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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPU80R4K5P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipu80r4k5p7akma1-datasheets-7137.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 1 | R-PSIP-T3 | 1.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 13W Tc | 2.6A | 4.5Ohm | 1 mJ | N-Channel | 250pF @ 500V | 1.4 Ω @ 1.4A, 10V | 3.5V @ 200μA | 1.5A Tc | 4nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s403atma1-datasheets-7004.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 12ns | 16 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 94W Tc | 200 mJ | N-Channel | 5260pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 53μA | 80A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU13N06LTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqu13n06ltuws-datasheets-7246.pdf | 60V | 11A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 8.58mm | 2.3mm | Lead Free | 3 | 9 Weeks | 343.08mg | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | 1 | Single | 2.5W | 1 | FET General Purpose Power | 150°C | 8 ns | 90ns | 40 ns | 20 ns | 11A | 20V | SILICON | SWITCHING | 2.5V | 2.5W Ta 28W Tc | 44A | 90 mJ | 60V | N-Channel | 350pF @ 25V | 115m Ω @ 5.5A, 10V | 2.5V @ 250μA | 11A Tc | 6.4nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIR182DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir182dpt1re3-datasheets-7123.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 69.4W Tc | 117A | 200A | 0.0028Ohm | 61.25 mJ | N-Channel | 3250pF @ 30V | 2.8m Ω @ 15A, 10V | 3.6V @ 250μA | 60A Tc | 64nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTPF110N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | /files/onsemiconductor-ntpf110n65s3hf-datasheets-7204.pdf | TO-220-3 Full Pack | 12 Weeks | yes | compliant | e3 | Tin (Sn) | 650V | 240W Tc | N-Channel | 2635pF @ 400V | 110m Ω @ 15A, 10V | 5V @ 740μA | 30A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7112DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7112dnt1ge3-datasheets-6858.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 65 ns | 11.3A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 600mV | 1.5W Ta | 60A | 0.0075Ohm | 20 mJ | N-Channel | 2610pF @ 15V | 7.5m Ω @ 17.8A, 10V | 1.5V @ 250μA | 11.3A Tc | 27nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| PSMN7R6-60BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn7r660bs118-datasheets-7066.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 149W | 1 | R-PSSO-G2 | 19 ns | 21ns | 13 ns | 37 ns | 92A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 149W Tc | 0.0078Ohm | 54V | N-Channel | 2651pF @ 30V | 7.8m Ω @ 25A, 10V | 4V @ 1mA | 92A Tc | 38.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD15P10PGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-spd15p10pgbtma1-datasheets-7159.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | Contains Lead, Lead Free | 2 | 18 Weeks | No SVHC | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Not Halogen Free | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 128W | 1 | Not Qualified | R-PSSO-G2 | 9.5 ns | 23ns | 16 ns | 33 ns | 15A | 20V | -100V | SILICON | DRAIN | 100V | 128W Tc | TO-252AA | 60A | 0.24Ohm | -100V | P-Channel | 1280pF @ 25V | -3 V | 240m Ω @ 10.6A, 10V | 2.1V @ 1.54mA | 15A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK9608-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk960855b118-datasheets-7241.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.35mm | 6.35mm | 6.35mm | Lead Free | 2 | 12 Weeks | 4.535924g | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 3 | Single | 203W | 1 | R-PSSO-G2 | 29 ns | 123ns | 86 ns | 131 ns | 75A | 15V | 55V | SILICON | DRAIN | SWITCHING | 203W Tc | 55V | N-Channel | 5280pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 45nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMC8360LET40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmc8360let40-datasheets-7245.pdf | 8-PowerWDFN | 19 Weeks | 152.7mg | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 141A | 40V | 2.8W Ta 75W Tc | N-Channel | 5300pF @ 20V | 2.1m Ω @ 27A, 10V | 3V @ 250μA | 27A Ta 141A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2510N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-tn2510n8g-datasheets-7252.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 14 Weeks | 52.786812mg | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | Tin | No | e3 | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | R-PSSO-F3 | 10 ns | 10ns | 10 ns | 20 ns | 730mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 0.73A | 5A | 2Ohm | 100V | N-Channel | 125pF @ 25V | 1.5 Ω @ 750mA, 10V | 2V @ 1mA | 730mA Tj | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| DMTH6004LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6004lps13-datasheets-7103.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.6W Ta 138W Tc | 22A | 120A | 0.0031Ohm | 160 mJ | N-Channel | 4515pF @ 30V | 2.8m Ω @ 25A, 10V | 3V @ 250μA | 22A Ta 100A Tc | 96.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4630DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4630dyt1e3-datasheets-7093.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 25V | 3.5W Ta 7.8W Tc | N-Channel | 6670pF @ 15V | 2.7mOhm @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD7N60TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcd7n60tm-datasheets-6864.pdf | 600V | 7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 260.37mg | No SVHC | 600MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | FCD7N60 | Single | 83W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 55ns | 32 ns | 75 ns | 7A | 30V | 600V | SILICON | DRAIN | SWITCHING | 5V | 83W Tc | 7A | 600V | N-Channel | 920pF @ 25V | 5 V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STW37N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw37n60dm2ag-datasheets-6966.