Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD19501KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 16 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19501 | 1 | Single | NOT SPECIFIED | 1 | 21 ns | 15ns | 5 ns | 39 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.6V | 217W Tc | 0.0079Ohm | 80V | N-Channel | 3980pF @ 40V | 6.6m Ω @ 60A, 10V | 3.2V @ 250μA | 100A Ta | 50nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STFH18N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfh18n60m2-datasheets-3836.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | NO | SINGLE | STFH18N | 1 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 3V | 25W Tc | TO-220AB | 52A | 0.28Ohm | N-Channel | 791pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 21.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF12N60L | Alpha & Omega Semiconductor Inc. | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | NO | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 600V | 50W Tc | 12A | N-Channel | 2100pF @ 25V | 550m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 500V | 3.1W Ta 74W Tc | 1.4Ohm | N-Channel | 620pF @ 25V | 4.5 V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TK72E08N1,S1X | Toshiba Semiconductor and Storage | $3.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 72A | 80V | 192W Tc | N-Channel | 5500pF @ 40V | 4.3m Ω @ 36A, 10V | 4V @ 1mA | 72A Ta | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18503KCS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18503kcs-datasheets-0128.pdf | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | CSD18503 | Single | 143W | 1 | FET General Purpose Power | 5.7 ns | 5.3ns | 6.8 ns | 14 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 188W Tc | 0.0068Ohm | 40V | N-Channel | 3150pF @ 20V | 4.5m Ω @ 75A, 10V | 2.3V @ 250μA | 100A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFB3307ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb3307zpbf-datasheets-3788.pdf | 75V | 120A | TO-220-3 | 10.66mm | 9.02mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 5.8MOhm | 3 | EAR99 | Tin | No | Single | 230mW | 1 | FET General Purpose Power | 15 ns | 64ns | 65 ns | 38 ns | 120A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | TO-220AB | 33 ns | 480A | 75V | N-Channel | 4750pF @ 50V | 4 V | 5.8m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPP07N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa07n60c3xksa1-datasheets-3567.pdf | 650V | 7.3A | TO-220-3 | Lead Free | 3 | Halogen Free | 83W | PG-TO220-3-1 | 790pF | 6 ns | 3.5ns | 7 ns | 60 ns | 7.3A | 20V | 600V | 650V | 83W Tc | 600mOhm | 650V | N-Channel | 790pF @ 25V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI830GPBF | Vishay Siliconix | $4.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi830gpbf-datasheets-3802.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 11 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 610pF | 2.5kV | 8.2 ns | 16ns | 16 ns | 42 ns | 3.1A | 20V | 500V | 4V | 35W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP8NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std8nm50n-datasheets-2752.pdf | TO-220-3 | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 790mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | STP8N | 3 | 45W | 1 | FET General Purpose Power | 7 ns | 4.4ns | 8.8 ns | 25 ns | 5A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3V | 45W Tc | TO-220AB | 5A | 20A | 500V | N-Channel | 364pF @ 50V | 790m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IRFIZ34GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfiz34gpbf-datasheets-3812.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 42W | 1 | 13 ns | 100ns | 52 ns | 29 ns | 20A | 20V | SILICON | SWITCHING | 60V | 60V | 4V | 42W Tc | TO-220AB | 80A | N-Channel | 1200pF @ 25V | 4 V | 50m Ω @ 12A, 10V | 4V @ 250μA | 20A Tc | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTP70N075T2 | IXYS | $2.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp70n075t2-datasheets-3818.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 28ns | 22 ns | 31 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 180A | 0.012Ohm | 300 mJ | 75V | N-Channel | 2725pF @ 25V | 12m Ω @ 25A, 10V | 4V @ 250μA | 70A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK10A60W5,S5VX | Toshiba Semiconductor and Storage | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 720pF | 9.7A | 600V | 30W Tc | N-Channel | 720pF @ 300V | 450mOhm @ 4.9A, 10V | 4.5V @ 500μA | 9.7A Ta | 25nC @ 10V | 450 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP057N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp057n08n3gxksa1-datasheets-3823.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 150W | 1 | Not Qualified | 18 ns | 66ns | 10 ns | 38 ns | 80A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | TO-220AB | 0.0057Ohm | N-Channel | 4750pF @ 40V | 5.7m Ω @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 69nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA90R800C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa90r800c3xksa1-datasheets-3829.pdf | TO-220-3 Full Pack | 3 | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 33W Tc | TO-220AB | 6.9A | 15A | 0.8Ohm | 157 mJ | N-Channel | 1100pF @ 100V | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730SPBF | Vishay Siliconix | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730spbf-datasheets-3742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 700pF | 10 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | 400V | 3.1W Ta 74W Tc | 1Ohm | 400V | N-Channel | 700pF @ 25V | 4 V | 1Ohm @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQP46N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp46n15-datasheets-3746.pdf | 150V | 45.6A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 4.535924g | No SVHC | 42mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 45A | e3 | Tin (Sn) | 150V | Single | 210W | 1 | FET General Purpose Power | 35 ns | 320ns | 200 ns | 210 ns | 45.6A | 25V | SILICON | SWITCHING | 4V | 210W Tc | TO-220AB | 650 mJ | 150V | N-Channel | 3250pF @ 25V | 42m Ω @ 22.8A, 10V | 4V @ 250μA | 45.6A Tc | 110nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| FQA9P25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa9p25-datasheets-3755.pdf | -250V | -10.5A | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | 620MOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1 | Single | 150W | 1 | Other Transistors | 20 ns | 150ns | 65 ns | 45 ns | 10.5A | 30V | SILICON | SWITCHING | 250V | 150W Tc | 42A | 650 mJ | -250V | P-Channel | 1180pF @ 25V | 620m Ω @ 5.25A, 10V | 5V @ 250μA | 10.5A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FDPF16N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdpf16n50t-datasheets-3406.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 38.5W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 150ns | 80 ns | 65 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 38.5W Tc | TO-220AB | 64A | 780 mJ | 500V | N-Channel | 1945pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRL630PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irl630pbf-datasheets-3769.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 2V | 74W Tc | 350 ns | 400mOhm | 200V | N-Channel | 1100pF @ 25V | 2 V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| SIHP15N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sihp15n50ege3-datasheets-3682.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 14.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 156W Tc | TO-220AB | 28A | 0.28Ohm | 500V | N-Channel | 1162pF @ 100V | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 14.5A Tc | 66nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF11S65L | Alpha & Omega Semiconductor Inc. | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | TO-220-3F | 646pF | 11A | 650V | 31W Tc | N-Channel | 646pF @ 100V | 399mOhm @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 13.2nC @ 10V | 399 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8010PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf8010pbf-datasheets-3693.pdf | 100V | 80A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 15Ohm | 3 | EAR99 | Tin | No | Single | 260W | 1 | FET General Purpose Power | 15 ns | 130ns | 120 ns | 61 ns | 80A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 260W Tc | TO-220AB | 150 ns | 75A | 100V | N-Channel | 3830pF @ 25V | 4 V | 15m Ω @ 45A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| HUF75339P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75339p3-datasheets-3703.pdf | 55V | 75A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 12mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 60ns | 25 ns | 20 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 55V | N-Channel | 2000pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 130nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF6N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp6n90c-datasheets-3531.pdf | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 2.3Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | Single | 56W | 1 | FET General Purpose Power | 35 ns | 90ns | 60 ns | 55 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 56W Tc | TO-220AB | 630 ns | 6A | 24A | 650 mJ | 900V | N-Channel | 1770pF @ 25V | 2.3 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STF80N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std80n10f7-datasheets-9835.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 13 Weeks | 2.240009g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | STF80N | 1 | Single | 1 | 15 ns | 13.5ns | 21 ns | 75 ns | 40A | 25V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 100V | N-Channel | 3100pF @ 50V | 10m Ω @ 40A, 10V | 4.5V @ 250μA | 40A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK11A65W,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 890pF | 45 ns | 23ns | 5.5 ns | 85 ns | 11.1A | 30V | 650V | 35W Tc | 330mOhm | 650V | N-Channel | 890pF @ 300V | 390mOhm @ 5.5A, 10V | 3.5V @ 450μA | 11.1A Ta | 25nC @ 10V | 390 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF11N50CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf11n50cf-datasheets-3731.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 48W | 1 | FET General Purpose Power | Not Qualified | 24 ns | 70ns | 75 ns | 120 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 48W Tc | TO-220AB | 44A | 0.55Ohm | 670 mJ | 500V | N-Channel | 2055pF @ 25V | 550m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 55nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPA60R280CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r280cfd7xksa1-datasheets-3737.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 24W Tc | TO-220AB | 6A | 31A | 0.28Ohm | 36 mJ | N-Channel | 807pF @ 400V | 280m Ω @ 3.6A, 10V | 4.5V @ 180μA | 6A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STI18N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp18n65m2-datasheets-2139.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | STI18N | Single | I2PAK | 770pF | 11 ns | 46 ns | 12A | 25V | 650V | 110W Tc | 330mOhm | N-Channel | 770pF @ 100V | 330mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 20nC @ 10V | 330 mΩ | 10V | ±25V |
