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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM6J212FE,LF | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | EAR99 | unknown | Single | 500mW | 4A | 8V | 20V | 500mW Ta | -20V | P-Channel | 970pF @ 10V | 40.7m Ω @ 3A, 4.5V | 1V @ 1mA | 4A Ta | 14.1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3375-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-mch3375tlw-datasheets-9422.pdf | 3-SMD, Flat Lead | Lead Free | 3 | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e6 | Tin/Bismuth (Sn/Bi) | DUAL | 1 | R-PDSO-F3 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 800mW Ta | 0.295Ohm | P-Channel | 82pF @ 10V | 295m Ω @ 800mA, 10V | 2.6V @ 1mA | 1.6A Ta | 2.2nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB56ENZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmxb56enz-datasheets-9449.pdf | 3-XDFN Exposed Pad | 3 | 4 Weeks | 3 | No | YES | DUAL | 3 | 1.07W | 1 | 3 ns | 12ns | 2 ns | 11 ns | 3.2A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400mW Ta 8.33W Tc | 0.065Ohm | N-Channel | 209pF @ 15V | 55m Ω @ 3.2A, 10V | 2V @ 250μA | 3.2A Ta | 6.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN020-30MLCX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn02030mlcx-datasheets-9454.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | No SVHC | 8 | No | YES | GULL WING | 8 | 1 | Single | 1 | R-PSSO-G4 | 6.1 ns | 7.2ns | 5.1 ns | 10.1 ns | 31.8A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.62V | 33W Tc | 0.027Ohm | 7.7 mJ | 30V | N-Channel | 430pF @ 15V | 18.1m Ω @ 5A, 10V | 1.95V @ 1mA | 31.8A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| MIC94050YM4-TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SymFET™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/microchiptechnology-mic94051ym4tr-datasheets-8116.pdf | -6V | -1.8A | TO-253-4, TO-253AA | 2.92mm | 1.02mm | 1.3mm | Lead Free | 7 Weeks | 160mOhm | 4 | MIC94050 | Single | 568mW | 1 | SOT-143 | 600pF | 1.8A | 6V | 6V | 568mW Ta | 320mOhm | P-Channel | 600pF @ 5.5V | 160mOhm @ 100mA, 4.5V | 1.2V @ 250μA | 1.8A Ta | 160 mΩ | 1.8V 4.5V | 6V | ||||||||||||||||||||||||||||||||||||||||||||||
| FJ6K01010L | Panasonic Electronic Components | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fj6k01010l-datasheets-9262.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.7mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Other Transistors | 9 ns | 250 ns | -4A | 8V | SILICON | SWITCHING | 12V | -650mV | 700mW Ta | 4A | 0.034Ohm | -12V | P-Channel | 1400pF @ 10V | -650 mV | 34m Ω @ 1A, 4.5V | 1V @ 1mA | 4A Ta | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| PMN30XPX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmn30xpx-datasheets-9303.pdf | SC-74, SOT-457 | 6 | 4 Weeks | IEC-60134 | DUAL | GULL WING | 6 | 1 | R-PDSO-G6 | 5.2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 550mW Ta 6.25W Tc | 0.034Ohm | P-Channel | 1575pF @ 10V | 34m Ω @ 5.2A, 4.5V | 900mV @ 250μA | 5.2A Ta | 23nC @ 4.5V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3474DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3474dvt1ge3-datasheets-9311.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | 6 | 14 Weeks | No SVHC | 6 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 2W | 1 | 150°C | 8 ns | 68ns | 20 ns | 10 ns | 2.8A | 20V | SILICON | SWITCHING | 3.6W Tc | 3.8A | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.8A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SSM3J306T(TE85L,F) | Toshiba Semiconductor and Storage | $2.