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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM40010EL-GE3 | Vishay Siliconix | $28.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum40010elge3-datasheets-8898.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | 120A | 300A | 0.0016Ohm | 320 mJ | N-Channel | 11155pF @ 30V | 1.6m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STF10N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf10n60dm2-datasheets-8916.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF10N | 600V | 25W Tc | N-Channel | 529pF @ 100V | 530m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R1K2C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp90r1k2c3xksa1-datasheets-8923.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 83W | 1 | 70 ns | 20ns | 40 ns | 400 ns | 5.1A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83W Tc | TO-220AB | 68 mJ | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3306GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfb3306gpbf-datasheets-8930.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | 3 | 10 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 76ns | 77 ns | 40 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 620A | 0.0042Ohm | 60V | N-Channel | 4520pF @ 50V | 4 V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQPF33N10L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf33n10l-datasheets-8938.pdf | 100V | 18A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 10 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 41W | 1 | FET General Purpose Power | 17 ns | 470ns | 120 ns | 70 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 41W Tc | 72A | 0.055Ohm | 100V | N-Channel | 1630pF @ 25V | 52m Ω @ 9A, 10V | 2V @ 250μA | 18A Tc | 40nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF640NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf640nstrlpbf-datasheets-9047.pdf | 200V | 18A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 15.01mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 150mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | Single | 30 | 150W | 1 | FET General Purpose Power | 175°C | 10 ns | 19ns | 5.5 ns | 23 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | 72A | 247 mJ | 200V | N-Channel | 1160pF @ 25V | 4 V | 150m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF9Z10PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z10pbf-datasheets-8836.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | -4V | 43W Tc | 500mOhm | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQP4N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp4n80-datasheets-8850.pdf | 800V | 3.9A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 45ns | 35 ns | 35 ns | 3.9A | 30V | SILICON | SWITCHING | 130W Tc | TO-220AB | 460 mJ | 800V | N-Channel | 880pF @ 25V | 3.6 Ω @ 1.95A, 10V | 5V @ 250μA | 3.9A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFU7440PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7440trpbf-datasheets-6297.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 12 Weeks | No SVHC | 2.4MOhm | 3 | EAR99 | No | Single | 140W | 1 | FET General Purpose Power | 11 ns | 39ns | 34 ns | 51 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3V | 140W Tc | 760A | 40V | N-Channel | 4610pF @ 25V | 3 V | 2.4m Ω @ 90A, 10V | 3.9V @ 100μA | 90A Tc | 134nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDPF55N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp55n06-datasheets-8740.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 5 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Single | 48W | 1 | FET General Purpose Power | 30 ns | 130ns | 95 ns | 70 ns | 55A | 25V | SILICON | ISOLATED | SWITCHING | 48W Tc | TO-220AB | 220A | 0.022Ohm | 480 mJ | 60V | N-Channel | 1510pF @ 25V | 22m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 37nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IRF720SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf720spbf-datasheets-8875.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 3.1W Ta 50W Tc | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB035N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb035n08n3gatma1-datasheets-8879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | no | EAR99 | No | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 214W | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 79ns | 14 ns | 45 ns | 100A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 214W Tc | 400A | 0.0035Ohm | N-Channel | 8110pF @ 40V | 3.5m Ω @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP5NK50ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp5nk50zfp-datasheets-8885.pdf | TO-220-3 Full Pack | 2.54mm | 6.35mm | 6.35mm | 3 | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP5N | 3 | Single | 25W | 1 | FET General Purpose Power | 15 ns | 10ns | 15 ns | 32 ns | 4.4A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 70W Tc | TO-220AB | 500V | N-Channel | 535pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SPP04N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp04n80c3xksa1-datasheets-8893.pdf | TO-220-3 | 3 | 18 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 63W Tc | TO-220AB | 4A | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.3 Ω @ 2.5A, 10V | 3.9V @ 240μA | 4A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB030N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb030n08n3gatma1-datasheets-8900.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 13 Weeks | No SVHC | 7 | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 7 | NOT SPECIFIED | 214W | 1 | Not Qualified | R-PSSO-G6 | 23 ns | 79ns | 14 ns | 45 ns | 160A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 214W Tc | 640A | 0.003Ohm | N-Channel | 8110pF @ 40V | 3m Ω @ 100A, 10V | 3.5V @ 155μA | 160A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN2R8-40PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn2r840ps127-datasheets-8906.