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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFU9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 280mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) - annealed | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 13 ns | 68ns | 29 ns | 15 ns | 8.8A | 20V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.5W Ta 42W Tc | -60V | P-Channel | 570pF @ 25V | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| HUF75321P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75321p3-datasheets-8463.pdf | 55V | 35A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | 34MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 93W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 55ns | 66 ns | 47 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-220AB | 55V | N-Channel | 680pF @ 25V | 34m Ω @ 35A, 10V | 4V @ 250μA | 35A Tc | 44nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FQP3N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp3n60c-datasheets-8305.pdf | TO-220-3 | Lead Free | 3 | 6 Weeks | 1.8g | 3.4Ohm | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 75W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 12 ns | 30ns | 35 ns | 35 ns | 3A | 30V | SILICON | SWITCHING | 75W Tc | TO-220AB | 3A | 600V | N-Channel | 565pF @ 25V | 3.4 Ω @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN013-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn013100ps127-datasheets-8315.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 170W | 1 | 20.7 ns | 25ns | 24 ns | 52.5 ns | 68A | 20V | 100V | SILICON | DRAIN | SWITCHING | 170W Tc | TO-220AB | 67A | 100V | N-Channel | 3195pF @ 50V | 13.9m Ω @ 15A, 10V | 4V @ 1mA | 68A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDB13AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdb13an06a0-datasheets-8111.pdf | 60V | 62A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 13.5MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 115W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 9 ns | 96ns | 26 ns | 24 ns | 62A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 115W Tc | 56 mJ | 60V | N-Channel | 1350pF @ 25V | 4 V | 13.5m Ω @ 62A, 10V | 4V @ 250μA | 10.9A Ta 62A Tc | 29nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| FQB5N90TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb5n90tm-datasheets-8201.pdf | 900V | 5.4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 7 Weeks | 1.31247g | No SVHC | 2.3Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.13W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28 ns | 65ns | 50 ns | 65 ns | 5.4A | 30V | SILICON | DRAIN | SWITCHING | 3V | 3.13W Ta 158W Tc | 660 mJ | 900V | N-Channel | 1550pF @ 25V | 2.3 Ω @ 2.7A, 10V | 5V @ 250μA | 5.4A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STU2N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std2n80k5-datasheets-6794.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | STU2N | Single | 1 | 8 ns | 19 ns | 2A | 30V | SILICON | SWITCHING | 800V | 800V | 45W Tc | 2A | 8A | 60.5 mJ | N-Channel | 105pF @ 100V | 4.5 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 9.5nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK764R0-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk764r055b118-datasheets-8346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.35mm | 6.35mm | 6.35mm | Lead Free | 2 | 12 Weeks | 4.535924g | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 23 ns | 51ns | 41 ns | 71 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | 774A | 0.004Ohm | 55V | N-Channel | 6776pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQP2N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp2n60c-datasheets-8233.pdf | 600V | 2A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 4.7Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 54W | 1 | FET General Purpose Power | 9 ns | 25ns | 28 ns | 24 ns | 2A | 30V | 600V | SILICON | SWITCHING | 4V | 54W Tc | TO-220AB | 2A | 8A | 600V | N-Channel | 235pF @ 25V | 4 V | 4.7 Ω @ 1A, 10V | 4V @ 250μA | 2A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FQPF5N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf5n40-datasheets-8243.pdf | 400V | 3A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 35W | 1 | FET General Purpose Power | 12 ns | 60ns | 30 ns | 20 ns | 3A | 30V | SILICON | ISOLATED | SWITCHING | 35W Tc | 190 ns | 3A | 290 mJ | 400V | N-Channel | 460pF @ 25V | 1.6 Ω @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN017-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn01780ps127-datasheets-8249.pdf | TO-220-3 | 3 | 12 Weeks | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 103W Tc | TO-220AB | 50A | 200A | 0.017Ohm | 55 mJ | N-Channel | 1573pF @ 40V | 17m Ω @ 10A, 10V | 4V @ 1mA | 50A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7606-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk760675b118-datasheets-8150.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 36 ns | 56ns | 48 ns | 128 ns | 159A | 20V | 75V | SILICON | DRAIN | SWITCHING | 300W Tc | 75A | 0.0056Ohm | 852 mJ | 75V | N-Channel | 7446pF @ 25V | 5.6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 91nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA60R360P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa60r360p7sxksa1-datasheets-8270.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 22W Tc | TO-220AB | 26A | 0.36Ohm | 27 mJ | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7556S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7556s-datasheets-8273.