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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPL60R365P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipl60r365p7auma1-datasheets-7953.pdf | 4-PowerTSFN | 4 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 46W Tc | 26A | 0.365Ohm | 27 mJ | N-Channel | 555pF @ 400V | 365m Ω @ 2.7A, 10V | 4V @ 140μA | 10A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18511Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18511 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 104W Tc | 27A | 400A | 0.0035Ohm | 309 pF | 157 mJ | N-Channel | 5850pF @ 10V | 3.5m Ω @ 24A, 4.5V | 2.45V @ 250μA | 159A Tc | 63nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLU014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | 60V | 7.7A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 8 Weeks | 329.988449mg | Unknown | 200mOhm | 3 | No | 1 | Single | 2.5W | 1 | TO-251AA | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | 60V | 2V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB60R280P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r280p7atma1-datasheets-7968.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 53W Tc | 36A | 0.28Ohm | 38 mJ | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD65N55LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std65n55lf3-datasheets-7863.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 7MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD65N | 3 | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 25ns | 10 ns | 50 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 55V | N-Channel | 2200pF @ 25V | 8.5m Ω @ 32A, 10V | 2.5V @ 250μA | 80A Tc | 20nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN015-60PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn01560ps127-datasheets-7998.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | 3 | 12 Weeks | 9.071847g | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 86W | 1 | 12 ns | 13ns | 7 ns | 27 ns | 50A | 20V | 60V | SILICON | DRAIN | SWITCHING | 86W Tc | TO-220AB | 44 mJ | 60V | N-Channel | 1220pF @ 30V | 14.8m Ω @ 15A, 10V | 4V @ 1mA | 50A Tc | 20.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSB028N06NN3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsb028n06nn3gxuma1-datasheets-7912.pdf | 3-WDSON | Lead Free | 3 | 26 Weeks | No SVHC | 7 | yes | EAR99 | e4 | Silver/Nickel (Ag/Ni) | Halogen Free | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 78W | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | 21 ns | 9ns | 6 ns | 38 ns | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 2.2W Ta 78W Tc | 22A | 360A | 0.0028Ohm | 590 mJ | 60V | N-Channel | 12000pF @ 30V | 2.8m Ω @ 30A, 10V | 4V @ 102μA | 22A Ta 90A Tc | 143nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TN0620N3-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0620n3gp002-datasheets-7890.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | 1 | Single | 1 | 10 ns | 8ns | 20 ns | 20 ns | 250mA | 20V | SILICON | SWITCHING | 200V | 200V | 1W Tc | 0.25A | 6Ohm | N-Channel | 150pF @ 25V | 6 Ω @ 500mA, 10V | 1.6V @ 1mA | 250mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB1R4CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb1r4chc5g-datasheets-8057.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 36 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 28.4W Tc | 3A | 9A | 25 mJ | N-Channel | 257.3pF @ 100V | 1.4 Ω @ 900mA, 10V | 4V @ 250μA | 3A Tc | 7.12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC017N04NSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc017n04nsgatma1-datasheets-7849.pdf | 8-PowerTDFN | 5 | 16 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.5W Ta 139W Tc | 100A | 400A | 0.0017Ohm | 295 mJ | N-Channel | 8800pF @ 20V | 1.7m Ω @ 50A, 10V | 4V @ 85μA | 30A Ta 100A Tc | 108nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4408DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4408dyt1e3-datasheets-7898.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 4.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.6W | 1 | FET General Purpose Power | 42 ns | 42ns | 26 ns | 60 ns | 21A | 20V | SILICON | SWITCHING | 1.6W Ta | 20V | N-Channel | 1 V | 4.5m Ω @ 21A, 10V | 1V @ 250μA (Min) | 14A Ta | 32nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN4R6-60BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn4r660bs118-datasheets-7907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 211W | 1 | R-PSSO-G2 | 26 ns | 24ns | 22 ns | 58 ns | 100A | 20V | 60V | SILICON | DRAIN | SWITCHING | 211W Tc | 565A | 0.0044Ohm | 266 mJ | 60V | N-Channel | 4426pF @ 30V | 4.4m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 70.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN034-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn034100ps127-datasheets-7924.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 86W | 1 | 12 ns | 10ns | 9 ns | 28 ns | 32A | 20V | 100V | SILICON | DRAIN | SWITCHING | 86W Tc | TO-220AB | 42 mJ | 100V | N-Channel | 1201pF @ 50V | 34.5m Ω @ 15A, 10V | 4V @ 1mA | 32A Tc | 23.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | 500V | 2.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 24A | 500V | 1 | Single | 42W | 1 | D-Pak | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | 500V | 4V | 2.5W Ta 42W Tc | 520 ns | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPSA70R360P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r360p7sakma1-datasheets-7946.