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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Lead Length | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP8447L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdp8447l-datasheets-8782.pdf | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | 8.7MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 2W | 1 | FET General Purpose Power | 9 ns | 7ns | 4 ns | 28 ns | 12A | 20V | SILICON | SWITCHING | 2W Ta 60W Tc | TO-220AB | 50A | 40V | N-Channel | 2500pF @ 20V | 8.7m Ω @ 14A, 10V | 3V @ 250μA | 12A Ta 50A Tc | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N04S401ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb180n04s401atma1-datasheets-8775.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 16 Weeks | 7 | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 35 ns | 24ns | 41 ns | 38 ns | 180A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 188W Tc | 0.0013Ohm | 550 mJ | N-Channel | 14000pF @ 25V | 1.3m Ω @ 100A, 10V | 4V @ 140μA | 180A Tc | 176nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 8 Weeks | 329.988449mg | Unknown | 7Ohm | 3 | 9.65mm | 1 | Single | 50W | 1 | TO-251AA | 270pF | 11 ns | 10ns | 24 ns | 25 ns | 1.8A | 20V | 400V | -4V | 50W Tc | 7Ohm | -400V | P-Channel | 270pF @ 25V | -4 V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7370DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7370dpt1ge3-datasheets-8633.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 30 ns | 50 ns | 9.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 50A | 60V | N-Channel | 11m Ω @ 12A, 10V | 4V @ 250μA | 9.6A Ta | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK962R8-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk962r860e118-datasheets-8534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Brass | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 53 ns | 88ns | 81 ns | 115 ns | 120A | 15V | 60V | DRAIN | SWITCHING | 26 AWG | 24 AWG | 324W Tc | Gold, Tin | 0.0028Ohm | 60V | N-Channel | 15600pF @ 25V | 2.5m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 92nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PHP20NQ20T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-php20nq20t127-datasheets-8545.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 150W Tc | 20A | 80A | 0.13Ohm | 252 mJ | N-Channel | 2470pF @ 25V | 130m Ω @ 10A, 10V | 4V @ 1mA | 20A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R6-100BSEJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn7r6100bsej-datasheets-8524.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3.949996g | 3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 31 ns | 48ns | 47 ns | 82 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 296W Tc | 0.0076Ohm | 426 mJ | 100V | N-Channel | 7110pF @ 50V | 7.6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tj | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | -400V | -1.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 7Ohm | 3 | No | 18A | 400V | 1 | Single | 50W | 1 | D-Pak | 270pF | 11 ns | 10ns | 24 ns | 25 ns | -1.8A | 20V | 400V | -4V | 50W Tc | 7Ohm | -400V | P-Channel | 270pF @ 25V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF8N50NZU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf8n50nzu-datasheets-8586.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 40W | 1 | FET General Purpose Power | 17 ns | 34ns | 27 ns | 43 ns | 6.5A | 25V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 26A | 80 mJ | 500V | N-Channel | 735pF @ 25V | 1.2 Ω @ 4A, 10V | 5V @ 250μA | 6.5A Tc | 18nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK964R7-80E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk964r780e118-datasheets-8553.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 324W | 1 | R-PSSO-G2 | 54.2 ns | 95.7ns | 82.3 ns | 112 ns | 120A | 15V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 324W Tc | 667A | 0.0047Ohm | 80V | N-Channel | 15340pF @ 25V | 4.5m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 92.1nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn2r030pl127-datasheets-8609.pdf | TO-220-3 | 31.75mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 453.59237mg | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 211W | 1 | 63 ns | 125ns | 59 ns | 111 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 211W Tc | TO-220AB | 0.0028Ohm | 555 mJ | 30V | N-Channel | 6810pF @ 12V | 2.1m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 117nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK962R5-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk962r560e118-datasheets-8617.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | No | e3 | YES | SINGLE | GULL WING | 3 | 357W | 1 | R-PSSO-G2 | 71 ns | 119ns | 128 ns | 224 ns | 120A | 2.1V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 357W Tc | 1019A | 0.0025Ohm | 655 mJ | 60V | N-Channel | 17450pF @ 25V | 2.5m Ω @ 25A, 5V | 2.1V @ 1mA | 120A Tc | 120nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | 1 | Single | 2.5W | 1 | FET General Purpose Power | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | SILICON | DRAIN | SWITCHING | 100V | 2V | 2.5W Ta 25W Tc | N-Channel | 250pF @ 25V | 540m Ω @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 8 Weeks | 329.988449mg | Unknown | 3.6Ohm | 3 | No | 1 | Single | 2.5W | 1 | 150°C | TO-251AA | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 4V | 2.5W Ta 25W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD3680 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd3680-datasheets-8016.pdf | 100V | 25A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 260.37mg | 46MOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 68W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 8.5ns | 21 ns | 63 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 68W Ta | 26A | 245 mJ | 100V | N-Channel | 1735pF @ 50V | 46m Ω @ 6.1A, 10V | 4V @ 250μA | 25A Ta | 53nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86340 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc86340-datasheets-7733.pdf | 8-PowerWDFN | 3.4mm | 750μm | 3.4mm | 5 | 12 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 54W | 1 | FET General Purpose Power | S-PDSO-N5 | 20 ns | 16ns | 10 ns | 23 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 54W Tc | MO-240BA | 200A | 0.0065Ohm | 80V | N-Channel | 3885pF @ 40V | 6.5m Ω @ 14A, 10V | 4V @ 250μA | 14A Ta 48A Tc | 53nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK763R8-80E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk763r880e118-datasheets-8669.