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 11 Weeks | 3 | 1 | Single | Other Transistors | 16 ns | 35 ns | 2.4A | 20V | 30V | 700mW Ta | -30V | P-Channel | 280pF @ 15V | 117m Ω @ 1A, 10V | 2.4A Ta | 2.5nC @ 15V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2022UFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2022ufdf7-datasheets-9248.pdf | 6-UDFN Exposed Pad | 6 | 14 Weeks | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | 1 | Single | 30 | 1 | S-PDSO-N6 | 56 ns | 87ns | 239 ns | 632 ns | 7.9A | 8V | SILICON | DRAIN | SWITCHING | 660mW Ta | 0.05Ohm | 20V | N-Channel | 907pF @ 10V | 22m Ω @ 4A, 4.5V | 1V @ 250μA | 7.9A Ta | 18nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI8812DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si8812dbt2e1-datasheets-9171.pdf | 4-UFBGA | Lead Free | 4 | 44 Weeks | 4 | EAR99 | unknown | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 900mW | 1 | 3.2A | 8V | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 0.065Ohm | N-Channel | 59m Ω @ 1A, 4.5V | 1V @ 250μA | 17nC @ 8V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||
| MTM761230LBF | Panasonic Electronic Components | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-mtm761230lbf-datasheets-9194.pdf | 6-SMD, Flat Leads | 2mm | 700μm | 1.7mm | Lead Free | 6 | 10 Weeks | No SVHC | 55mOhm | 6 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 700mW | 1 | Other Transistors | -3A | 10V | SILICON | SWITCHING | 20V | -850mV | 700mW Ta | 3A | -20V | P-Channel | 1000pF @ 10V | 850 mV | 55m Ω @ 1A, 4V | 1.3V @ 1mA | 3A Ta | 2.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| SISA96DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sisa96dnt1ge3-datasheets-9179.pdf | PowerPAK® 1212-8 | 1.17mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 150°C | 8 ns | 13 ns | 14.8A | 26.5W Tc | 30V | N-Channel | 1385pF @ 15V | 8.8m Ω @ 10A, 10V | 2.2V @ 250μA | 16A Tc | 15nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E120BNTB | ROHM Semiconductor | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-PowerVDFN | Lead Free | 5 | 20 Weeks | No SVHC | 6.6mOhm | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 2W Ta | N-Channel | 1500pF @ 15V | 9.3m Ω @ 12A, 10V | 2.5V @ 1mA | 12A Ta | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN6070SFCL-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn6070sfcl7-datasheets-9223.pdf | 6-PowerUFDFN | Lead Free | 3 | 23 Weeks | 6 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | DMN6070 | 1 | Single | 1 | S-PDSO-N3 | 3.5 ns | 4.1ns | 11 ns | 35 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 600mW Ta | 3A | 0.085Ohm | 60V | N-Channel | 606pF @ 20V | 85m Ω @ 1.5A, 10V | 3V @ 250μA | 3A Ta | 12.3nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTN22N100L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn22n100l-datasheets-9234.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 600mOhm | 4 | yes | UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 36 ns | 35ns | 50 ns | 80 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 700W Tc | 50A | 1500 mJ | 1kV | N-Channel | 7050pF @ 25V | 600m Ω @ 11A, 20V | 5.5V @ 250μA | 22A Tc | 270nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||||
| AON6558 | Alpha & Omega Semiconductor Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | FET General Purpose Power | 28A | Single | 30V | 5W Ta 24W Tc | 30A | N-Channel | 1128pF @ 15V | 5.1m Ω @ 20A, 10V | 2.2V @ 250μA | 25A Ta 28A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB15XP,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmpb15xp115-datasheets-9241.pdf | 6-UDFN Exposed Pad | Lead Free | 6 | 8 Weeks | 6 | No | e3 | Tin (Sn) | YES | DUAL | 6 | 1 | 18 ns | 90ns | 57 ns | 85 ns | 8.2A | 12V | -12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7W Ta 12.5W Tc | 33A | 0.019Ohm | P-Channel | 2875pF @ 6V | 19m Ω @ 8.2A, 4.5V | 900mV @ 250μA | 8.2A Ta | 100nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM3J114TU(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 2.1mm | 700μm | 1.7mm | 3 | 1 | Single | Other Transistors | 19 ns | 18 ns | 1.8A | -1V | 20V | 500mW Ta | -20V | P-Channel | 331pF @ 10V | 149m Ω @ 600mA, 4V | 1V @ 1mA | 1.8A Ta | 7.7nC @ 4V | 1.5V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RHU002N06FRAT106 | ROHM Semiconductor | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rhu002n06frat106-datasheets-9282.pdf | SC-70, SOT-323 | 3 | 8 Weeks | Unknown | 3 | EAR99 | not_compliant | AEC-Q101 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 200mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2.5V | 200mW Ta | 0.2A | 4Ohm | N-Channel | 15pF @ 10V | 2.