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 10 Weeks | 90mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 96W | 1 | FET General Purpose Power | R-PDSO-F5 | 20 ns | 9ns | 5.3 ns | 48 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 25V | 25V | 1.6V | 2.5W Ta 96W Tc | MO-240AA | 35A | 200A | N-Channel | 8965pF @ 13V | 1.6 V | 1.2m Ω @ 35A, 10V | 3V @ 1mA | 35A Ta 49A Tc | 133nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRL1404ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irl1404zstrlpbf-datasheets-8259.pdf | 40V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 3.1MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 180ns | 49 ns | 30 ns | 75mA | 16V | SILICON | DRAIN | SWITCHING | 2.7V | 230W Tc | 39 ns | 200A | 790A | 220 mJ | 40V | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 75A Tc | 110nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| IRFD9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfd9010pbf-datasheets-8302.pdf | -50V | -1.1A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 4 | No | Single | 1W | 4-DIP, Hexdip, HVMDIP | 240pF | 6.1 ns | 47ns | 39 ns | 13 ns | -1.1A | 20V | 50V | -4V | 1W Tc | 350mOhm | 50V | P-Channel | 240pF @ 25V | 500mOhm @ 580mA, 10V | 4V @ 250μA | 1.1A Tc | 11nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD16556Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD16556 | Single | 3.2W | 1 | FET General Purpose Powers | 17 ns | 34ns | 13 ns | 25 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 1.4V | 3.2W Ta 191W Tc | 40A | 249A | 530 mJ | 25V | N-Channel | 6180pF @ 15V | 1.07m Ω @ 30A, 10V | 1.7V @ 250μA | 100A Tc | 47nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PSMN015-100B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn015100b118-datasheets-8119.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 245 | 3 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 75A | 240A | 0.015Ohm | 320 mJ | N-Channel | 4900pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQP7N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqp7n20-datasheets-8160.pdf | 200V | 6.6A | TO-220-3 | Lead Free | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | Single | 63W | 65ns | 35 ns | 15 ns | 6.6A | 30V | 63W Tc | 200V | N-Channel | 400pF @ 25V | 690m Ω @ 3.3A, 10V | 5V @ 250μA | 6.6A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf540zlpbf-datasheets-8169.pdf | 100V | 36A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 26.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 92W | 1 | FET General Purpose Power | 15 ns | 51ns | 39 ns | 43 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 92W Tc | 100V | N-Channel | 1770pF @ 25V | 4 V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PSMN4R3-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn4r330pl127-datasheets-8184.pdf | TO-220-3 | 31.75mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 453.59237mg | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 103W | 1 | 28 ns | 58ns | 21 ns | 44 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 103W Tc | TO-220AB | 465A | 0.0062Ohm | 74 mJ | 30V | N-Channel | 2400pF @ 12V | 4.3m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 41.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFU320PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | 400V | 3.1A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 1.8Ohm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 42W | 1 | FET General Purpose Powers | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 400V | N-Channel | 350pF @ 25V | 1.8 Ω @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMTH6004SCTB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6004sctb13-datasheets-8195.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 22 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 4.7W Ta 136W Tc | N-Channel | 4556pF @ 30V | 3.4m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 95.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHB191NQ06LT,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-phb191nq06lt118-datasheets-8087.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 63 ns | 232ns | 178 ns | 273 ns | 75A | 15V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | 240A | 0.0044Ohm | 560 mJ | 55V | N-Channel | 7665pF @ 25V | 3.7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 95.6nC @ 5V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| SI4455DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4455dyt1ge3-datasheets-7920.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 295mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.1W | 1 | 11 ns | 28ns | 35 ns | 52 ns | 2A | 20V | SILICON | SWITCHING | 150V | 3.1W Ta 5.9W Tc | 2A | P-Channel | 1190pF @ 50V | 295m Ω @ 4A, 10V | 4V @ 250μA | 2.8A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQPF20N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqpf20n06l-datasheets-8077.pdf | 60V | 15.7A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 8 Weeks | 2.27g | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 30W | 1 | FET General Purpose Power | Not Qualified | 10 ns | 156ns | 70 ns | 35 ns | 15.7A | 20V | SILICON | ISOLATED | SWITCHING | 1V | 30W Tc | 62.8A | 0.07Ohm | 60V | N-Channel | 630pF @ 25V | 55m Ω @ 7.85A, 10V | 2.5V @ 250μA | 15.7A Tc | 13nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFU420PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | 500V | 2.4A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 12 Weeks | 329.988449mg | Unknown | 3Ohm | 3 | yes | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 42W | 1 | FET General Purpose Power | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 8A | 400 mJ | 500V | N-Channel | 360pF @ 25V | 3 Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFBC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbc20pbf-datasheets-8092.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 4.4Ohm | 3 | Tin | 1 | Single | 50W | 1 | TO-220AB | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 4V | 50W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4 V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD18533Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 6 Weeks | 4.7mOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18533 | Single | NOT SPECIFIED | 1 | 5.2 ns | 5.5ns | 2 ns | 15 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.2W Ta 116W Tc | 17A | 267A | 9 pF | 140 mJ | N-Channel | 2750pF @ 30V | 5.9m Ω @ 18A, 10V | 2.3V @ 250μA | 17A Ta 100A Tc | 36nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDMC013P030Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc013p030z-datasheets-8132.pdf | 8-PowerWDFN | 23 Weeks | 165.33333mg | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | NOT SPECIFIED | Single | NOT SPECIFIED | 30V | 30W Tc | P-Channel | 5785pF @ 15V | 7m Ω @ 14A, 10V | 3V @ 250μA | 54A Tc | 135nC @ 10V | 4.5V 10V | ±25V |
