20 ns | 20ns | 10 ns | 25 ns | -3.8A | 12V | SILICON | SWITCHING | 20V | 20V | -1.5V | 780mW Ta 1.8W Tc | 2.5A | P-Channel | 450pF @ 10V | 104m Ω @ 1.5A, 4.5V | 1.5V @ 250μA | 18nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SI2305CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2305cdst1ge3-datasheets-9390.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 35mOhm | 3 | yes | EAR99 | No | 58A | e3 | Matte Tin (Sn) | 8V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 960mW | 1 | Other Transistors | 150°C | 20 ns | 20ns | 20 ns | 40 ns | -4.4A | 8V | SILICON | SWITCHING | -400mV | 960mW Ta 1.7W Tc | -8V | P-Channel | 960pF @ 4V | 35m Ω @ 4.4A, 4.5V | 1V @ 250μA | 5.8A Tc | 30nC @ 8V | 1.8V 4.5V | ±8V |
