Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFK80N65X2 | IXYS | $18.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n65x2-datasheets-1959.pdf | TO-264-3, TO-264AA | 19 Weeks | unknown | 80A | 650V | 890W Tc | N-Channel | 8245pF @ 25V | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 80A Tc | 143nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH10P50 | IXYS | $3.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixtt10p50-datasheets-0808.pdf | -500V | -10A | TO-247-3 | Lead Free | 3 | 750mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | Other Transistors | 27ns | 35 ns | 35 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | TO-247AD | 40A | -500V | P-Channel | 4700pF @ 25V | 900m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFE48N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n50q-datasheets-0847.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2.5 mJ | 500V | N-Channel | 7000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFK21N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk21n100q-datasheets-0857.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 6900pF @ 25V | 500m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFX21N100Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfk21n100q-datasheets-0857.pdf | TO-247-3 | Lead Free | 3 | 500mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 2500 mJ | 1kV | N-Channel | 6900pF @ 25V | 500m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFR27N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr27n80q-datasheets-0859.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 28ns | 13 ns | 50 ns | 27A | 20V | SILICON | ISOLATED | SWITCHING | 500W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFK40N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfx40n90p-datasheets-0804.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 50ns | 46 ns | 77 ns | 40A | SILICON | DRAIN | SWITCHING | 960W Tc | 80A | 0.21Ohm | 1500 mJ | 900V | N-Channel | 14000pF @ 25V | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 40A Tc | 230nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFX44N55Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx44n55q-datasheets-0861.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 10 ns | 75 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 2500 mJ | 550V | N-Channel | 6400pF @ 25V | 120m Ω @ 22A, 10V | 4.5V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK24N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx24n90q-datasheets-0826.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 25 ns | 21ns | 12 ns | 60 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 96A | 0.45Ohm | 2500 mJ | 900V | N-Channel | 5900pF @ 25V | 450m Ω @ 500mA, 10V | 4.5V @ 4mA | 24A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFR48N60Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr48n60q3-datasheets-0863.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 154Ohm | 247 | AVALANCHE RATED, UL RECOGNIZED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 37 ns | 300ns | 40 ns | 32A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 120A | 2000 mJ | 600V | N-Channel | 7020pF @ 25V | 154m Ω @ 24A, 10V | 6.5V @ 4mA | 32A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT10086BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10086bvfrg-datasheets-0865.pdf | 1kV | 13A | TO-247-3 | Lead Free | No | 520W | 370W | 1 | TO-247 [B] | 9nF | 12 ns | 10ns | 10 ns | 43 ns | 13A | 30V | 1000V | N-Channel | 4440pF @ 25V | 860mOhm @ 500mA, 10V | 4V @ 1mA | 13A Tc | 275nC @ 10V | 150 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SCTH100N65G2-7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-scth100n65g27ag-datasheets-0866.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 360W Tc | N-Channel | 3315pF @ 520V | 26m Ω @ 50A, 18V | 5V @ 5mA | 95A Tc | 162nC @ 18V | 18V | +22V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT94N65B2C6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt94n65b2c6-datasheets-0867.pdf | TO-247-3 Variant | Lead Free | 24 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 95A | 650V | 833W Tc | N-Channel | 8140pF @ 25V | 35m Ω @ 35.2A, 10V | 3.5V @ 3.5mA | 95A Tc | 320nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCTH50N120-7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30M36B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m36b2fllg-datasheets-0869.pdf | 300V | 84A | TO-247-3 Variant | Lead Free | 3 | No | 568W | 1 | T-MAX™ [B2] | 6.48nF | 15 ns | 31ns | 4 ns | 29 ns | 84A | 30V | 300V | N-Channel | 6480pF @ 25V | 36mOhm @ 42A, 10V | 5V @ 2.5mA | 84A Tc | 115nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n90p-datasheets-0702.