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW37N | NOT SPECIFIED | 28A | 600V | 210W Tc | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7110DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7110dnt1e3-datasheets-6972.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 12 ns | 10ns | 10 ns | 36 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.5W Ta | 60A | 20V | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHH180N60E-T1-GE3 | Vishay Siliconix | $4.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh180n60et1ge3-datasheets-5599.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 114W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK768R3-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk768r360e118-datasheets-6906.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | Tin | D2PAK | 2.92nF | 14 ns | 27ns | 27 ns | 27 ns | 75A | 20V | 60V | 60V | 137W Tc | 8.3mOhm | N-Channel | 2920pF @ 25V | 8.3mOhm @ 20A, 10V | 4V @ 1mA | 75A Tc | 43.1nC @ 10V | 8.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17301Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD17301 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 10.7 ns | 16.2ns | 10.5 ns | 28 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 1.1V | 3.2W Ta | 0.0037Ohm | 30V | N-Channel | 3480pF @ 15V | 1.1 V | 2.6m Ω @ 25A, 8V | 1.55V @ 250μA | 28A Ta 100A Tc | 25nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||
| SI6415DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6415dqt1e3-datasheets-8202.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 14 Weeks | 157.991892mg | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 16 ns | 17ns | 17 ns | 73 ns | 6.5A | 20V | SILICON | 30V | 1.5W Ta | 30A | -30V | P-Channel | 19m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR4104TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfr4104trpbf-datasheets-7029.pdf | 40V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 1.778mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 5.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 69ns | 36 ns | 37 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-252AA | 42 ns | 480A | 40V | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFH8201TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh8201trpbf-datasheets-7052.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | No SVHC | 8 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 3.6W | FET General Purpose Power | 27 ns | 54ns | 22 ns | 31 ns | 100A | 20V | 25V | 1.8V | 3.6W Ta 156W Tc | N-Channel | 7330pF @ 13V | 0.95m Ω @ 50A, 10V | 2.35V @ 150μA | 49A Ta 100A Tc | 111nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ494DP-T1-GE3 | Vishay Siliconix | $6.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij494dpt1ge3-datasheets-7024.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 150V | 69.4W Tc | N-Channel | 1070pF @ 75V | 23.2m Ω @ 15A, 10V | 4.5V @ 250μA | 36.8A Tc | 31nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4306GVTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zvn4306gvta-datasheets-7058.pdf | 60V | 2.1A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 330mOhm | no | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 3W | 1 | R-PDSO-G4 | 8 ns | 25ns | 16 ns | 30 ns | 2.1A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta | 60V | N-Channel | 350pF @ 25V | 330m Ω @ 3A, 10V | 3V @ 1mA | 2.1A Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TSM160N10LCR RLG | Taiwan Semiconductor Corporation | $12.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm160n10lcrrlg-datasheets-7026.pdf | 8-PowerTDFN | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 83W Tc | N-Channel | 4431pF @ 50V | 16m Ω @ 8A, 10V | 2.5V @ 250μA | 46A Tc | 73nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7456CDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7456cdpt1ge3-datasheets-7075.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 27.5A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 35.7W Tc | 50A | 0.0235Ohm | 100V | N-Channel | 730pF @ 50V | 1.2 V | 23.5m Ω @ 10A, 10V | 2.8V @ 250μA | 27.5A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| HUF76629D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-huf76629d3st-datasheets-7040.pdf | 100V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 260.37mg | 54mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.8 ns | 28ns | 60 ns | 67 ns | 20A | 16V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-252AA | 100V | N-Channel | 1285pF @ 25V | 52m Ω @ 20A, 10V | 3V @ 250μA | 20A Tc | 46nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| SPD04N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd04n60c3atma1-datasheets-6934.pdf | 650V | 4.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 40 Weeks | 3 | 50W | 1 | PG-TO252-3 | 490pF | 6 ns | 2.5ns | 9.5 ns | 58.5 ns | 4.5A | 20V | 600V | 600V | 50W Tc | 850mOhm | N-Channel | 490pF @ 25V | 950mOhm @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 950 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF20NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp20nk50z-datasheets-1509.pdf | TO-220-3 Full Pack | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF20 | 3 | Single | 40W | 1 | FET General Purpose Power | 28 ns | 20ns | 15 ns | 70 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 68A | 0.27Ohm | 850 mJ | 500V | N-Channel | 2600pF @ 25V | 270m Ω @ 8.5A, 10V | 4.5V @ 100μA | 17A Tc | 119nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP120N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp120n60ege3-datasheets-6775.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V |
