Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT5010B2VRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010b2vrg-datasheets-0908.pdf | 500V | 47A | TO-247-3 Variant | Lead Free | 3 | No | 520W | 520W | 1 | T-MAX™ [B2] | 10.2nF | 14 ns | 16ns | 5 ns | 54 ns | 47A | 30V | 500V | N-Channel | 8900pF @ 25V | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 47A Tc | 470nC @ 10V | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN48N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfn48n50q-datasheets-0909.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 100MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 500W | 1 | FET General Purpose Power | 22ns | 10 ns | 75 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 100m Ω @ 500mA, 10V | 4V @ 4mA | 48A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFB210N20P | IXYS | $34.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfb210n20p-datasheets-0910.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 264 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.5kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 210A | 20V | SILICON | DRAIN | SWITCHING | 1500W Tc | 600A | 0.0105Ohm | 4000 mJ | 200V | N-Channel | 18600pF @ 25V | 10.5m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT6013B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6013b2llg-datasheets-0911.pdf | 600V | 43A | TO-247-3 Variant | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 565W | 565W | 1 | T-MAX™ [B2] | 5.63nF | 11 ns | 14ns | 8 ns | 27 ns | 43A | 30V | 600V | N-Channel | 5630pF @ 25V | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 43A Tc | 130nC @ 10V | 130 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH44N25L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 28 Weeks | compliant | 250V | 400W Tc | N-Channel | 5740pF @ 25V | 75m Ω @ 22A, 10V | 4.5V @ 250μA | 44A Tc | 256nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK48N60Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60q3-datasheets-3687.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | 37 ns | 300ns | 40 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 120A | 0.14Ohm | 2000 mJ | 600V | N-Channel | 7020pF @ 25V | 140m Ω @ 24A, 10V | 6.5V @ 4mA | 48A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPZ60R099P6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipz60r099p6fksa1-datasheets-0893.pdf | TO-247-4 | Lead Free | 4 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | 37.9A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | 109A | 0.099Ohm | 796 mJ | N-Channel | 3330pF @ 100V | 99m Ω @ 14.5A, 10V | 4.5V @ 1.21mA | 37.9A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTH60N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixtt60n10-datasheets-4393.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 20ns | 18 ns | 70 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 80A | 0.02Ohm | 1500 mJ | 100V | N-Channel | 3200pF @ 25V | 20m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFB300N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfb300n10p-datasheets-0899.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.5kW | 1 | FET General Purpose Power | Not Qualified | 300A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1500W Tc | 900A | 0.0055Ohm | N-Channel | 23000pF @ 25V | 5.5m Ω @ 50A, 10V | 5V @ 8mA | 300A Tc | 279nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT8030LVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8030lvrg-datasheets-0900.pdf | 800V | 27A | TO-264-3, TO-264AA | Lead Free | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 520W | 520W | 1 | TO-264 [L] | 7.9nF | 16 ns | 14ns | 8 ns | 59 ns | 27A | 30V | 800V | N-Channel | 7900pF @ 25V | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 27A Tc | 510nC @ 10V | 500 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB170N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfb170n30p-datasheets-0901.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 1250W Tc | 500A | 0.018Ohm | 5000 mJ | N-Channel | 20000pF @ 25V | 18m Ω @ 85A, 10V | 4.5V @ 1mA | 170A Tc | 258nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFK20N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120p-datasheets-0816.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 70 ns | 72 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 780W Tc | 50A | 0.57Ohm | 1000 mJ | 1.2kV | N-Channel | 11100pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 193nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFL44N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n100p-datasheets-0904.pdf | ISOPLUS264™ | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 68ns | 54 ns | 90 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 357W Tc | 110A | 0.24Ohm | 2000 mJ | 1kV | N-Channel | 19000pF @ 25V | 240m Ω @ 22A, 10V | 6.5V @ 1mA | 22A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFN80N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n60p3-datasheets-0905.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | 48 ns | 87 ns | 66A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 960W Tc | 200A | 0.07Ohm | 2000 mJ | N-Channel | 13100pF @ 25V | 70m Ω @ 40A, 10V | 5V @ 8mA | 66A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFX50N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfx55n50-datasheets-8763.pdf | TO-247-3 | Lead Free | 3 | 6 Weeks | 100MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 520W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 520W Tc | 200A | 500V | N-Channel | 9400pF @ 25V | 100m Ω @ 25A, 10V | 4.5V @ 8mA | 50A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT34F100B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34f100l-datasheets-0872.pdf | 1kV | 34A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1 | 39 ns | 40ns | 38 ns | 150 ns | 35A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1135W Tc | TO-247AB | N-Channel | 9835pF @ 25V | 380m Ω @ 18A, 10V | 5V @ 2.5mA | 35A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFN32N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfn32n80p-datasheets-0882.