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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFU120NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr120ntrpbf-datasheets-8685.pdf | 100V | 9.4A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 9.75mm | 2.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 210mOhm | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | Single | 30 | 48W | 1 | FET General Purpose Power | Not Qualified | 175°C | 4.5 ns | 23ns | 32 ns | 9.4A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 48W Tc | 150 ns | 7.7A | 100V | N-Channel | 330pF @ 25V | 4 V | 210m Ω @ 5.6A, 10V | 4V @ 250μA | 9.4A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FCH25N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch25n60n-datasheets-7528.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 216W | 1 | FET General Purpose Power | 21 ns | 22ns | 5 ns | 68 ns | 25A | 30V | SILICON | SWITCHING | 2V | 216W Tc | TO-247AB | 75A | 600V | N-Channel | 3352pF @ 100V | 126m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTP130N15X4 | IXYS | $5.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp130n15x4-datasheets-7535.pdf | TO-220-3 | 15 Weeks | 150V | 400W Tc | N-Channel | 4770pF @ 25V | 8.5m Ω @ 70A, 10V | 4.5V @ 250μA | 130A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB029N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb029n06n3gatma1-datasheets-7548.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 188W | 1 | Not Qualified | R-PSSO-G2 | 35 ns | 120ns | 20 ns | 62 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3V | 188W Tc | 480A | N-Channel | 13000pF @ 30V | 2.9m Ω @ 100A, 10V | 4V @ 118μA | 120A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDB8447L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdb8447l-datasheets-7505.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 8.5MOhm | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 60W | 1 | FET General Purpose Power | 11 ns | 6ns | 4 ns | 28 ns | 50A | 20V | 40V | SILICON | DRAIN | SWITCHING | 1.9V | 3.1W Ta 60W Tc | 40V | N-Channel | 2620pF @ 20V | 1.9 V | 8.5m Ω @ 14A, 10V | 3V @ 250μA | 15A Ta 50A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB100N04S4H2ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipb100n04s4h2atma1-datasheets-7559.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 18 ns | 13ns | 21 ns | 19 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 115W Tc | 400A | 0.0024Ohm | 280 mJ | N-Channel | 7180pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 70μA | 100A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR638ADP-T1-RE3 | Vishay Siliconix | $2.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir638adpt1re3-datasheets-7448.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 104W Tc | N-Channel | 9100pF @ 100V | 0.88m Ω @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 165nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4897NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmfs4897nft1g-datasheets-7615.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 2 Weeks | No SVHC | 2MOhm | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 96.2W | 1 | FET General Purpose Power | 26 ns | 24ns | 13 ns | 36 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 2V | 950mW Ta 96.2W Tc | 288A | 30V | N-Channel | 5660pF @ 15V | 2m Ω @ 22A, 10V | 2.5V @ 1mA | 17A Ta 171A Tc | 83.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TN0106N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0106n3g-datasheets-7636.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 8 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 2 ns | 3ns | 3 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 1W Tc | 3Ohm | 8 pF | 60V | N-Channel | 60pF @ 25V | 3 Ω @ 500mA, 10V | 2V @ 500μA | 350mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR210PBF | Vishay Siliconix | $1.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | 200V | 2.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 4V | 2.5W Ta 25W Tc | 310 ns | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI4465ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4465adyt1ge3-datasheets-7618.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 3W | 1 | Other Transistors | 33 ns | 170ns | 112 ns | 168 ns | 13.7A | 8V | SILICON | -450mV | 3W Ta 6.5W Tc | 20A | 0.009Ohm | -8V | P-Channel | 9m Ω @ 14A, 4.5V | 1V @ 250μA | 85nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| BSB014N04LX3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsb014n04lx3gxuma1-datasheets-7657.pdf | 3-WDSON | Lead Free | 3 | 26 Weeks | No SVHC | 2 | yes | EAR99 | e4 | Silver/Nickel (Ag/Ni) | Halogen Free | BOTTOM | NO LEAD | 3 | 89W | 1 | Not Qualified | R-MBCC-N3 | 12 ns | 8.4ns | 10 ns | 60 ns | 36A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.8W Ta 89W Tc | 400A | N-Channel | 16900pF @ 20V | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 36A Ta 180A Tc | 196nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| ATP405-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/onsemiconductor-atp405tlh-datasheets-6920.pdf | ATPAK (2 leads+tab) | Lead Free | 2 Weeks | 33mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 3 | Single | 70W | 38 ns | 125ns | 150 ns | 220 ns | 40A | 20V | 70W Tc | 100V | N-Channel | 4000pF @ 20V | 33m Ω @ 20A, 10V | 40A Ta | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N03S4L02ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipd90n03s4l02atma1-datasheets-7493.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 136W Tc | 90A | 360A | 0.0022Ohm | 240 mJ | N-Channel | 9750pF @ 25V | 2.2m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 140nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN013-100BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn013100bs118-datasheets-7456.