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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT20M16LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m16lfllg-datasheets-0946.pdf | 200V | 100A | TO-264-3, TO-264AA | Lead Free | 25 Weeks | No | 694W | 1 | TO-264 [L] | 7.22nF | 15 ns | 31ns | 4 ns | 29 ns | 100A | 30V | 200V | N-Channel | 7220pF @ 25V | 16mOhm @ 50A, 10V | 5V @ 2.5mA | 100A Tc | 140nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfn48n50q-datasheets-0909.pdf | SOT-227-4, miniBLOC | 4 | 44g | No SVHC | 120mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 22ns | 10 ns | 75 ns | 44A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 500W Tc | 176A | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 4 V | 120m Ω @ 500mA, 10V | 4V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| APT10090SLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10090bllg-datasheets-5246.pdf | 1kV | 12A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 520W | 298W | 1 | D3 [S] | 10.2nF | 9 ns | 5ns | 4 ns | 23 ns | 12A | 30V | 1000V | N-Channel | 1969pF @ 25V | 900mOhm @ 6A, 10V | 5V @ 1mA | 12A Tc | 71nC @ 10V | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKG25N80C | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixkg25n80c-datasheets-0933.pdf | ISO264™ | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 25ns | 10 ns | 75 ns | 25A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 0.15Ohm | 690 mJ | 800V | N-Channel | 150m Ω @ 9A, 10V | 4V @ 2mA | 25A Tc | 166nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 23MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | Not Qualified | 80ns | 30 ns | 75 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 200V | N-Channel | 9000pF @ 25V | 23m Ω @ 500mA, 10V | 4V @ 8mA | 100A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTR120P20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr120p20t-datasheets-0935.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 595W Tc | 400A | 0.032Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 32m Ω @ 60A, 10V | 4.5V @ 250μA | 90A Tc | 740nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR40N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfr40n90p-datasheets-0936.pdf | ISOPLUS247™ | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50ns | 46 ns | 77 ns | 21A | SILICON | ISOLATED | SWITCHING | 300W Tc | 80A | 0.23Ohm | 1500 mJ | 900V | N-Channel | 14000pF @ 25V | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 21A Tc | 230nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFX26N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfx26n100p-datasheets-0938.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | 45ns | 50 ns | 72 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 780W Tc | 65A | 1000 mJ | 1kV | N-Channel | 11900pF @ 25V | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 26A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT10045B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10045b2fllg-datasheets-0939.pdf | 1kV | 23A | TO-247-3 Variant | Lead Free | 3 | No | 565W | 565W | 1 | T-MAX™ [B2] | 4.35nF | 10 ns | 5ns | 8 ns | 30 ns | 23A | 30V | 1000V | N-Channel | 4350pF @ 25V | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 23A Tc | 154nC @ 10V | 460 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX60N55Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx60n55q2-datasheets-0940.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 14ns | 9 ns | 57 ns | 60A | 30V | SILICON | DRAIN | 735W Tc | TO-264AA | 240A | 0.088Ohm | 4000 mJ | 550V | N-Channel | 6900pF @ 25V | 88m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN100N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n65x2-datasheets-0941.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 650V | 595W Tc | N-Channel | 10800pF @ 25V | 30m Ω @ 50A, 10V | 5V @ 4mA | 78A Tc | 183nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK26N100P | IXYS | $27.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfx26n100p-datasheets-0938.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 50 ns | 72 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 780W Tc | 26A | 65A | 0.39Ohm | 1kV | N-Channel | 11900pF @ 25V | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 26A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| HCT7000M | TT Electronics/Optek Technology | $222.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/ttelectronicsoptektechnology-hct7000m-datasheets-0943.pdf | 3-SMD, No Lead | 3.175mm | 1.3716mm | 2.667mm | 15 Weeks | 3 | Single | 300mW | 3-SMD | 60pF | 10 ns | 10 ns | 200mA | 40V | 60V | 300mW Ta | 5Ohm | N-Channel | 60pF @ 25V | 5Ohm @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 5 Ω | 10V | ±40V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTE250N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-227-4, miniBLOC | 3 | Single | 730W | 250A | 100V | 5mOhm | 100V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL38N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfl38n100p-datasheets-0926.pdf | ISOPLUSi5-Pak™ | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 71 ns | 29A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 520W Tc | 120A | 2000 mJ | 1kV | N-Channel | 24000pF @ 25V | 230m Ω @ 19A, 10V | 6.5V @ 1mA | 29A Tc | 350nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFK52N60Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfk52n60q2-datasheets-0927.