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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFR24N100Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n100q3-datasheets-0849.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 500W Tc | 60A | 0.49Ohm | 2000 mJ | 1kV | N-Channel | 7200pF @ 25V | 490m Ω @ 12A, 10V | 6.5V @ 4mA | 18A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| APT50M75LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m75lfllg-datasheets-0835.pdf | 500V | 57A | TO-264-3, TO-264AA | Lead Free | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 1.135kW | 570W | 1 | TO-264 [L] | 13.5nF | 8 ns | 19ns | 3 ns | 21 ns | 57A | 30V | 500V | N-Channel | 5590pF @ 25V | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 57A Tc | 125nC @ 10V | 65 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| IXTK90N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixtk90n15-datasheets-0836.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 390W | 1 | FET General Purpose Power | Not Qualified | 30ns | 17 ns | 115 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 0.016Ohm | 1500 mJ | 150V | N-Channel | 6400pF @ 25V | 16m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT66F60L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt66f60b2-datasheets-3709.pdf | TO-264-3, TO-264AA | 3 | 22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 75 ns | 85ns | 70 ns | 225 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 1135W Tc | 66A | 245A | N-Channel | 13190pF @ 25V | 90m Ω @ 33A, 10V | 5V @ 2.5mA | 70A Tc | 330nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT20M18LVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m18lvrg-datasheets-0838.pdf | 200V | 100A | TO-264-3, TO-264AA | Lead Free | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 625W | 1 | TO-264 [L] | 9.88nF | 18 ns | 27ns | 6 ns | 55 ns | 100A | 30V | 200V | N-Channel | 9880pF @ 25V | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 100A Tc | 330nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFK100N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfk150n10-datasheets-0800.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 12MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 500W | 1 | FET General Purpose Power | 60ns | 60 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 560A | 100V | N-Channel | 9000pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 8mA | 100A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APT84M50B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt84m50b2-datasheets-0822.pdf | 500V | 84A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | 60 ns | 70ns | 50 ns | 155 ns | 84A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1135W Tc | 270A | 0.065Ohm | N-Channel | 13500pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 84A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FMD47-06KC5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd4706kc5-datasheets-0824.pdf | ISOPLUSi5-Pak™ | 5 | 32 Weeks | 5 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFT7N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n90q-datasheets-4153.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 13 ns | 42 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 7A | 28A | 700 mJ | 900V | N-Channel | 2200pF @ 25V | 1.5 Ω @ 500mA, 10V | 5V @ 2.5mA | 7A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFX24N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx24n90q-datasheets-0826.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 21ns | 12 ns | 60 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 96A | 0.45Ohm | 2500 mJ | 900V | N-Channel | 5900pF @ 25V | 450m Ω @ 500mA, 10V | 4.5V @ 4mA | 24A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFR48N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n50q-datasheets-0735.pdf | ISOPLUS247™ | Lead Free | 3 | 110MOhm | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 22ns | 10 ns | 75 ns | 40A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 192A | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 40A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| APT24M120L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt24m120b2-datasheets-3646.pdf | 1.2kV | 24A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 21 Weeks | 10.6g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | R-PSFM-T3 | 45 ns | 27ns | 42 ns | 145 ns | 24A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1040W Tc | 90A | 0.63Ohm | N-Channel | 8370pF @ 25V | 680m Ω @ 12A, 10V | 5V @ 2.5mA | 24A Tc | 260nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| APT50M75B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 500V | 57A | TO-247-3 Variant | Lead Free | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 570W | 1 | T-MAX™ [B2] | 5.59nF | 8 ns | 19ns | 3 ns | 21 ns | 57A | 30V | 500V | 570W Tc | N-Channel | 5590pF @ 25V | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 57A Tc | 125nC @ 10V | 75 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT5010LVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010lvfrg-datasheets-0831.pdf | 500V | 47A | TO-264-3, TO-264AA | Lead Free | 12 Weeks | No | 520W | 520W | 1 | TO-264 [L] | 10.2nF | 14 ns | 16ns | 5 ns | 54 ns | 47A | 30V | 500V | N-Channel | 8900pF @ 25V | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 47A Tc | 470nC @ 10V | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| APT48M80B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt48m80b2-datasheets-0832.pdf | 800V | 48A | TO-247-3 Variant | Lead Free | 3 | 29 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 55 ns | 75ns | 70 ns | 230 ns | 49A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1135W Tc | TO-247AB | 0.2Ohm | N-Channel | 9330pF @ 25V | 190m Ω @ 24A, 10V | 5V @ 2.5mA | 49A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APT6021SFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6021bfllg-datasheets-0799.pdf | 600V | 29A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 400W | 1 | D3 [S] | 3.47nF | 10 ns | 7ns | 4 ns | 25 ns | 29A | 30V | 600V | N-Channel | 3470pF @ 25V | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 29A Tc | 80nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTT140N075L2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | compliant | 75V | 540W Tc | N-Channel | 9300pF @ 25V | 11m Ω @ 70A, 10V | 4.5V @ 250μA | 140A Tc | 275nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX20N120P | IXYS | $151.