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 357W | 1 | R-PSSO-G2 | 38 ns | 48ns | 65 ns | 129 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 357W Tc | 786A | 488 mJ | 80V | N-Channel | 12030pF @ 25V | 3.8m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 169nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF60B217 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf60b217-datasheets-8690.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 83W Tc | TO-220AB | 225A | 0.009Ohm | 124 mJ | N-Channel | 2230pF @ 25V | 9m Ω @ 36A, 10V | 3.7V @ 50μA | 60A Tc | 66nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL24N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl24n60dm2-datasheets-8491.pdf | 8-PowerVDFN | Lead Free | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | STL24 | 600V | 125W Tc | N-Channel | 1055pF @ 100V | 220m Ω @ 9A, 10V | 5V @ 250μA | 15A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 74W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP4LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp4ln80k5-datasheets-8357.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STP4L | 800V | 60W Tc | N-Channel | 122pF @ 100V | 2.6 Ω @ 1A, 10V | 5V @ 100μA | 3A Tc | 3.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N04S402ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb120n04s402atma1-datasheets-8226.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 27 ns | 16ns | 30 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 158W Tc | 480A | 0.0018Ohm | 480 mJ | N-Channel | 10740pF @ 25V | 1.8m Ω @ 100A, 10V | 4V @ 110μA | 120A Tc | 134nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86326 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdd86326-datasheets-7411.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 62W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.6 ns | 3ns | 2.9 ns | 13.4 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 3.1V | 3.1W Ta 62W Tc | 8A | 40A | 80V | N-Channel | 1035pF @ 50V | 3.1 V | 23m Ω @ 8A, 10V | 4V @ 250μA | 8A Ta 37A Tc | 19nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R4-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn3r430pl127-datasheets-8384.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 4.1MOhm | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 114W | 1 | 40 ns | 73ns | 28 ns | 59 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 114W Tc | TO-220AB | 609A | 200 mJ | 30V | N-Channel | 3907pF @ 12V | 3.4m Ω @ 10A, 10V | 2.15V @ 1mA | 100A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF7P20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf7p20-datasheets-8391.pdf | -200V | -5.2A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 45W | 1 | Other Transistors | 15 ns | 110ns | 42 ns | 30 ns | 5.2A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 45W Tc | 20.8A | 0.69Ohm | 560 mJ | -200V | P-Channel | 770pF @ 25V | 690m Ω @ 2.6A, 10V | 5V @ 250μA | 5.2A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STU3LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std3n80k5-datasheets-8152.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STU3L | 800V | 45W Tc | N-Channel | 102pF @ 100V | 3.25 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 2.63nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI530NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfi530npbf-datasheets-8424.pdf | 100V | 11A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 110mOhm | 3 | EAR99 | AVALANCHE RATED | No | Single | 33W | 1 | FET General Purpose Power | 2.5kV | 6.4 ns | 27ns | 25 ns | 37 ns | 12A | 20V | 100V | SILICON | ISOLATED | SWITCHING | 4V | 41W Tc | TO-220AB | 190 ns | 60A | 100V | N-Channel | 640pF @ 25V | 4 V | 110m Ω @ 6.6A, 10V | 4V @ 250μA | 12A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPSA70R450P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r450p7sakma1-datasheets-8434.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 50W Tc | 25.9A | 0.45Ohm | N-Channel | 424pF @ 400V | 450m Ω @ 2.3A, 10V | 3.5V @ 120μA | 10A Tc | 13.1nC @ 400V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 280mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) - annealed | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 13 ns | 68ns | 29 ns | 15 ns | 8.8A | 20V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.5W Ta 42W Tc | -60V | P-Channel | 570pF @ 25V | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| HUF75321P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75321p3-datasheets-8463.pdf | 55V | 35A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | 34MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 93W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 55ns | 66 ns | 47 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-220AB | 55V | N-Channel | 680pF @ 25V | 34m Ω @ 35A, 10V | 4V @ 250μA | 35A Tc | 44nC @ 20V | 10V | ±20V |