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 59.5W Tc | 34A | 0.36Ohm | N-Channel | 517pF @ 400V | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 12.5A Tc | 16.4nC @ 400V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHP18NQ10T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/nexperiausainc-php18nq10t127-datasheets-7745.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | 72A | 0.09Ohm | 70 mJ | N-Channel | 633pF @ 25V | 90m Ω @ 9A, 10V | 4V @ 1mA | 18A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU5N40TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqu5n40tu-datasheets-7765.pdf | 400V | 3.4A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 4 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 12 ns | 60ns | 30 ns | 20 ns | 3.4A | 30V | SILICON | SWITCHING | 2.5W Ta 45W Tc | 290 mJ | 400V | N-Channel | 460pF @ 25V | 1.6 Ω @ 1.7A, 10V | 5V @ 250μA | 3.4A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| PHP23NQ11T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-php23nq11t127-datasheets-7773.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 100W | 1 | 8 ns | 39ns | 24 ns | 26 ns | 23A | 20V | 110V | SILICON | DRAIN | SWITCHING | 100W Tc | 92A | 0.07Ohm | 110V | N-Channel | 830pF @ 25V | 70m Ω @ 13A, 10V | 4V @ 1mA | 23A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK964R1-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk964r140e118-datasheets-7542.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 182W | 1 | R-PSSO-G2 | 34 ns | 64ns | 60 ns | 88 ns | 75A | 10V | 40V | SILICON | DRAIN | SWITCHING | 182W Tc | 609A | 40V | N-Channel | 6650pF @ 25V | 3.5m Ω @ 25A, 10V | 2.1V @ 1mA | 75A Tc | 52.1nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7613-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7613100e118-datasheets-7649.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 17.5 ns | 34ns | 34.1 ns | 44.8 ns | 72A | 20V | 100V | SILICON | DRAIN | SWITCHING | 182W Tc | 288A | 100V | N-Channel | 4533pF @ 20V | 13m Ω @ 20A, 10V | 4V @ 1mA | 72A Tc | 97.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17311Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17311 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 12 ns | 18ns | 12 ns | 33 ns | 32A | 10V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 3.2W Ta | 200A | N-Channel | 4280pF @ 15V | 2m Ω @ 30A, 8V | 1.6V @ 250μA | 32A Ta 100A Tc | 31nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||
| PSMN016-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn016100ps127-datasheets-7833.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 148W | 1 | 17 ns | 23ns | 18 ns | 36 ns | 57A | 20V | 100V | SILICON | DRAIN | SWITCHING | 148W Tc | TO-220AB | 96A | 288A | 100V | N-Channel | 2404pF @ 50V | 16m Ω @ 15A, 10V | 4V @ 1mA | 57A Tj | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PHB47NQ10T,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-phb47nq10t118-datasheets-7825.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 166W | 1 | R-PSSO-G2 | 15 ns | 70ns | 45 ns | 83 ns | 47A | 20V | 100V | SILICON | DRAIN | SWITCHING | 166W Tc | 187A | 0.028Ohm | 45 mJ | 100V | N-Channel | 3100pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDMS1D4N03S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms1d4n03s-datasheets-7843.pdf | 8-PowerTDFN | 23 Weeks | 106mg | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | Single | 30V | 74W Tc | N-Channel | 10250pF @ 15V | 1.09m Ω @ 38A, 10V | 3V @ 1mA | 211A Tc | 65nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfu110pbf-datasheets-7868.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 25W | 1 | FET General Purpose Power | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 25W Tc | 75 mJ | 100V | N-Channel | 180pF @ 25V | 540m Ω @ 900mA, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TSM900N10CH X0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm900n10cprog-datasheets-9570.pdf | TO-251-3 Stub Leads, IPak | 20 Weeks | TO-251 (IPAK) | 100V | 50W Tc | N-Channel | 1480pF @ 50V | 90mOhm @ 5A, 10V | 2.5V @ 250μA | 15A Tc | 9.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB240L | Alpha & Omega Semiconductor Inc. | $0.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 176W | 1 | FET General Purpose Powers | 105A | 20V | Single | 40V | 1.9W Ta 176W Tc | N-Channel | 3510pF @ 20V | 2.6m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta 105A Tc | 72nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLB4132PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlb4132pbf-datasheets-7707.pdf | TO-220-3 | Lead Free | 12 Weeks | 3.5mOhm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 78A | 30V | 140W Tc | N-Channel | 5110pF @ 15V | 3.5m Ω @ 40A, 10V | 2.35V @ 100μA | 78A Tc | 54nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2002UPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2002ups13-datasheets-7725.pdf | 8-PowerTDFN | 5 | 17 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2.3W Ta | 100A | 0.0019Ohm | P-Channel | 12826pF @ 10V | 1.9m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 585nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF530STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.946308g | Unknown | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 3.7W Ta 88W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 2 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V |