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 23 ns | 13ns | 8.5 ns | 56 ns | 52A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 208A | 0.115Ohm | 4000 mJ | 600V | N-Channel | 6800pF @ 25V | 115m Ω @ 500mA, 10V | 4.5V @ 8mA | 52A Tc | 198nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFX32N80Q3 | IXYS | $26.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n80q3-datasheets-3738.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | No | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 80A | 0.27Ohm | 3000 mJ | 800V | N-Channel | 6940pF @ 25V | 270m Ω @ 16A, 10V | 6.5V @ 4mA | 32A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTX240N075L2 | IXYS | $29.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtk240n075l2-datasheets-0923.pdf | TO-247-3 | 28 Weeks | compliant | 75V | 960W Tc | N-Channel | 19000pF @ 25V | 7m Ω @ 120A, 10V | 4.5V @ 3mA | 240A Tc | 546nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6017LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6017lfllg-datasheets-0932.pdf | 600V | 35A | TO-264-3, TO-264AA | Lead Free | 3 | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 500W | 1 | R-PSFM-T3 | 11 ns | 7ns | 6 ns | 26 ns | 35A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | N-Channel | 4500pF @ 25V | 170m Ω @ 17.5A, 10V | 5V @ 2.5mA | 35A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFE73N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe73n30q-datasheets-0915.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 36ns | 12 ns | 82 ns | 66A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400W Tc | 292A | 2500 mJ | 300V | N-Channel | 6400pF @ 25V | 46m Ω @ 36.5A, 10V | 4V @ 4mA | 66A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTK120P20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | 1.04kW | SINGLE | 3 | 150°C | 1 | Other Transistors | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 400A | 0.03Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 30m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 740nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10078SLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10078sllg-datasheets-0917.pdf | 1kV | 14A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 32 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | Pure Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | 30 | 403W | 1 | R-PSSO-G2 | 9 ns | 8ns | 9 ns | 30 ns | 14A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 403W Tc | 56A | 0.78Ohm | N-Channel | 2525pF @ 25V | 780m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFN44N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn44n80p-datasheets-0918.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 694W | 1 | 22ns | 27 ns | 75 ns | 39A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 694W Tc | 800V | N-Channel | 12000pF @ 25V | 190m Ω @ 500mA, 10V | 5V @ 8mA | 39A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| APT6011B2VRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6011b2vrg-datasheets-0919.pdf | 600V | 49A | TO-247-3 Variant | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 625W | 1 | T-MAX™ [B2] | 8.9nF | 17 ns | 16ns | 6 ns | 65 ns | 49A | 30V | 600V | N-Channel | 8900pF @ 25V | 110mOhm @ 24.5A, 10V | 4V @ 2.5mA | 49A Tc | 450nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1201R4SFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1201r4bfllg-datasheets-0874.pdf | 1.2kV | 9A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 16 Weeks | 3 | Tin | No | 520W | 300W | 1 | D3 [S] | 7.9nF | 8 ns | 5ns | 11 ns | 27 ns | 9A | 30V | 1200V | N-Channel | 2500pF @ 25V | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 9A Tc | 120nC @ 10V | 300 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB52N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfb52n90p-datasheets-0921.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 80ns | 42 ns | 95 ns | 52A | 30V | SILICON | DRAIN | SWITCHING | 3.5V | 1250W Tc | 104A | 0.16Ohm | 2000 mJ | 900V | N-Channel | 19000pF @ 25V | 3.5 V | 160m Ω @ 26A, 10V | 6.5V @ 1mA | 52A Tc | 308nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTK240N075L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtk240n075l2-datasheets-0923.pdf | TO-264-3, TO-264AA | 26 Weeks | compliant | 75V | 960W Tc | N-Channel | 19000pF @ 25V | 7m Ω @ 120A, 10V | 4.5V @ 3mA | 240A Tc | 546nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40N60JCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40n60jcu3-datasheets-0924.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | 4 | 36 Weeks | 30.000004g | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 290W | 1 | FET General Purpose Power | 20 ns | 30ns | 10 ns | 115 ns | 40A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 290W Tc | 0.07Ohm | N-Channel | 7015pF @ 25V | 70m Ω @ 20A, 10V | 3.9V @ 1mA | 40A Tc | 259nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR90N20Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 200V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5010B2VRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010b2vrg-datasheets-0908.pdf | 500V | 47A | TO-247-3 Variant | Lead Free | 3 | No | 520W | 520W | 1 | T-MAX™ [B2] | 10.2nF | 14 ns | 16ns | 5 ns | 54 ns | 47A | 30V | 500V | N-Channel | 8900pF @ 25V | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 47A Tc | 470nC @ 10V | 22 mΩ |
