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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLZ44NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irlz44npbf-datasheets-8681.pdf | 55V | 47A | TO-220-3 | 10.5156mm | 19.8mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 22mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 1 | Single | 83W | 1 | 175°C | 11 ns | 84ns | 15 ns | 26 ns | 47A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 110W Tc | TO-220AB | 120 ns | 55V | N-Channel | 1700pF @ 25V | 2 V | 22m Ω @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| TN0604N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0604n3g-datasheets-8697.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | FET General Purpose Power | 10 ns | 6ns | 20 ns | 25 ns | 700mA | 20V | SILICON | SWITCHING | 740mW Ta | 0.7A | 0.75Ohm | 50 pF | 40V | N-Channel | 190pF @ 20V | 750m Ω @ 1.5A, 10V | 1.6V @ 1mA | 700mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STF19NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb19nf20-datasheets-2760.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STF19 | 3 | Single | 25W | 1 | FET General Purpose Power | 11.5 ns | 22ns | 11 ns | 19 ns | 7.5A | 20V | SILICON | SWITCHING | 3V | 25W Tc | TO-220AB | 60A | 200V | N-Channel | 800pF @ 25V | 160m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPL60R085P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r085p7auma1-datasheets-7519.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 154W Tc | 110A | 0.085Ohm | 118 mJ | N-Channel | 2180pF @ 400V | 85m Ω @ 11.8A, 10V | 4V @ 590μA | 39A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6009LCT | Diodes Incorporated | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6009lct-datasheets-8604.pdf | TO-220-3 | 19 Weeks | TO-220AB | 1.925nF | 37.2A | 60V | 2.2W Ta 25W Tc | N-Channel | 1925pF @ 30V | 12mOhm @ 13.5A, 10V | 2V @ 250μA | 37.2A Tc | 33.5nC @ 10V | 12 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP4N20L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqp4n20l-datasheets-8607.pdf | 200V | 3.8A | TO-220-3 | Lead Free | 3 | 4 Weeks | 1.8g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 45W | 1 | FET General Purpose Power | R-PSFM-T3 | 7 ns | 70ns | 40 ns | 15 ns | 3.8A | 20V | SILICON | SWITCHING | 45W Tc | TO-220AB | 3.6A | 52 mJ | 200V | N-Channel | 310pF @ 25V | 1.35 Ω @ 1.9A, 10V | 2V @ 250μA | 3.8A Tc | 5.2nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF620PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irf620pbf-datasheets-8474.pdf | 250V | 5.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800mOhm | 3 | No | 52A | 200V | 1 | Single | 50W | 1 | TO-220AB | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 2V | 50W Tc | 300 ns | 800mOhm | 200V | N-Channel | 260pF @ 25V | 2 V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AOT1N60 | Alpha & Omega Semiconductor Inc. | $2.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | TO-220 | 160pF | 1.3A | 600V | 41.7W Tc | N-Channel | 160pF @ 25V | 9Ohm @ 650mA, 10V | 4.5V @ 250μA | 1.3A Tc | 8nC @ 10V | 9 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfz44nlpbf-datasheets-1585.pdf | 55V | 49A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 17.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 110W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 12 ns | 60ns | 45 ns | 44 ns | 49A | 20V | 55V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 94W Tc | 95 ns | 55V | N-Channel | 1470pF @ 25V | 4 V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FQB11P06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqb11p06tm-datasheets-8338.pdf | -60V | -11.4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.13W | 1 | Other Transistors | R-PSSO-G2 | 6.5 ns | 40ns | 45 ns | 15 ns | 11.4A | 25V | SILICON | DRAIN | SWITCHING | 60V | 3.13W Ta 53W Tc | 45.6A | -60V | P-Channel | 550pF @ 25V | 175m Ω @ 5.7A, 10V | 4V @ 250μA | 11.4A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IXFN150N65X2 | IXYS | $37.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n65x2-datasheets-8511.pdf | SOT-227-4, miniBLOC | 19 Weeks | 145A | 650V | 1040W Tc | N-Channel | 21000pF @ 25V | 17m Ω @ 75A, 10V | 5V @ 8mA | 145A Tc | 355nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF710PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf710pbf-datasheets-8514.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.6Ohm | 3 | 1 | Single | 36W | 1 | TO-220AB | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 4V | 36W Tc | 540 ns | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 2 V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTD2955-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd2955t4g-datasheets-9712.pdf | -60V | -12A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.35mm | 2.38mm | Lead Free | 3 | 8 Weeks | No SVHC | 155MOhm | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 55W | 1 | Other Transistors | R-PSIP-T3 | 10 ns | 45ns | 48 ns | 26 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 60V | -2.8V | 55W Tj | 36A | -60V | P-Channel | 750pF @ 25V | -2.8 V | 180m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD16327Q3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | CSD16327 | Single | 1 | SILICON | DRAIN | SWITCHING | 25V | 25V | 74W Tc | 22A | 240A | 0.0065Ohm | 65 pF | 125 mJ | N-Channel | 1300pF @ 12.5V | 4m Ω @ 24A, 8V | 1.4V @ 250μA | 60A Tc | 8.4nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQP8P10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fqp8p10-datasheets-8558.pdf | -100V | -8A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 65W | 1 | Other Transistors | 11 ns | 110ns | 35 ns | 20 ns | 8A | 30V | -100V | SILICON | SWITCHING | 100V | 65W Tc | TO-220AB | 8A | -100V | P-Channel | 470pF @ 25V | -4 V | 530m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF830BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf830bpbf-datasheets-8568.