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 960W Tc | 80A | 0.3Ohm | 2000 mJ | N-Channel | 10600pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 215nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| APT44F80L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt44f80l-datasheets-0854.pdf | 800V | 44A | TO-264-3, TO-264AA | Lead Free | 3 | 33 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 55 ns | 75ns | 70 ns | 230 ns | 47A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1135W Tc | 0.24Ohm | N-Channel | 9330pF @ 25V | 240m Ω @ 24A, 10V | 5V @ 2.5mA | 47A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT20M22LVRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt20m22lvrg-datasheets-0840.pdf | 200V | 100A | TO-264-3, TO-264AA | Lead Free | 3 | 31 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | R-PSFM-T3 | 16 ns | 25ns | 5 ns | 48 ns | 100A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 400A | 0.022Ohm | 2500 mJ | N-Channel | 10200pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 2.5mA | 100A Tc | 435nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APT8043BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8043bfllg-datasheets-0841.pdf | 800V | 20A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 403W | 403W | 1 | 9 ns | 5ns | 5 ns | 25 ns | 20A | 30V | N-Channel | 2500pF @ 25V | 430m Ω @ 10A, 10V | 5V @ 1mA | 20A Tc | 85nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M18B2VRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m18lvrg-datasheets-0838.pdf | 200V | 100A | TO-247-3 Variant | Lead Free | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 625W | 1 | T-MAX™ [B2] | 9.88nF | 18 ns | 27ns | 6 ns | 55 ns | 100A | 30V | 200V | N-Channel | 9880pF @ 25V | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 100A Tc | 330nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXKT70N60C5-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | 600V | N-Channel | 68A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCTW100N65G2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~200°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sctw100n65g2ag-datasheets-0843.pdf | TO-247-3 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 650V | 420W Tc | N-Channel | 3315pF @ 520V | 26m Ω @ 50A, 18V | 5V @ 5mA | 100A Tc | 162nC @ 18V | 18V | +22V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK36N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | /files/ixys-ixfk32n60-datasheets-0809.pdf | 600V | 36A | TO-264-3, TO-264AA | Contains Lead | 3 | 6 Weeks | 10mg | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 45ns | 60 ns | 100 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 500W Tc | 144A | 0.18Ohm | 600V | N-Channel | 9000pF @ 25V | 180m Ω @ 500mA, 10V | 4.5V @ 8mA | 36A Tc | 325nC @ 25V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFR20N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfr20n120p-datasheets-0846.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 290W | 1 | FET General Purpose Power | Not Qualified | 45ns | 70 ns | 72 ns | 13A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 290W Tc | 50A | 1000 mJ | 1.2kV | N-Channel | 11100pF @ 25V | 630m Ω @ 10A, 10V | 6.5V @ 1mA | 13A Tc | 193nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFE44N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n50q-datasheets-0847.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2.5 mJ | 500V | N-Channel | 7000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFR21N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr21n100q-datasheets-0848.pdf | ISOPLUS247™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 350W Tc | 19A | 84A | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 5900pF @ 25V | 500m Ω @ 10.5A, 10V | 5V @ 4mA | 18A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFL60N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfl60n80p-datasheets-3500.pdf | ISOPLUS264™ | Lead Free | 3 | 26 Weeks | 150MOhm | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 29ns | 26 ns | 110 ns | 40A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 150A | 5000 mJ | 800V | N-Channel | 18000pF @ 25V | 150m Ω @ 30A, 10V | 5V @ 8mA | 40A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFR24N100Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n100q3-datasheets-0849.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 500W Tc | 60A | 0.49Ohm | 2000 mJ | 1kV | N-Channel | 7200pF @ 25V | 490m Ω @ 12A, 10V | 6.5V @ 4mA | 18A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTT4N150HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 1500V | 280W Tc | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60N60SCSG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 25 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE ENERGY RATED | Pure Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | 30 | 431W | 1 | Not Qualified | R-PSSO-G2 | 60A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 431W Tc | 0.045Ohm | N-Channel | 7200pF @ 25V | 45m Ω @ 44A, 10V | 3.9V @ 3mA | 60A Tc | 190nC @ 10V | Super Junction | 10V | ±30V |