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 200mA Ta | 4.4nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI8824EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8824edbt2e1-datasheets-8952.pdf | 4-XFBGA | 4 | 44 Weeks | Unknown | 60mOhm | 4 | EAR99 | BOTTOM | BALL | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 800mV | 500mW Ta | N-Channel | 400pF @ 10V | 75m Ω @ 1A, 4.5V | 800mV @ 250μA | 6nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50P06-15L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50p0615lge3-datasheets-8764.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 60V | 150W Tc | P-Channel | 6120pF @ 25V | 15mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7M45-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m4540ex-datasheets-8956.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | 19A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 31W Tc | 77A | 0.045Ohm | 4.6 mJ | N-Channel | 317pF @ 25V | 45m Ω @ 5A, 10V | 4V @ 1mA | 19A Tc | 6.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN2250UFB-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2250ufb7b-datasheets-9098.pdf | 3-UFDFN | 1.08mm | 480μm | 675μm | 3 | 6 Weeks | No SVHC | 3 | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 1 | Single | 30 | 1 | FET General Purpose Powers | 4.3 ns | 6.1ns | 25.4 ns | 59.4 ns | 1.35A | 8V | SILICON | DRAIN | SWITCHING | 20V | 20V | 500mW Ta | 0.25Ohm | N-Channel | 94pF @ 16V | 170m Ω @ 1A, 4.5V | 1V @ 250μA | 1.35A Ta | 3.1nC @ 10V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SSM3K336R,LF | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-23-3 Flat Leads | 12 Weeks | unknown | 3A | 30V | 1W Ta | N-Channel | 126pF @ 15V | 95m Ω @ 2A, 10V | 2.5V @ 100μA | 3A Ta | 1.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2066UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp2066ufde7-datasheets-8806.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | 14 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 1 | Single | 40 | 1 | Other Transistors | S-PDSO-N3 | 13.7 ns | 14ns | 35.5 ns | 79.1 ns | 6.2A | 12V | SILICON | DRAIN | SWITCHING | 660mW Ta | 4.2A | 20V | P-Channel | 1537pF @ 10V | 36m Ω @ 4.6A, 4.5V | 1.1V @ 250μA | 6.2A Ta | 14.4nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| AO4752 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | yes | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.1W Ta | N-Channel | 605pF @ 15V | 8.8m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta | 15nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5E035BNTCL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rq5e035bntcl-datasheets-8856.pdf | SC-96 | 3 | 20 Weeks | 28mOhm | 96 | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1W Ta | N-Channel | 250pF @ 15V | 37m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A Ta | 6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PMT280ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmt280eneax-datasheets-8885.pdf | TO-261-4, TO-261AA | 4 | 4 Weeks | LOGIC LEVEL COMPATIBLE | AEC-Q101; IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 770mW Ta | 1.5A | 0.385Ohm | N-Channel | 195pF @ 50V | 385m Ω @ 1.5A, 10V | 2.7V @ 250μA | 1.5A Ta | 6.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RRF015P03GTL | ROHM Semiconductor | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rrf015p03tl-datasheets-2225.pdf | 3-SMD, Flat Lead | 16 Weeks | 1.5A | 30V | 320mW Ta | P-Channel | 230pF @ 10V | 160m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 6.4nC @ 10V | 4V 10V | ±20V |