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 8.2 ns | 16ns | 16 ns | 42 ns | 5.3A | 20V | SILICON | SWITCHING | 104W Tc | TO-220AB | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf820pbf-datasheets-8574.pdf | 500V | 2.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | 1 | Single | 50W | 1 | TO-220AB | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 4V | 50W Tc | 520 ns | 3Ohm | 500V | N-Channel | 360pF @ 25V | 4 V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQP7P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqp7p06-datasheets-8586.pdf | -60V | -7A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 410MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 45W | 1 | Other Transistors | Not Qualified | 7 ns | 50ns | 25 ns | 7.5 ns | 7A | 25V | -60V | SILICON | SWITCHING | 60V | -4V | 45W Tc | TO-220AB | 7A | 28A | 90 mJ | -60V | P-Channel | 295pF @ 25V | -4 V | 410m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 8.2nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| IRFB3806PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3806trlpbf-datasheets-7690.pdf | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 15.8MOhm | 3 | EAR99 | Tin | No | Single | 71W | 1 | FET General Purpose Power | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 4V | 71W Tc | TO-220AB | 33 ns | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF9520PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf9520pbf-datasheets-8466.pdf | -100V | -6.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 600mOhm | 3 | No | 1 | Single | 60W | 1 | TO-220AB | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | -6.8A | 20V | 100V | -4V | 60W Tc | 200 ns | 600mOhm | -100V | P-Channel | 390pF @ 25V | -2 V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| CSD17318Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17318q2t-datasheets-7918.pdf | 6-WDFN Exposed Pad | 2mm | 2mm | 6 | 6 Weeks | 6 | ACTIVE (Last Updated: 3 days ago) | yes | 750μm | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | NOT SPECIFIED | CSD17318 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 30V | 30V | 16W Tc | 10A | 0.03Ohm | 51 pF | 7.7 mJ | N-Channel | 879pF @ 15V | 15.1m Ω @ 8A, 8V | 1.2V @ 250μA | 25A Tc | 6nC @ 4.5V | 2.5V 8V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4858N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntd4858nt4g-datasheets-0262.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 2W | 1 | FET General Purpose Power | 17.3ns | 2.8 ns | 23.8 ns | 13.6A | 20V | SILICON | DRAIN | SWITCHING | 1.3W Ta 54.5W Tc | 25V | N-Channel | 1563pF @ 12V | 6.2m Ω @ 30A, 10V | 2.5V @ 250μA | 11.2A Ta 73A Tc | 19.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0106N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/microchiptechnology-vp0106n3g-datasheets-8357.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | 4 ns | 5ns | 4 ns | 8 ns | 250mA | 20V | SILICON | SWITCHING | 60V | 1W Tc | 0.25A | 8Ohm | 8 pF | -60V | P-Channel | 60pF @ 25V | 8 Ω @ 500mA, 10V | 3.5V @ 1mA | 250mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB020N10N5LFATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb020n10n5lfatma1-datasheets-7522.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 13 Weeks | 1 | 313W | 150°C | PG-TO263-3 | 7 ns | 128 ns | 29A | 20V | 100V | 313W Tc | 1.8mOhm | 100V | N-Channel | 840pF @ 50V | 2mOhm @ 100A, 10V | 4.1V @ 270μA | 120A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL520NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl520npbf-datasheets-8371.pdf | 100V | 10A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 220mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 48W | 1 | FET General Purpose Power | Not Qualified | 4 ns | 35ns | 22 ns | 23 ns | 10A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 48W Tc | TO-220AB | 160 ns | 85 mJ | 100V | N-Channel | 440pF @ 25V | 2 V | 180m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| 2N7002NXAKR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-2n7002nxakr-datasheets-8388.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | 60V | 265mW Ta 1.33W Tc | N-Channel | 20pF @ 10V | 4.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 190mA Ta 300mA Tc | 430pC @ 4.5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ESTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz44estrlpbf-datasheets-8378.pdf | 60V | 48A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 23mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | R-PSSO-G2 | 12 ns | 60ns | 70 ns | 70 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | 220 mJ | 60V | N-Channel | 1360pF @ 25V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLB8314PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-irlb8314pbf-datasheets-8400.pdf | TO-220-3 | 12 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 130A | 30V | 1.7V | 125W Tc | N-Channel | 5050pF @ 15V | 2.4m Ω @ 68A, 10V | 2.2V @ 100μA | 130A Tc | 60nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP3N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp3n30-datasheets-8407.pdf | 300V | 3.2A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 55W | 1 | FET General Purpose Power | 10 ns | 40ns | 25 ns | 10 ns | 3.2A | 30V | SILICON | SWITCHING | 1.65V | 55W Tc | TO-220AB | 300V | N-Channel | 230pF @ 25V | 2.2 Ω @ 1.6A, 10V | 5V @ 250μA | 3.2A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| VN2410L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/microchiptechnology-vn2410lg-datasheets-8431.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.334mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | 2A | e3 | 240V | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | Not Qualified | 8 ns | 8ns | 24 ns | 23 ns | 190mA | 20V | SILICON | SWITCHING | 1W Tc | 20 pF | 240V | N-Channel | 125pF @ 25V | 10 Ω @ 500mA, 10V | 2V @ 1mA | 190mA Tj | 2.5V 10V | ±20V |