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 170W Tc | 68A | 272A | 0.0139Ohm | 127 mJ | N-Channel | 3195pF @ 50V | 13.9m Ω @ 15A, 10V | 4V @ 1mA | 68A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK765R2-40B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/nexperiausainc-buk765r240b118-datasheets-7266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 203W | 1 | R-PSSO-G2 | 15 ns | 51ns | 56 ns | 81 ns | 143A | 20V | 40V | SILICON | DRAIN | SWITCHING | 203W Tc | 75A | 0.0052Ohm | 494 mJ | 40V | N-Channel | 3789pF @ 25V | 5.2m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 52nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSC014N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc014n04lsatma1-datasheets-7274.pdf | 8-PowerTDFN | Contains Lead | 3 | 39 Weeks | 8 | no | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-F3 | 16 ns | 56ns | 11 ns | 55 ns | 32A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 96W Tc | 400A | 0.0019Ohm | 170 mJ | N-Channel | 4300pF @ 20V | 1.4m Ω @ 50A, 10V | 2V @ 250μA | 32A Ta 100A Tc | 61nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMS3500 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms3500-datasheets-7314.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 10 Weeks | 68.1mg | No SVHC | 14.5MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-N5 | 16 ns | 9ns | 6 ns | 48 ns | 9.2A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 96W Tc | 49A | 75V | N-Channel | 4765pF @ 40V | 1.8 V | 14.5m Ω @ 11.5A, 10V | 3V @ 250μA | 9.2A Ta 49A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 9.6nF | 150A | 45V | 960mW Ta 170W Tc | N-Channel | 9600pF @ 22.5V | 1.04mOhm @ 50A, 10V | 2.4V @ 1mA | 150A Tc | 99nC @ 10V | 1.04 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM089N08LCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm089n08lcrrlg-datasheets-6931.pdf | 8-PowerTDFN | 5 | 18 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 83W Tc | 12A | 268A | 0.011Ohm | 194 mJ | N-Channel | 6119pF @ 40V | 8.9m Ω @ 12A, 10V | 2.5V @ 250μA | 67A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16340Q3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD16340 | Single | 1 | 4.8 ns | 16.1ns | 5.2 ns | 13.8 ns | 60A | 10V | SILICON | DRAIN | SWITCHING | 25V | 25V | 3W Ta | 21A | 115A | 69 pF | N-Channel | 1350pF @ 12.5V | 4.5m Ω @ 20A, 8V | 1.1V @ 250μA | 60A Tc | 9.2nC @ 4.5V | 2.5V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHG180N60E-GE3 | Vishay Siliconix | $2.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg180n60ege3-datasheets-7378.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN10A09KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/diodesincorporated-zxmn10a09ktc-datasheets-7388.pdf | 100V | 7.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 17 Weeks | 3.949996g | No SVHC | 85mOhm | 3 | No | 1 | Single | 10.1W | 1 | TO-252-3 | 1.313nF | 6.8 ns | 5.3ns | 12.3 ns | 27.5 ns | 7.7A | 20V | 100V | 2.15W Ta | 100mOhm | 100V | N-Channel | 1313pF @ 50V | 85mOhm @ 4.6A, 10V | 4V @ 250μA | 5A Ta | 26nC @ 10V | 85 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB144N12N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb144n12n3gatma1-datasheets-7308.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 107W | 1 | Not Qualified | R-PSSO-G2 | 16 ns | 9ns | 4 ns | 24 ns | 56A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 107W Tc | 224A | 90 mJ | N-Channel | 3220pF @ 60V | 14.4m Ω @ 56A, 10V | 4V @ 61μA | 56A Ta | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STF34NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf34nm60n-datasheets-7430.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 105MOhm | 3 | yes | EAR99 | No | STF34N | 3 | Single | 40W | 1 | FET General Purpose Power | 17 ns | 34ns | 70 ns | 106 ns | 29A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 40W Tc | TO-220AB | 600V | N-Channel | 2722pF @ 100V | 105m Ω @ 14.5A, 10V | 4V @ 250μA | 31.5A Tc | 84nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510STRLPBF | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | 3.7W Ta 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4210A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvn4210a-datasheets-7464.pdf&product=diodesincorporated-zvn4210a-6831012 | 100V | 450mA | TO-226-3, TO-92-3 (TO-226AA) | 4.95mm | 4.95mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 1.5Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Power | 4 ns | 8ns | 8 ns | 20 ns | 450mA | 20V | SILICON | 2.4V | 700mW Ta | 0.45A | 100V | N-Channel | 100pF @ 25V | 1.5 Ω @ 1.5A, 10V | 2.4V @ 1mA | 450mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BUK9608-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk960855a118-datasheets-7469.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 253W | 1 | R-PSSO-G2 | 40 ns | 175ns | 167 ns | 280 ns | 125A | 10V | 55V | SILICON | DRAIN | SWITCHING | 253W Tc | 75A | 0.0085Ohm | 670 mJ | 55V | N-Channel | 6021pF @ 25V | 7.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 92nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| STP18NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp18nm60nd-datasheets-7263.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 290mOhm | 3 | EAR99 | No | STP18N | Single | 130W | 1 | 55 ns | 15.5ns | 18 ns | 13 ns | 13A | 25V | SILICON | DRAIN | SWITCHING | 600V | 110W Tc | TO-220AB | 52A | 187 mJ | 650V | N-Channel | 1030pF @ 50V | 290m Ω @ 6.5A, 10V | 5V @ 250μA | 13A Tc | 34nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6004LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6004lps13-datasheets-7103.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.6W Ta 138W Tc | 22A | 120A | 0.0031Ohm | 160 mJ | N-Channel | 4515pF @ 30V | 2.8m Ω @ 25A, 10V | 3V @ 250μA | 22A Ta 100A Tc | 96.3nC @ 10V | 4.5V 10V | ±20V |