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 211W | 1 | 28 ns | 29ns | 23 ns | 52 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 211W Tc | TO-220AB | 797A | 0.0028Ohm | 407 mJ | 40V | N-Channel | 4491pF @ 20V | 2.8m Ω @ 10A, 10V | 4V @ 1mA | 100A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14SPBF | Vishay Siliconix | $7.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz14spbf-datasheets-8912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 200mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 3.7W Ta 43W Tc | 130 ns | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| FDP8896 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp8896-datasheets-8807.pdf | 30V | 92A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 10 Weeks | 5.9MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 60A | 8541.29.00.95 | e3 | Tin (Sn) | 30V | Single | 80W | 1 | FET General Purpose Power | 9 ns | 103ns | 44 ns | 56 ns | 92A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | TO-220AB | 74 mJ | 30V | N-Channel | 2525pF @ 15V | 5.9m Ω @ 35A, 10V | 2.5V @ 250μA | 16A Ta 92A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPA04N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa04n80c3xksa1-datasheets-8821.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 38W Tc | TO-220AB | 4A | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.3 Ω @ 2.5A, 10V | 3.9V @ 240μA | 4A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf5n80k5-datasheets-8828.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | STF5N | 800V | 20W Tc | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Ta | 5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfd020pbf-datasheets-8701.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 3 | 8 Weeks | Unknown | 100mOhm | 4 | EAR99 | No | DUAL | 3 | Single | 1.3W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.7 ns | 55ns | 26 ns | 16 ns | 2.4A | 20V | SILICON | SWITCHING | 50V | 4V | 1W Tc | 60V | N-Channel | 400pF @ 25V | 100m Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7884BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7884bdpt1ge3-datasheets-8917.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.6W | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 14ns | 11 ns | 38 ns | 18.5A | 20V | SILICON | DRAIN | SWITCHING | 4.6W Ta 46W Tc | 50A | 54 mJ | 40V | N-Channel | 3540pF @ 20V | 1 V | 7.5m Ω @ 16A, 10V | 3V @ 250μA | 58A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFR9214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 1 | Single | 50W | 1 | D-Pak | 220pF | 11 ns | 14ns | 17 ns | 20 ns | 2.7A | 20V | 250V | -4V | 50W Tc | 220 ns | 3Ohm | -250V | P-Channel | 220pF @ 25V | -4 V | 3Ohm @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STD11NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std11nm65n-datasheets-8733.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STD11 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 110W Tc | 44A | 0.455Ohm | 147 mJ | N-Channel | 800pF @ 50V | 455m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDP55N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp55n06-datasheets-8740.pdf | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 22mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 114W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 130ns | 95 ns | 70 ns | 55A | 25V | SILICON | SWITCHING | 2V | 114W Tc | TO-220AB | 220A | 480 mJ | 60V | N-Channel | 1510pF @ 25V | 22m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 37nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| FQPF4N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqpf4n90c-datasheets-8750.pdf | 900V | 4A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 47W | 1 | FET General Purpose Power | 25 ns | 50ns | 35 ns | 40 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 47W Tc | TO-220AB | 4A | 570 mJ | 900V | N-Channel | 960pF @ 25V | 4.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| BUK961R6-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk961r640e118-datasheets-8662.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 357W | 1 | R-PSSO-G2 | 95 ns | 118ns | 119 ns | 195 ns | 120A | 15V | 40V | SILICON | DRAIN | SWITCHING | 357W Tc | 0.0016Ohm | 1008 mJ | 40V | N-Channel | 16400pF @ 25V | 1.4m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 120nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R6-60PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn4r660ps127-datasheets-8766.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 211W | 1 | 26 ns | 24ns | 22 ns | 58 ns | 100A | 20V | 60V | SILICON | DRAIN | SWITCHING | 211W Tc | TO-220AB | 565A | 0.0046Ohm | 60V | N-Channel | 4426pF @ 30V | 4.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 70.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SUD70090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sud70090ege3-datasheets-8773.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 125W Tc | 120A | 0.0089Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8447L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdp8447l-datasheets-8782.pdf | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | 8.7MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 2W | 1 | FET General Purpose Power | 9 ns | 7ns | 4 ns | 28 ns | 12A | 20V | SILICON | SWITCHING | 2W Ta 60W Tc | TO-220AB | 50A | 40V | N-Channel | 2500pF @ 20V | 8.7m Ω @ 14A, 10V | 3V @ 250μA | 12A Ta 50A Tc | 49nC @ 10V | 4.5V 10V | ±20V |