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 625W | 1 | Not Qualified | 85 ns | 29A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 625W Tc | 250A | 0.27Ohm | 5000 mJ | 800V | N-Channel | 8820pF @ 25V | 270m Ω @ 16A, 10V | 5V @ 8mA | 29A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFT150N25X3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n25x3hv-datasheets-4378.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 250V | 780W Tc | N-Channel | 10400pF @ 25V | 9m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50M75B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m75lfllg-datasheets-0835.pdf | 500V | 57A | TO-247-3 Variant | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 570W | 570W | 1 | T-MAX™ [B2] | 5.59nF | 8 ns | 19ns | 3 ns | 21 ns | 57A | 30V | 500V | N-Channel | 5590pF @ 25V | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 57A Tc | 125nC @ 10V | 75 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA4N150HV | IXYS | $19.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtt4n150hv-datasheets-3671.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 4A | 1500V | 280W Tc | N-Channel | 1576pF @ 25V | 6 Ω @ 500mA, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX64N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfk64n50q3-datasheets-3727.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 36 ns | 250ns | 46 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 160A | 0.085Ohm | 4000 mJ | 500V | N-Channel | 6950pF @ 25V | 85m Ω @ 32A, 10V | 6.5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFN48N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfn48n60p-datasheets-0891.pdf | 600V | 48A | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 30 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 30 ns | 25ns | 22 ns | 85 ns | 40A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 110A | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 140m Ω @ 4A, 10V | 5.5V @ 8mA | 40A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| APT34F100L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34f100l-datasheets-0872.pdf | 1kV | 34A | TO-264-3, TO-264AA | Lead Free | 3 | 22 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1 | R-PSFM-T3 | 39 ns | 40ns | 38 ns | 150 ns | 35A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1135W Tc | 0.38Ohm | N-Channel | 9835pF @ 25V | 400m Ω @ 18A, 10V | 5V @ 2.5mA | 35A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT6015LVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6015lvfrg-datasheets-0873.pdf | 600V | 38A | TO-264-3, TO-264AA | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 403W | 520W | 1 | TO-264 [L] | 2.525nF | 15 ns | 13ns | 125 ns | 45 ns | 38A | 30V | 600V | N-Channel | 9000pF @ 25V | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 38A Tc | 475nC @ 10V | 780 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT1201R4BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1201r4bfllg-datasheets-0874.pdf | 1.2kV | 9A | TO-247-3 | Lead Free | 3 | 34 Weeks | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 300W | 1 | R-PSFM-T3 | 8 ns | 5ns | 11 ns | 27 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 300W Tc | TO-247AD | 9A | 36A | N-Channel | 2030pF @ 25V | 1.5 Ω @ 4.5A, 10V | 5V @ 1mA | 9A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT84M50L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt84m50b2-datasheets-0822.pdf | 500V | 84A | TO-264-3, TO-264AA | Lead Free | 3 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 60 ns | 70ns | 50 ns | 155 ns | 84A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1135W Tc | 270A | 0.065Ohm | N-Channel | 13500pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 84A Tc | 340nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTN36N50 | IXYS | $150.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | SOT-227-4, miniBLOC | Lead Free | 4 | 18 Weeks | No SVHC | 120mOhm | 3 | yes | EAR99 | 8541.29.00.95 | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 36A | 500V | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 400W Tc | 120MOhm | N-Channel | 5 V | 4V @ 20mA | 36A Tc | |||||||||||||||||||||||||||||||||||||||||
| APT20M22LVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 200V | 100A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 23 Weeks | 10.6g | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | R-PSFM-T3 | 16 ns | 25ns | 5 ns | 48 ns | 100A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 400A | 0.022Ohm | 2500 mJ | 200V | N-Channel | 10200pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 2.5mA | 100A Tc | 435nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT8043SFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8043bfllg-datasheets-0841.pdf | 800V | 20A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | No | 520W | 403W | 1 | 9 ns | 5ns | 5 ns | 25 ns | 20A | 30V | N-Channel | 2500pF @ 25V | 430m Ω @ 10A, 10V | 5V @ 1mA | 20A Tc | 85nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK24N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx24n90q-datasheets-0826.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 25 ns | 21ns | 12 ns | 60 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 96A | 0.45Ohm | 2500 mJ | 900V | N-Channel | 5900pF @ 25V | 450m Ω @ 500mA, 10V | 4.5V @ 4mA | 24A Tc | 170nC @ 10V | 10V | ±20V |