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120p-datasheets-0816.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 247 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 45ns | 70 ns | 72 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 6.5V | 780W Tc | 50A | 0.57Ohm | 1000 mJ | 1.2kV | N-Channel | 11100pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 193nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| APT50M75LLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | 500V | 57A | TO-264-3, TO-264AA | Lead Free | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 570W | 570W | 1 | TO-264 [L] | 5.59nF | 8 ns | 19ns | 3 ns | 21 ns | 57A | 30V | 500V | N-Channel | 5590pF @ 25V | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 57A Tc | 125nC @ 10V | 75 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| APT66M60B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt66m60l-datasheets-0813.pdf | 600V | 66A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 18 Weeks | 90mOhm | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Pure Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 75 ns | 85ns | 70 ns | 225 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1135W Tc | 245A | 600V | N-Channel | 13190pF @ 25V | 100m Ω @ 33A, 10V | 5V @ 2.5mA | 70A Tc | 330nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFB120N50P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb120n50p2-datasheets-3471.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 264 | AVALANCHE RATED | 3 | Single | 1.89kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 120A | 30V | SILICON | DRAIN | SWITCHING | 1890W Tc | 300A | 0.043Ohm | 4000 mJ | 500V | N-Channel | 19000pF @ 25V | 43m Ω @ 500mA, 10V | 5V @ 8mA | 120A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTR140P10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr140p10t-datasheets-0821.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 270W Tc | 90A | 400A | 0.013Ohm | 2000 mJ | P-Channel | 31400pF @ 25V | 13m Ω @ 70A, 10V | 4V @ 250μA | 110A Tc | 400nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| APT5010LVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010lvrg-datasheets-0807.pdf | 500V | 47A | TO-264-3, TO-264AA | Lead Free | 5 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 520W | 1 | TO-264 [L] | 8.9nF | 14 ns | 16ns | 5 ns | 54 ns | 47A | 30V | 500V | N-Channel | 8900pF @ 25V | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 47A Tc | 470nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTT10P50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixtt10p50-datasheets-0808.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 40A | 0.9Ohm | -500V | P-Channel | 4700pF @ 25V | 900m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK32N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n60-datasheets-0809.pdf | TO-264-3, TO-264AA | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 60 ns | 100 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 128A | 0.15Ohm | 600V | N-Channel | 9000pF @ 25V | 250m Ω @ 500mA, 10V | 4.5V @ 8mA | 32A Tc | 325nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APT20M20B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m20b2fllg-datasheets-0810.pdf | 200V | 100A | TO-247-3 Variant | Lead Free | 3 | No | 568W | 1 | T-MAX™ [B2] | 6.85nF | 13 ns | 40ns | 2 ns | 26 ns | 100A | 30V | 200V | N-Channel | 6850pF @ 25V | 20mOhm @ 50A, 10V | 5V @ 2.5mA | 100A Tc | 110nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT56F60L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | TO-264-3, TO-264AA | 3 | 23 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | FET General Purpose Power | R-PSFM-T3 | 65 ns | 75ns | 60 ns | 190 ns | 60A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 1040W Tc | 56A | N-Channel | 11300pF @ 25V | 110m Ω @ 28A, 10V | 5V @ 2.5mA | 60A Tc | 280nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT1201R6BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1201r6bvfrg-datasheets-0812.pdf | 1.2kV | 8A | TO-247-3 | Lead Free | 25 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | 280W | 1 | TO-247 [B] | 3.66nF | 12 ns | 10ns | 15 ns | 50 ns | 8A | 30V | 1200V | N-Channel | 3660pF @ 25V | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 8A Tc | 230nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT66M60L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt66m60l-datasheets-0813.pdf | 600V | 66A | TO-264-3, TO-264AA | Lead Free | 3 | 21 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 75 ns | 85ns | 70 ns | 225 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1135W Tc | 245A | 0.09Ohm | N-Channel | 13190pF @ 25V | 190m Ω @ 33A, 10V | 5V @ 2.5mA | 70A Tc | 330nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APT6015LVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6015lvrg-datasheets-0814.pdf | 600V | 38A | TO-264-3, TO-264AA | Lead Free | 13 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 520W | 1 | TO-264 [L] | 9nF | 15 ns | 13ns | 5 ns | 45 ns | 38A | 30V | 600V | N-Channel | 9000pF @ 25V | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 38A Tc | 475nC @ 10V |
